BUZ 255 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 31 °C Values Unit A 13 IDpuls Pulsed drain current TC = 25 °C 52 Avalanche current,limited by Tjmax IAR 13 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 9 mJ EAS ID = 13 A, VDD = 50 V, RGS = 25 Ω L = 1.89 mH, Tj = 25 °C 200 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 95 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.32 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 250 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 250 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 250 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 8.5 A Semiconductor Group nA - 2 0.22 0.24 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance 5 pF - 970 1300 - 165 250 - 85 130 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 9.4 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 15 25 - 60 90 - 160 250 - 60 80 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 52 V 1.3 1.6 trr ns - 200 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 13 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 26 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 1.7 - 07/96 BUZ 255 Not for new design Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 14 100 A W 12 Ptot ID 80 11 10 70 9 60 8 7 50 6 40 5 30 4 3 20 2 10 1 0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 t = 16.0µs p K/W /I D A DS ID =V DS (o n) 10 1 ZthJC 100 µs 10 0 R 1 ms 10 -1 D = 0.50 10 ms 10 0.20 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 10 0 10 1 10 10 2 V 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 255 Not for new design Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 30 Ptot = 95W 0.75 l A kj i h Ω g 26 ID a 4.0 RDS (on)0.60 b 4.5 0.55 c 5.0 d 5.5 e 6.0 0.45 f 6.5 0.40 g 7.0 d h 7.5 f 22 20 e 18 16 14 12 c 8 6 d e 0.50 f 8.0 0.30 h j 9.0 0.25 j k 10.0 l 20.0 g i k 0.20 0.15 b 0.10 VGS [V] = 4 2 0 0 c 0.35 i 10 b 0.65 VGS [V] 24 a a 2 4 6 8 10 12 14 V 0.05 0.00 0 17 a 4.0 4.5 b 5.0 c 5.5 4 d 6.0 e f 6.5 7.0 8 12 g 7.5 h i j k 8.0 9.0 10.0 20.0 16 20 VDS A 26 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 32 14 S A ID 12 gfs 24 11 10 9 20 8 16 7 6 12 5 4 8 3 2 4 0 0 1 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0 4 8 12 16 20 24 A ID 07/96 30 BUZ 255 Not for new design Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8.5 A, VGS = 10 V 1.0 4.6 V Ω 98% 4.0 VGS(th) RDS (on) 0.8 3.6 0.7 3.2 0.6 2.8 typ 2.4 0.5 2% 2.0 0.4 98% typ 1.6 0.3 1.2 0.2 0.8 0.1 0.4 0.0 -60 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss Coss 10 -1 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 255 Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 13 A, VDD = 50 V RGS = 25 Ω, L = 1.89 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A 16 220 mJ V EAS 180 VGS 160 140 12 10 0,2 VDS max 0,8 VDS max 120 8 100 6 80 60 4 40 2 20 0 20 0 40 60 80 100 120 °C 160 Tj 0 20 40 60 80 100 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 140 BUZ 255 Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96