BUZ 341 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 °C Values Unit A 33 IDpuls Pulsed drain current TC = 25 °C 132 Avalanche current,limited by Tjmax IAR 33 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 16 mJ EAS ID = 33 A, VDD = 50 V, RGS = 25 Ω L = 1.09 mH, Tj = 25 °C 790 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 170 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.74 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 341 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 21 A Semiconductor Group nA - 2 0.06 0.07 07/96 BUZ 341 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 21 A Input capacitance 15 pF - 2600 3900 - 500 750 - 230 350 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 23 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 40 60 - 110 170 - 450 680 - 160 240 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 341 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 132 V 1.3 1.6 trr ns - 230 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 33 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 66 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 1.8 - 07/96 BUZ 341 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 34 180 A W Ptot ID 140 28 24 120 20 100 16 80 12 60 8 40 4 20 0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 0 A ID 10 2 /ID = R 10 K/W t = 350.0ns p 1 µs VD ZthJC 10 µs S 10 -1 100 µs n) (o DS 1 ms 1 10 ms D = 0.50 0.20 10 -2 0.10 0.05 10 0 DC 0.02 single pulse 0.01 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 341 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 75 0.22 Ptot = 170W l A kj i h 65 ID a Ω g VGS [V] 60 f a 4.0 55 b 4.5 b c d 0.18 RDS (on) 0.16 c 5.0 50 d 5.5 e 45 0.14 e 6.0 f 40 0.12 6.5 g 7.0 35 d h 7.5 30 i 8.0 25 j 9.0 20 e 0.08 g f i k 10.0 c 0.10 0.06 l 20.0 15 j 0.04 10 VGS [V] = b 5 0 0 0.02 a 2 4 6 8 V 0.00 0 11 a 4.0 4.5 5.0 b 5.5 10 c 6.0 d 6.5 20 e f 7.0 7.5 30 g 8.0 h i j 9.0 10.0 20.0 40 50 VDS A 65 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max ID h 65 30 A S 55 26 gfs 50 24 22 45 20 40 18 35 16 30 14 25 12 10 20 8 15 6 10 4 5 0 0 2 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0 10 20 30 40 A ID 07/96 60 BUZ 341 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 21 A, VGS = 10 V 0.26 4.6 Ω V 98% 4.0 0.22 VGS(th) RDS (on) 0.20 3.6 0.18 3.2 0.16 2.8 0.14 2.4 0.12 typ 2% 2.0 98% typ 0.10 1.6 0.08 1.2 0.06 0.8 0.04 0.4 0.02 0.00 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 nF A Ciss C IF 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 341 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 33 A, VDD = 50 V RGS = 25 Ω, L = 1.09 mH EAS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 50 A 800 16 mJ V VGS 600 12 500 10 400 8 300 6 200 4 100 2 0 20 0,2 VDS max 0,8 VDS max 0 40 60 80 100 120 °C 160 Tj 0 20 40 60 80 100 120 140 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 180 BUZ 341 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96