isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ41A DESCRIPTION •4.5A, 500V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device APPLICATIONS ·This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 4.5 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT 1.67 ℃/W 75 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ41A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 2.5A 1.5 Ω Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 9A; VGS= 0 1.5 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn