BUZ 71 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 71 AL 50 V 13 A 0.12 Ω TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C Values Unit A 13 IDpuls Pulsed drain current TC = 25 °C 52 Avalanche current,limited by Tjmax IAR 14 Avalanche energy,periodic limited by Tjmax EAR 1 Avalanche energy, single pulse EAS mJ ID = 14 A, VDD = 25 V, RGS = 25 Ω L = 30.6 µH, Tj = 25 °C 6 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TC = 25 °C W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 °C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 71 AL Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 50 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS µA VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 7 A Semiconductor Group nA - 2 0.09 0.12 07/96 BUZ 71 AL Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 7 A Input capacitance 5 pF - 510 680 - 210 320 - 85 130 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 9.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 15 25 - 70 100 - 70 90 - 50 70 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 71 AL Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 52 V 1.3 1.8 trr ns - 120 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 13 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 28 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.15 - 07/96 BUZ 71 AL Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 45 14 A W 12 Ptot ID 35 11 10 30 9 8 25 7 20 6 5 15 4 10 3 2 5 1 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 TC °C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 t = 30.0µs p K/W /ID A ID = 10 1 VD 100 µs S ZthJC ) on S( D R 10 0 1 ms 10 ms 10 -1 D = 0.50 0.20 10 0 0.10 DC 0.05 10 -2 0.02 0.01 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 71 AL Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 30 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.38 Ptot = 40W A l k ji h g Ω f a 2.5 0.32 RDS (on) b 3.0 0.28 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 VGS [V] ID 24 e 22 20 18 d 16 14 12 c 10 8 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 c d 0.20 0.16 0.12 e g fh i j k 0.08 4 0.04 a 2 0 b 0.24 b 6 a VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0 0.00 0.0 1.0 2.0 3.0 4.0 V 6.0 0 4 8 12 16 20 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 50 16 A ID 26 ID S 40 gfs 12 35 10 30 25 8 20 6 15 4 10 2 5 0 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0 5 10 15 20 25 A ID 07/96 35 BUZ 71 AL Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 7 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.38 4.6 Ω V 0.32 4.0 RDS (on) VGS(th) 3.6 0.28 3.2 0.24 2.8 0.20 2.4 98% 98% 0.16 2.0 typ 1.6 typ 0.12 2% 1.2 0.08 0.8 0.04 0.4 0.00 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A C IF 10 3 10 1 Ciss Coss 10 2 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 71 AL Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 14 A, VDD = 25 V RGS = 25 Ω, L = 30.6 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 6.5 16 mJ V 5.5 EAS VGS 5.0 12 4.5 10 4.0 3.5 0,2 VDS max 8 0,8 VDS max 3.0 2.5 6 2.0 4 1.5 1.0 2 0.5 0.0 20 0 40 60 80 100 120 °C 160 Tj 0 4 8 12 16 20 24 28 nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 71 AL Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96