BUZ 73 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 73 200 V 7A 0.4 Ω TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 °C Values Unit A 7 IDpuls Pulsed drain current TC = 25 °C 28 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 6.5 mJ EAS ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 °C 120 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 73 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 4.5 A Semiconductor Group nA - 2 0.3 0.4 07/96 BUZ 73 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A Input capacitance 3 pF - 400 530 - 85 130 - 45 70 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.2 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 10 15 - 40 60 - 55 75 - 30 40 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 73 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 28 V 1.3 1.7 trr ns - 200 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 7 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 14 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.6 - 07/96 BUZ 73 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 7.5 45 A W Ptot 6.5 ID 35 6.0 5.5 5.0 30 4.5 25 4.0 3.5 20 3.0 2.5 15 2.0 10 1.5 1.0 5 0.5 0.0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 K/W t = 22.0µs p A ZthJC 10 0 /I D ID R DS (o n) =V DS 10 1 100 µs 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 10 0 10 1 10 2 10 -3 -7 10 V VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 73 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 16 1.3 Ptot = 40W l kj i h Ω g A f a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 12 10 e 8 d h 6 c RDS (on) 8.0 j 9.0 l e 1.0 0.7 0.6 0.5 f 0.4 20.0 h j k 0.3 b 0.2 2 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 V 11 0 2 4 6 8 10 VDS A 14 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 13 6.0 A S 11 ID g i VGS [V] = 0.1 a 0 0 d 0.8 k 10.0 4 c 0.9 7.5 i b 1.1 VGS [V] ID a 5.0 gfs 10 9 4.5 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 2 1.0 1 0.5 0 0 0.0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 2 4 6 8 A ID 07/96 12 BUZ 73 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 4.5 A, VGS = 10 V 1.9 4.6 Ω V 98% 4.0 1.6 VGS(th) RDS (on) 3.6 1.4 typ 3.2 1.2 2.8 1.0 2.4 2% 2.0 0.8 98% 1.6 typ 1.2 0.6 0.4 0.8 0.2 0.4 0.0 -60 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Tj = 25 °C typ Coss Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 73 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 130 16 mJ V 110 EAS VGS 100 12 90 10 80 0,2 VDS max 0,8 VDS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 °C 160 Tj 0 4 8 12 16 20 24 28 32 nC 38 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 73 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96