BUZ 80 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 80 800 V 3.1 A 4Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 °C Values Unit A 3.1 IDpuls Pulsed drain current TC = 25 °C 12.5 Avalanche current,limited by Tjmax IAR 3.1 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 8 mJ EAS ID = 3.1 A, VDD = 50 V, RGS = 25 Ω L = 62.4 mH, Tj = 25 °C 320 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 100 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.25 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 800 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 800 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 800 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 2 A Semiconductor Group nA - 2 3.5 4 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 2 A Input capacitance 1 pF - 900 1350 - 95 140 - 50 75 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 3.6 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 15 25 - 65 85 - 200 270 - 65 85 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 12.5 V 1 1.3 trr ns - 370 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 3.1 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 6.2 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 2.5 - 09/96 BUZ 80 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 3.2 110 W Ptot A 90 ID 2.4 80 2.0 70 60 1.6 50 1.2 40 30 0.8 20 0.4 10 0.0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 K/W A ID ZthJC 10 0 t = 18.0µs p 10 1 10 -1 100 µs D = 0.50 0.10 0.05 10 ms 10 -3 R 10 -1 0 10 0.20 =V 0 DS (on ) 10 10 -2 DS /I D 1 ms 10 1 10 2 DC 3 V 10 10 -4 -7 10 VDS Semiconductor Group 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 09/96 0 BUZ 80 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 7.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 13 Ptot = 100W A l kj i h Ω g 6.0 ID 5.0 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 d h 7.5 e 4.5 4.0 3.5 3.0 2.5 c 2.0 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) c d e 10 9 8 7 6 f 5 g h i j k 4 3 1.5 b 2 1.0 VGS [V] = 1 a 0.5 0.0 b 11 [V] V f GS 5.5 a a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0 0 10 20 30 40 V 60 0.0 1.0 2.0 3.0 4.0 5.0 VDS A 6.5 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 5.0 3.0 A ID S 4.0 gfs 3.5 2.0 3.0 2.5 1.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 09/96 4.0 BUZ 80 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 2 A, VGS = 10 V 19 4.6 Ω V 98% 4.0 16 VGS(th) RDS (on) 3.6 14 typ 3.2 12 2.8 10 2.4 2% 2.0 8 1.6 98% typ 6 1.2 4 0.8 2 0.4 0 0.0 -60 -20 20 60 100 °C -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A C IF Ciss 10 0 10 1 10 -1 10 0 Coss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Crss 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS Tj = 150 °C (98%) 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 09/96 3.0 BUZ 80 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 3.1 A, VDD = 50 V RGS = 25 Ω, L = 62.4 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 5 A 340 16 mJ V EAS 280 VGS 12 240 10 0,2 VDS max 200 8 160 6 120 80 4 40 2 0 20 0,8 VDS max 0 40 60 80 100 120 °C 160 Tj 0 10 20 30 40 50 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 960 V 920 V(BR)DSS 900 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 09/96 70 BUZ 80 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 09/96