BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • BV Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX −50 V 10 W @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc ID Drain Current Continuous @ TA = 25°C Pulsed Drain Current (tp ≤ 10 ms) IDM 130 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C RqJA 556 °C/W TL 260 °C Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds P−Channel 3 mA 1 2 3 SOT−23 CASE 318 STYLE 21 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain PD MG G 1 Gate PD M G 2 Source = Specific Device Code = Date Code = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BSS84LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BVSS84LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 October, 2016 − Rev. 9 1 Publication Order Number: BSS84LT1/D BSS84L, BVSS84L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS −50 − − Vdc − − − − − − −0.1 −15 −60 − ±10 nAdc Vdc OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) mAdc Zero Gate Voltage Drain Current (VDS = −25 Vdc, VGS = 0 Vdc) (VDS = −50 Vdc, VGS = 0 Vdc) (VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA) VGS(th) −0.9 − −2.0 Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc) RDS(on) − 4.7 10 W |yfs| 50 − − mS pF ON CHARACTERISTICS (Note 1) Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance VDS = 5.0 Vdc Ciss − 36 − Output Capacitance VDS = 5.0 Vdc Coss − 17 − Transfer Capacitance VDG = 5.0 Vdc Crss − 6.5 − td(on) − 3.6 − tr − 9.7 − td(off) − 12 − tf − 1.7 − QT − 2.2 − nC IS − − −0.130 A ISM − − −0.520 VSD − − −2.2 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = −15 Vdc, ID = −2.5 Adc, RL = 50 W Fall Time Gate Charge VDD = −40 Vdc, ID = −0.5 A, VGS = −10 V ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) VGS = 0 V, IS = −130 mA V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.5 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 25°C VDS = 10 V 0.5 - 55°C 150°C 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -3.25 V 0.4 0.35 0.3 -3.0 V 0.25 0.2 -2.75 V 0.15 -2.5 V 0.1 -2.25 V 0.05 0 4 VGS = -3.5 V TJ = 25°C 0.45 0 1 2 3 4 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics www.onsemi.com 2 9 10 BSS84L, BVSS84L R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 9 VGS = -4.5 V 8 150°C 7 6 25°C 5 4 -55°C 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 7 150°C VGS = -10 V 6.5 6 5.5 5 4.5 4 25°C 3.5 3 -55°C 2.5 2 0.1 0 0.2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = -10 V ID = -0.52 A 1.4 VGS = -4.5 V ID = -0.13 A 1.2 1 0.8 -5 45 95 -8 -6 -5 -4 ID = -0.5 A -3 -2 -1 0 145 VDS = -40 V TJ = 25°C -7 0 1000 500 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate Charge 1 TJ = 150°C 0.1 25°C -55°C 0.01 0.001 0 0.5 1500 QT, TOTAL GATE CHARGE (pC) Figure 5. On−Resistance Variation with Temperature ID, DRAIN CURRENT (AMPS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 0.6 -55 0.6 Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current 1.6 0.5 0.4 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 1.8 0.3 1.0 1.5 2.0 2.5 -VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage www.onsemi.com 3 3.0 2000 BSS84L, BVSS84L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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