Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET QUICK REFERENCE DATA VR = 600 V k tab VF ≤ 1.8 V a 3 IF(AV) = 10 A trr = 19 ns (typ) APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies. The BYC10B-600 is supplied in the SOT404 surface mounting package. PINNING PIN SOT404 DESCRIPTION 1 no connection 2 cathode1 3 anode tab 2 tab cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current IFRM IFSM Tstg Tj CONDITIONS Tmb ≤ 114 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C1 Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C1 Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Storage temperature Operating junction temperature MIN. MAX. UNIT - 600 600 500 10 V V V A - 20 A - 65 71 A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS minimum footprint, FR4 board MIN. TYP. MAX. UNIT - - 2 K/W - 50 - K/W 1 it is not possible to make connection to pin 2 of the SOT404 package September 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10B-600 ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current trr Reverse recovery time trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 10 A; Tj = 150˚C IF = 20 A; Tj = 150˚C IF = 10 A; VR = 600 V VR = 500 V; Tj = 100 ˚C IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 125˚C IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 125˚C IF = 10 A; dIF/dt = 100 A/µs ID IL Vin MIN. TYP. MAX. UNIT - 1.4 1.7 2.0 9 1.1 19 1.8 2.3 2.8 200 3.0 - V V V µA mA ns - 32 40 ns - 9.5 12 A - 8 11 V Vin Vin = 400 V d.c. Vo = 400 V d.c. IR IF 150 uH typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. September 1998 Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 0.2 Irrm ID dIF/dt 100 0.5 20 90 D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10B-600 ID = IL 110 losses due to diode reverse recovery 120 time 0.1 15 10 I tp D= 130 VD 140 5 t T 0 tp T 0 150 15 5 10 Average forward current, IF(AV) (A) Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. 0.25 Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Diode reverse recovery switching losses, Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 V 10 A 20 A 0.15 10 A IF = 5 A 20 A 0.1 Tj = 125 C VR = 400 V IF = 5 A 0.05 0 100 10 100 1000 Rate of change of current, dIF/dt (A/us) Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. 8 1000 Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Transistor losses due to diode reverse recovery, Ptsw (W) 7 Rate of change of current, dIF/dt (A/us) 100 Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V BYC10-600 0 100 Rate of change of current, dIF/dt (A/us) 1 100 1000 Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. September 1998 Rate of change of current, dIF/dt (A/us) 1000 Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss I dI F BYC10B-600 15 rr time Q I Tj = 25 C Tj = 150 C dt t I R 100% 10% s 5 rrm 0 Peak forward recovery voltage, Vfr (V) max typ 10 Fig.9. Definition of reverse recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F 0 1 2 Forward voltage, VF (V) 3 4 Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25˚C and 150˚C. BYC10-600 100mA BYC10-600 Reverse leakage current (A) Tj = 25 C IF = 10 A 10mA 15 Tj = 125 C typ 100 C 1mA 10 75 C 100uA 50 C 5 25 C 10uA 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 1uA 200 Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. I 0 100 200 300 400 Reverse voltage (V) 500 600 Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR); parameter Tj 10 F Transient thermal impedance, Zth j-mb (K/W) 1 time 0.1 VF PD 0.01 V D= tp T fr VF 0.001 1us time Fig.11. Definition of forward recovery voltage Vfr September 1998 tp T 10us t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E 10s Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10B-600 MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.15. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.16. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10B-600 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.100