Vishay BYS12-90 Schottky barrier rectifier Datasheet

BYS12–90
Vishay Semiconductors
Schottky Barrier Rectifier
Features
D
D
D
D
D
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
15 811
Applications
Polarity protection
Low voltage, high frequency rectifiers
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Test Conditions
Type
tp=10ms, half sinewave
Symbol
VR=
VRRM
IFSM
IFAV
Value
Unit
90
V
30
1.5
A
A
Tj=Tstg
–55...+150
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction lead
Test Conditions
TL=constant
mounted on epoxy–glass hard tissue
Junction ambient mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol
RthJL
RthJA
Value
25
150
125
100
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Document Number 86015
Rev. 3, 08-Sep-00
Test Conditions
IF=1A
IF=15mA
VR=VRRM
VR=VRRM, Tj=100°C
Type
Symbol
VF
IR
Min
Typ
Max
750
360
100
1
Unit
mV
mA
mA
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1 (4)
BYS12–90
Vishay Semiconductors
Characteristics (Tj = 25_C unless otherwise specified)
10.000
100000
VR = VRRM
I R – Reverse Current ( mA )
1.000
10000
Tj = 25°C
0.100
0.010
I
F
– Forward Current ( A)
Tj = 150°C
1000
0.001
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
16471
Figure 1. Forward Current vs. Forward Voltage
1.2
RthJA
1.0
75
100
125
150
Tj – Junction Temperature ( °C )
2500
VR = VR RM
half sinewave
1.4
50
Figure 4. Reverse Current vs. Junction Temperature
PR – Reverse Power Dissipation ( mW )
I FAV– Average Forward Current ( A )
1.6
25
16473
v25K/W
0.8
0.6
0.4
0.2
VR = VRRM
2000
1500
PR–Limit
@100%VR
1000
500
0
0
0
20
40
60
80
100 120 140 160
Tamb – Ambient Temperature ( °C )
16472
25
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
50
75
100
125
150
Tj – Junction Temperature ( °C )
16474
Figure 5. Max. Reverse Power Dissipation vs.
Junction Temperature
I FAV– Average Forward Current ( A )
180
2.0
CD – Diode Capacitance ( pF )
1.6
RthJA=25K/W
1.2
100K/W
0.8
125K/W
0.4
95 9723
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
120
100
80
60
40
0
0.1
0
40
140
20
150K/W
0
f=1MHz
160
VR = 0 V, Half Sinewave
16475
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 6. Diode Capacitance vs. Reverse Voltage
Document Number 86015
Rev. 3, 08-Sep-00
BYS12–90
Vishay Semiconductors
Dimensions in mm
14275
Document Number 86015
Rev. 3, 08-Sep-00
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3 (4)
BYS12–90
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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4 (4)
Document Number 86015
Rev. 3, 08-Sep-00
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