Vishay BYT54J Fast silicon mesa rectifier Datasheet

BYT54.
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
D
D
D
D
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Applications
94 9539
Very fast rectifiers and switches
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average
g forward current
Test Conditions
Type
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
tp=10ms,
half sinewave
on PC board
l=10mm, TL=25°C
Junction and storage
g
temperature range
BYT54A–BYT54K
BYT54M
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
50
100
200
400
600
800
1000
30
Unit
V
V
V
V
V
V
V
A
IFAV
IFAV
Tj=Tstg
Tj=Tstg
0.75
1.25
–65...+175
–65...+165
A
A
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Document Number 86031
Rev. 2, 24-Jun-98
Test Conditions
IF=1A
VR=VRRM
VR=VRRM, Tj=150°C
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol
VF
IR
IR
trr
Min
Typ
Max
1.5
5
150
100
Unit
V
mA
mA
ns
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BYT54.
Vishay Telefunken
1000
120
100
I R – Reverse Current ( mA )
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Characteristics (Tj = 25_C unless otherwise specified)
80
60
l
l
40
Scattering Limit
100
10
1
20
TL=constant
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
94 9552
0
40
80
120
160
200
Tj – Junction Temperature ( °C )
94 9459
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Reverse Current vs. Junction Temperature
10
1.2
I FAV– Average Forward Current ( A )
VR = VR RM
0.1
IF – Forward Current ( A )
1.0
VR = VR RM
f=50Hz
RthJA 100K/W
PCB
0.8
v
0.6
0.4
Tj = 25°C
1
Scattering Limit
0.1
0.2
0
0.01
0
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
94 9457
0
0.6
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
1.2
1.8
2.4
3.0
VF – Forward Voltage ( V )
94 9460
Figure 5. Forward Current vs. Forward Voltage
I FAV– Average Forward Current ( A )
20
CD – Diode Capacitance ( pF )
2.0
VR = VR RM
f=50Hz
RthJA 45K/W
L=10mm
v
1.6
1.2
0.8
0.4
0
12
8
v
f 1 kHz
Tj = 25°C
4
0
0
94 9458
16
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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0.1
94 9461
1
10
100
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86031
Rev. 2, 24-Jun-98
BYT54.
Vishay Telefunken
Dimensions in mm
∅ 3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
26 min.
Document Number 86031
Rev. 2, 24-Jun-98
Cathode Identification
4.2 max.
94 9538
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
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3 (4)
BYT54.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86031
Rev. 2, 24-Jun-98
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