STMicroelectronics BYT60P-1000 Fast recovery rectifier diode Datasheet

BYT60P-1000
BYT261PIV-1000

FAST RECOVERY RECTIFIER DIODES
MAJOR PRODUCT CHARACTERISTICS
IF(AV)
2 x 60 A
VRRM
1000 V
VF (max)
trr (max)
1.8 V
70 ns
K2
A2
K1
A1
BYT261PIV-1000
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance = 45 pF
Inductance< 5 nH
ISOTOPTM
(Plastic)
DESCRIPTION
Dual or high single voltage rectifier devices suited
for Switch Mode Power Supplies and other power
converters.
These devices are packaged in ISOTOP or in
SOD93.
A
K
SOD93
(Plastic)
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IFRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
tp=5 µs F=1kHz
RMS forward current
ISOTOP
Average forward current
SOD93
Tc = 50°C
δ = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Value
1000
Unit
V
1000
140
A
A
100
ISOTOP
Tc = 60°C
SOD93
tp = 10 ms Sinusoidal
60
A
60
400
- 40 to + 150
A
°C
150
°C
TM: ISOTOP is a registered trademark of STMicroelectronics.
October 1999 - Ed: 4B
1/7
BYT60P-1000 / BYT261PIV-1000
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
Junction to case
Value
0.8
0.45
ISOTOP
Per diode
Total
SOD93
Total
0.7
Coupling
0.1
Rth(c)
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
VF *
Parameter
Test Conditions
Forward voltage drop
Tj = 25°C
Min.
Typ.
IF = 60 A
Reverse leakage
current
Tj = 25°C
Unit
V
1.8
Tj = 100°C
IR **
Max.
1.9
VR = VRRM
Tj = 100°C
100
µA
6
mA
Max.
170
Unit
ns
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.47 x IF(AV) + 0.005 IF2(RMS)
RECOVERY CHARACTERISTICS (per diode)
Symbol
trr
Test Conditions
Tj = 25°C
Min.
IF = 1A VR = 30V dIF/dt = - 15A/µs
Typ.
70
IF = 0.5A IR = 1A Irr = 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
tIRM
IRM
C=
2/7
VRP
VCC
Parameter
Test Conditions
Ma ximu m rev erse
reco ve ry time
dIF/dt = - 240 A/µs
dIF/dt = - 480 A/µs
Ma ximu m rev erse
reco ve ry current
dIF/dt = - 240 A/µs
Turn-off overvoltage
coefficient
Tj = 100°C VCC = 200V
IF = IF(AV)
dIF/dt = - 60A/µs
Lp = 2.5µH
(see fig. 14)
dIF/dt = - 480 A/µs
VCC = 200 V
IF = 60 A
Lp ≤ 0.05 µH
Tj = 100°C
(see fig. 13)
Min. Typ. Max. Unit
200 ns
120
40
A
4.5
/
44
3.3
BYT60P-1000 / BYT261PIV-1000
Fig. 1-1: Average forward power dissipation
versus average forward current (per diode,
ISOTOP).
Fig. 1-2: Average forward power dissipation
versus average forward current (SOD93).
PF(av)(W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
PF(av)(W)
δ = 0.1
δ = 0.2
130
120
110
100
90
80
70
60
50
40
30
20
10
0
δ = 0.5
δ = 0.05
δ=1
T
δ=tp/T
IF(av) (A)
0
10
20
30
40
50
tp
60
70
Fig. 2-1: Peak current versus form factor (per
diode, ISOTOP).
δ = 0.5
δ=1
δ = 0.05
T
δ=tp/T
IF(av) (A)
0
10
20
30
40
50
tp
60
70
IM(A)
500
450
400
350
300
250
200
150
100
50
0
0.0
T
δ=tp/T
P=70W
tp
P=40W
P=100W
P=20W
0.1
δ = 0.2
Fig. 2-2: Peak current versus form factor (SOD93).
IM(A)
500
450
400
350
300
250
200
150
100
50
0
0.0
δ = 0.1
δ
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
P=70W
δ=tp/T
tp
P=40W
P=100W
P=20W
0.1
δ
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP).
IF(av)(A)
70
Rth(j-a)=Rth(j-c)
60
SOD93
50
ISOTOP
40
30
Rth(j-a)=2.5°C/W
20
T
10
0
δ=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
3/7
BYT60P-1000 / BYT261PIV-1000
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (SOD93).
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (per diode, ISOTOP).
IM(A)
IM(A)
400
400
350
350
300
300
250
250
200
200
Tc=25°C
150
Tc=25°C
150
100
100
Tc=60°C
IM
50
t(s)
δ=0.5
0
1E-3
1E-2
1E-1
1E+0
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode,
ISOTOP).
t
t(s)
δ=0.5
0
1E-3
1E-2
1E-1
1E+0
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
K=[Zth(j-c)/Rth(j-c)]
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
Tc=50°C
IM
50
t
1.0
δ = 0.5
δ = 0.5
0.5
δ = 0.2
δ = 0.2
δ = 0.1
0.2
T
δ = 0.1
T
0.2
Single pulse
Single pulse
0.1
1E-3
δ=tp/T
tp(s)
1E-2
1E-1
δ=tp/T
tp(s)
tp
1E+0
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).
0.1
1E-3
1E-2
tp
1E-1
1E+0
Fig. 7: Junctioncapacitance versus reverse voltage
applied(typical values, per diode for ISOTOP).
IFM(A)
C(pF)
500
100
F=1MHz
Tj=25°C
Typical values
Tj=100°C
80
100
60
Tj=25°C
10
40
Tj=100°C
20
1
0.0
4/7
VR(V)
VFM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
10
100
200
BYT60P-1000 / BYT261PIV-1000
Fig. 8: Recovery charges versus dIF/dt (per diode
for ISOTOP).
Fig. 9: Recovery current versus dIF/dt (per diode
for ISOTOP).
Qrr(µC)
IRM(A)
10
80
IF=IF(av)
90% confidence
Tj=100°C
8
IF=IF(av)
90% confidence
Tj=100°C
70
60
6
50
40
4
30
2
20
dIF/dt(A/µs)
0
10
20
50
10
100
200
500
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode for ISOTOP).
20
50
100
200
500
Fig. 11: Forward recovery time versus dIF/dt (per
diode for ISOTOP).
VFP(V)
45
40
35
30
25
20
15
10
5
0
dIF/dt(A/µs)
0
10
tfr(µs)
1.50
IF=IF(av)
90% confidence
Tj=100°C
IF=IF(av)
90% confidence
Tj=100°C
1.25
1.00
0.75
0.50
0.25
dIF/dt(A/µs)
0
100
200
dIF/dt(A/µs)
300
400
500
0.00
0
100
200
300
400
500
Fig. 12: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
IRM
0.75
Qrr
0.50
Tj(°C)
0.25
0
25
50
75
100
125
150
5/7
BYT60P-1000 / BYT261PIV-1000
Fig. 13: Turn-off switching characteristics (without
serie inductance).
Fig. 14: Turn-off switching characteristics (with
serie inductance).
IF
IF
DUT
DUT
diF/dt
LC
diF/dt
LC
LP
VCC
VF
VCC
VF
VCC
VRP
I RM
VCC
tI RM
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
6/7
REF.
Millimeters
Inches
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
Min.
Max.
11.80
12.20
8.90
9.10
7.8
8.20
0.75
0.85
1.95
2.05
37.80
38.20
31.50
31.70
25.15
25.50
23.85
24.15
24.80 typ.
14.90
15.10
12.60
12.80
3.50
4.30
4.10
4.30
4.60
5.00
4.00
4.30
4.00
4.40
30.10
30.30
Min.
Max.
0.465
0.480
0.350
0.358
0.307
0.323
0.030
0.033
0.077
0.081
1.488
1.504
1.240
1.248
0.990
1.004
0.939
0.951
0.976 typ.
0.587
0.594
0.496
0.504
0.138
0.169
0.161
0.169
0.181
0.197
0.157
0.69
0.157
0.173
1.185
1.193
BYT60P-1000 / BYT261PIV-1000
PACKAGE MECHANICAL DATA
SOD93 Plastic
REF.
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min.
4.70
4.90 0.185
1.17
1.37 0.046
2.50
1.27
0.50
0.78 0.020
1.10
1.30 0.043
1.75
10.80
11.10 0.425
14.70
15.20 0.578
12.20
16.20
18.0
3.95
4.15 0.156
31.00
4.00
4.10 0.157
A
C
D
D1
E
F
F3
G
H
L
L2
L3
L5
L6
O
Typ. Max.
0.193
0.054
0.098
0.050
0.031
0.051
0.069
0.437
0.598
0.480
0.638
0.709
0.163
1.220
0.161
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
BYT60P-1000
BYT60P-1000
SOD93
3.79 g.
30
Tube
ISOTOP
28 g. (without screws)
10
Tube
BYT261PIV-1000 BYT261PIV-1000
Cooling method: by conduction (C)
Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws
recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of
terminals) with a thickness of 0.6 mm min and 2.2 mm max.
Recommended torque value (SOD93): 0.8 N.m.
Maximum torque value (SOD93): 1.0 N.m.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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