Vishay BYV27-100-TAP Ultra-fast avalanche sinterglass diode Datasheet

BYV27-50, BYV27-100, BYV27-150, BYV27-200
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Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
MECHANICAL DATA
Case: SOD-57
APPLICATIONS
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
• Very fast rectification diode e.g. for switch mode power
supply



Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
BYV27-200
BYV27-200
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYV27-200-TR
BYV27-200-TAP
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
TYPE DIFFERENTIATION
PACKAGE
VR = 50 V; IF(AV) = 2 A
VR = 100 V; IF(AV) = 2 A
VR = 150 V; IF(AV) = 2 A
VR = 200 V; IF(AV) = 2 A
SOD-57
SOD-57
SOD-57
SOD-57
PARTS TABLE
PART
BYV27-50
BYV27-100
BYV27-150
BYV27-200
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Peak reverse voltage, non repetitive
See electrical characteristics
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Junction and storage temperature range
PART
SYMBOL
VALUE
UNIT
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-50
BYV27-100
BYV27-150
BYV27-200
VRSM
VRSM
VRSM
VRSM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)
55
110
165
220
50
100
150
200
50
15
2
V
V
V
V
V
V
V
V
A
A
A
ER
20
mJ
Tj = Tstg
- 55 to + 175
°C
tp = 10 ms, half sine wave
I(BR)R = 1 A, Tj = 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Rev. 1.8, 04-Sep-12
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
45
100
K/W
K/W
Document Number: 86042
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 3A
VF
-
-
1.07
V
IF = 3 A, Tj = 175 °C
VF
-
-
0.88
V
VR = VRRM
IR
-
-
1
μA
Reverse current
Reverse recovery time
PART
VRSM
IR
-
-
100
μA
VR = VRRM, Tj = 165 °C
IR
-
-
150
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
25
ns
120
2.5
l
l
IFAV - Average Forward Current (A)
RthJA - Therm.Resist.Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
80
TL = constant
60
40
20
VR = VRRM
half sine wave
RthJA = 45 K/W
l = 10 mm
2.0
1.5
1.0
0.5
RthJA = 100 K/W
PCB: d = 25 mm
0
0.0
0
5
10
15
20
25
30
l - Lead Length (mm)
949526
0
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
20
40
60
80
100 120 140 160 180
Tamb - Ambient Temperature (°C)
16383
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
IR - Reverse Current (A)
IF - Forward Current (A)
VR = VRRM
10
Tj = 175 °C
Tj = 25 °C
1
0.1
0.01
0.001
0.0
16382
10
1
0.5
1.0
1.5
2.0
25
2.5
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.8, 04-Sep-12
100
16384
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
Document Number: 86042
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV27-50, BYV27-100, BYV27-150, BYV27-200
Vishay Semiconductors
100
70
VR = VRRM
f = 1 MHz
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
60
50
40
PR - Limit
at 100 % VR
30
PR - Limit
at 80 % VR
20
10
80
60
40
20
0
0
25
50
75
100
125
150
0.1
175
Tj - Junction Temperature (°C)
16385
16386
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 04-Sep-12
Document Number: 86042
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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