Vishay BYV28600 Ultra fast soft-recovery avalanche rectifier Datasheet

BYV28–600
Vishay Telefunken
Ultra Fast Soft–Recovery Avalanche Rectifier
Features
D Glass passivated
D Hermetically sealed axial–leaded
glass envelope
D Low reverse current
D Ultra fast soft recovery switching
Applications
94 9588
TV
SMPS
Power feedback systems
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Type Symbol
Value
Reverse voltage=Repetitive peak reverse
VR=VRRM
600
voltage
Peak forward surge current
tp=10ms, half-sinewave
IFSM
90
Average forward current
Tamb = 25°C, l = 10 mm
IFAV
3.5
Non–repetitive reverse avalanche energy Inductive load,
ER
20
I(BR)R=400mA
Junction and storage temperature range
Tj=Tstg
–55...+175
Unit
V
A
A
mJ
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 86043
Rev. 2, 24-Jun-98
Test Conditions
lead length l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
25
70
Unit
K/W
K/W
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BYV28–600
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Reverse breakdown voltage
Reverse recovery time
Forward recovery
Forward recovery time
Test Conditions
IF=3.5A
IF=5A
IF=3.5A, Tj=175°C
IF=5A, Tj=175°C
VR=VRRM
VR=VRRM, Tj=150°C
IR=100mA
IF=0.5A, IR=1A, iR=0.25A
IF=5A
Type
Symbol
VF
VF
VF
VF
IR
IR
V(BR)R
trr
VFP
tfr
Min
Typ
Max
1.25
1.35
0.95
1.06
5
150
600
50
6.2
210
Unit
V
V
V
V
mA
mA
V
ns
V
ns
Characteristics (Tj = 25_C unless otherwise specified)
PR – Reverse Power Dissipation ( mW )
300
1000
RthJA=
250
VR = VRRM
I R – Reverse Current ( mA )
25K/W
70K/W
200
VR=100%VRRM
150
100
VR=80%VRRM
50
0
10
1
25
14365
100
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
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25
14366
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Current vs.
Junction Temperature
Document Number 86043
Rev. 2, 24-Jun-98
BYV28–600
Vishay Telefunken
160
3.5
VR = VR RM
half sinewave
3.0
RthJA 25K/W
l=10mm
v
CD – Diode Capacitance ( pF )
I FAV– Average Forward Current ( A )
4.0
2.5
2.0
1.5
1.0
v
RthJA 70K/W
PCB: d=25mm
0.5
0
0
20
40
60
Tamb – Ambient Temperature ( °C )
14364
120
100
80
60
40
20
0
0.1
80 100 120 140 160 180
14367
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
f=1MHz
140
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
100
IF – Forward Current ( A )
Tj = 175°C
10
1
Tj = 25°C
0.1
0.01
0.001
0
14363
0.5
1.0
1.5
2.0
2.5
3.0
VF – Forward Voltage ( V )
Figure 4. Max. Forward Current vs. Forward Voltage
Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0 g
Cathode Identification
∅ 4.3 max.
technical drawings
according to DIN
specifications
∅ 1.35 max.
26 min.
Document Number 86043
Rev. 2, 24-Jun-98
4.2 max.
26 min.
94 9587
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BYV28–600
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86043
Rev. 2, 24-Jun-98
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