Vishay BYVB32-200HE3/45 Dual common-cathode ultrafast rectifier Datasheet

BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
TO-220AB
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
ITO-220AB
2
3
1
2
3
1
BYV32 Series
BYVF32 Series
PIN 1
PIN 2
PIN 3
CASE
PIN 1
PIN 2
PIN 3
TO-263AB
K
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
2
1
BYVB32 Series
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
18 A
VRRM
50 V to 200 V
IFSM
150 A
trr
25 ns
VF
0.85 V
TJ max.
150 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYV32-50
BYV32-100
BYV32-150
BYV32-200
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TC = 125 °C
IF(AV)
18
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
TJ, TSTG
- 65 to + 150
°C
VAC
1500
V
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88558
Revision: 05-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage per diode (1)
IF = 20 A
IF = 5.0 A
SYMBOL
BYV32-50
BYV32-100
BYV32-150
BYV32-200
UNIT
TJ = 25 °C
TJ = 100 °C
VF
1.15
0.85
V
TJ = 25 °C
TJ = 100 °C
IR
10
600
µA
Maximum reverse
recovery time per diode
IF = 1 A, VR = 30 V,
dI/dt = 100 A/µs, Irr = 10 % IRM
trr
25
ns
Typical junction
capacitance per diode
4.0 V, 1 MHz
CJ
45
pF
Maximum DC reverse
current per diode at rated
DC blocking voltage
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case per diode
SYMBOL
BYV
BYVF
BYVB
UNIT
RθJC
1.6
5.0
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.85
45
50/tube
Tube
TO-220AB
BYV32-200-E3/45
ITO-220AB
BYVF32-200-E3/45
1.97
45
50/tube
Tube
TO-263AB
BYVB32-200-E3/45
1.35
45
50/tube
Tube
TO-263AB
BYVB32-200-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
BYV32-200HE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
BYVF32-200HE3/45 (1)
1.97
45
50/tube
Tube
TO-263AB
BYVB32-200HE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
BYVB32-200HE3/81 (1)
1.35
81
800/reel
Tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88558
Revision: 05-May-08
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Resistive or Inductive Load
18
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
20
16
12
8
4
10
1
TC = 25 °C
0
0.1
0
25
50
75
100
125
150
0
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics Per Diode
60
150
TJ = 150 °C
10 ms Single Half Sine-Wave
125
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TC = 100 °C
100
100
75
50
25
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 5 mVp-p
50
40
30
20
10
0
1
100
10
1
10
100
Number of Cycles at 50 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number: 88558
Revision: 05-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88558
Revision: 05-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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