Vishay BYW86 Silicon mesa rectifier Datasheet

BYW82...BYW86
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D
D
D
D
D
D
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristics
Low reverse current
High surge current loading
Electrically equivalent diodes:
BYW82 – 1N5624 BYW83 – 1N5625
BYW84 – 1N5626 BYW85 – 1N5627
94 9588
Applications
Rectifier, general purpose
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
i2*t–rating
Junction and storage
temperature range
Test Conditions
Type
BYW82
BYW83
BYW84
BYW85
BYW86
tp=10ms, half sinewave
x
Tamb 65°C
tp=20ms, half sinewave,
Tj=175 °C
I(BR)R=1A, Tj=175°C
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
IFRM
IFAV
PR
Value
200
400
600
800
1000
100
18
3
1000
Unit
V
V
V
V
V
A
A
A
W
ER
20
mJ
i2*t
Tj=Tstg
40
–65...+175
A2*s
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 86051
Rev. 2, 24-Jun-98
Test Conditions
l=10mm, TL=constant
on PC board with spacing 37.5mm
Symbol
RthJA
RthJA
Value
25
70
Unit
K/W
K/W
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BYW82...BYW86
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery
y time
Reverse recovery charge
Test Conditions
IF=3A
VR=VRRM
VR=VRRM, Tj=100°C
IR=100mA, tp/T=0.01, tp=0.3ms
VR=0, f=0.47MHz
IF=0.5A, IR=1A, iR=0.25A
IF=1A, di/dt=5A/ms, VR=50V
IF=1A, di/dt=5A/ms
Type
Symbol
VF
IR
IR
V(BR)
CD
trr
trr
Qrr
Min
Typ
0.1
5
65
2
3
6
Max
1.0
1
10
1600
100
4
6
10
Unit
V
mA
mA
V
pF
ms
ms
mC
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Characteristics (Tj = 25_C unless otherwise specified)
4
I FAV– Average Forward Current ( A )
40
30
20
l
l
10
3
2
1
TL=constant
0
0
5
10
15
20
25
0
30
l – Lead Length ( mm )
94 9563
VR = VR RM
f=1kHz
RthJA=25K/W
L=10mm
0
80
120
160
200
Tamb – Ambient Temperature ( °C )
94 9564
Figure 1. Max. Thermal Resistance vs. Lead Length
40
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
VR = VR RM
f=1kHz
RthJA=70K/W
1.6
I R – Reverse Current ( mA )
I FAV– Average Forward Current ( A )
1000
2.0
PCB
1.2
0.8
0.4
Scattering Limit
100
0
1
VR = VR RM
0.1
0
94 9565
10
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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0
94 9566
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86051
Rev. 2, 24-Jun-98
BYW82...BYW86
Vishay Telefunken
100
80
CD – Diode Capacitance ( pF )
Tamb= 175°C
IF – Forward Current ( A )
Scattering Limit
10
1
Tamb= 25°C
0.1
0.01
40
20
0
0
0.6
1.2
1.8
2.4
3.0
0.1
VF – Forward Voltage ( V )
94 9567
1
100
10
VR – Reverse Voltage ( V )
94 9569
Figure 5. Max. Forward Current vs. Forward Voltage
Z thp – Thermal Resistance for Pulse Cond. (K/W)
60
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
1000
VR RM=1000V
100
RthJA=70K/W
tp/T=0.5
Tamb= 25°C
tp/T=0.2
10
tp/T=0.1
45°C
tp/T=0.05
tp/T=0.01
tp/T=0.02
1
10–4
70°C
60°C
100°C
10–3
10–2
10–1
100
101
10–1
tp – Pulse Length ( s )
94 9568
100
101
IFRM – Repetitive Peak
Forward Current ( A )
Figure 7. Thermal Response
Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0 g
Cathode Identification
∅ 4.3 max.
technical drawings
according to DIN
specifications
∅ 1.35 max.
26 min.
Document Number 86051
Rev. 2, 24-Jun-98
4.2 max.
26 min.
94 9587
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3 (4)
BYW82...BYW86
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86051
Rev. 2, 24-Jun-98
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