Vishay BYX84 Standard avalanche sinterglass diode Datasheet

BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949539
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• Rectification, general purpose
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYX82
VR = 200 V; IFAV = 2 A
SOD-57
BYX83
VR = 400 V; IFAV = 2 A
SOD-57
BYX84
VR = 600 V; IFAV = 2 A
SOD-57
BYX85
VR = 800 V; IFAV = 2 A
SOD-57
BYX86
VR = 1000 V; IFAV = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
See electrical characteristics
PART
SYMBOL
VALUE
UNIT
BYX82
VR = VRRM
200
V
BYX83
VR = VRRM
400
V
BYX84
VR = VRRM
600
V
BYX85
VR = VRRM
800
V
BYX86
VR = VRRM
1000
V
IFSM
50
A
IFRM
10
A
tp = 10 ms, half sine wave
Repetitive peak forward current
Tamb ≤ 45 °C
Average forward current
i2 * t-rating
Junction and storage temperature
range
IFAV
2
A
i2 * t
8
A2 * s
Tj = Tstg
- 55 to + 175
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Document Number: 86052
Rev. 1.6, 09-Aug-10
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BYX82, BYX83, BYX84, BYX85, BYX86
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
IF = 1 A
VF
-
0.9
1
V
VR = VRRM
IR
-
0.1
1
μA
VR = VRRM, Tj = 100 °C
IR
-
10
25
μA
VR = 4 V, f = 1 MHz
CD
-
20
-
pF
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
2
4
μs
IF = IR = 1 A, dI/dt = 5 A/μs
Qrr
-
3
6
μC
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Reverse recovery charge
UNIT
10
120
l
l
100
IF – Forward Current (A )
RthJA –Therm. Resist. Junction/ Ambient ( K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
80
TL= constant
60
40
Tj = 25°C
0.1
20
Scattering Limits
0.01
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
94 9572
0
RthJA ≤ 100 K/W
V RRM
160
VR
120
80
40
0
94 9579
BYX
82
BYX
84
BYX
83
BYX
85
BYX
86
1600
0
400
800
1200
Reverse / Repetitive Peak Reverse Voltage ( V )
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
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2
1.8
2.4
3.0
30
CD – Diode Capacitance ( pF )
200
RthJA ≤ 35 K/W
1.2
Fig. 3 - Forward Current vs. Forward Voltage
240
RthJA ≤ 57 K/W
0.6
V F – Forward Voltage ( V )
94 9573
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Tj – Junction Temperature ( °C )
Tj = 175°C
1
24
18
12
6
f = 1 MHz
Tj = 25°C
0
0.1
94 9574
1
10
100
V R – Reverse Voltage ( V )
Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86052
Rev. 1.6, 09-Aug-10
BYX82, BYX83, BYX84, BYX85, BYX86
Zthp–Thermal Resistance for PulseCond.(K/W)
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
1000
V RRM ≤ 200 V
RthJA ≤ 100 K/W
100
tp/T = 0.5
10
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
Tamb = 25°C
Tamb =100 °C
Tamb = 45 °C
Tamb = 125 °C
0.02
Tamb = 70°C
Tamb = 150 °C
0.01
Single Pulse
1
10–3
10–2
10–1
100
10 0
101
tp – Pulse Length ( s )
94 9575
101
102
I FRM – Repetitive Peak
Forward Current ( A )
Zthp– Thermal Resistance for PulseCond.(K/W)
Fig. 5 - Thermal Response
1000
V RRM ≤ 1000 V
t ≤ 10 μs
RthJA ≤ 100 K/W
100
tp/T = 0.5
Tamb = 45°C
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
10
Tamb = 25°C
Tamb = 60°C
Tamb = 70°C
0.02
Tamb =100°C
0.01
Single Pulse
1
10–3
10–2
10–1
100
101
10–1
tp – Pulse Length ( s )
94 9578
100
101
I FRM – Repetitive Peak
Forward Current ( A )
Zthp– Thermal Resistance for Pulse Cond.(K/W)
Fig. 6 - Thermal Response
1000
V RRM ≤ 200 V
RthJA ≤ 57 K/W
100
Tamb = 25°C
tp/T = 0.5
10
1
10–4
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
94 9577
10–3
Tamb = 70°C
Tamb = 100°C
Tamb = 125°C
Tamb = 150°C
Tamb = 45°C
Single Pulse
10–2
10–1
100
tp – Pulse Length ( s )
100
101
I FRM – Repetitive Peak
Forward Current ( A )
Fig. 7 - Thermal Response
Document Number: 86052
Rev. 1.6, 09-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
BYX82, BYX83, BYX84, BYX85, BYX86
Zthp–Thermal Resistance for Pulse Cond.(K/W)
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
1000
V RRM ≤ 1000 V
t ≤ 10 μs
RthJA ≤ 57 K/W
100
tp/T = 0.5
10
Tamb = 25 °C
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
100°C
Tamb = 45 °C
70°C
tp/T = 0.02
tp/T = 0.01
1
–4
10
10–3
Single Pulse
10–2
Tamb = 125°C
10–1
100
tp – Pulse Length ( s )
94 9576
100
101
I FRM – Repetitive Peak
Forward Current ( A )
Fig. 8 - Thermal Response
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86052
Rev. 1.6, 09-Aug-10
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Document Number: 91000
Revision: 11-Mar-11
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