Zetex BYY57A-800 50a silicon power rectifier diode Datasheet

BYY57A / BYY58A
50A Silicon Power Rectifier Diode
Part no.
Description
The BYY57A/58A are hermetically sealed 50Adiodes, which are available in different reverse
voltage classes up to 800V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and backoff-diodes
Features
Applications
•
Forward current 50A
•
Power supplies
•
Reverse voltage 75V – 800V
•
Rectifier diode in car generators
•
Hermetic press-fit package
•
Rectifier bridges/stacks
•
Available in different modifications of the
package
•
Back-off-diodes
Pinout details
Typical application circuit
Six pulse
bridge
connection
1
3 x BYY57A-700
~
~
~
3 x BYY58A-700
2
BYY57A: 1 – cathode; 2 - anode
+
BYY58A: 1 – anode; 2 - cathode
-
Ordering information
Device
Quantity per box
BYY57A-75; …; BYY57A-800
500
BYY58A-75; …; BYY58A-800
500
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57A- black, BYY58A – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57...……………………………... diode type
A400 ……………………………….. 50A diode / repetitive peak reverse voltage VRRM (in V) 400
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BYY57A / BYY58A
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Repetitive
peak
reverse
voltage
Symbol
Unit
BYY57A-75
BYY58A-75
75
BYY57A-100
BYY58A-100
100
BYY57A-150
BYY58A-150
150
BYY57A-200
BYY58A-200
200
BYY57A-300
BYY58A-300
BYY57A-400
BYY58A-400
BYY57A-500
BYY58A-500
500
BYY57A-600
BYY58A-600
600
BYY57A-700
BYY58A-700
700
BYY57A-800
BYY58A-800
800
Forward current, arithmetic value
VRRM
IFAV
300
V
400
50
IFSM
A
800
4050
Maximum rated value
∫i²dt
A²s
3200
Repetitive peak forward current
IFRM=π*IFAV
157
A
Effective forward current
IFRMS
78
A
Junction temperature
TJmax
200
°C
Storage temperature range
Tstg
- 50 to + 175
°C
Issue 2 – November 2006
2
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Tc = 150°C
A
900
Surge forward current
Test condition
half-sine wave,
≤ 10 ms
TJ = 175°C half-sine
wave, ≤ 10 ms
half-sine wave,
≤ 10 ms
TJ = 175°C half-sine
wave, ≤ 10 ms
f = >15 Hz
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BYY57A / BYY58A
Thermal resistance
Parameter
Junction to case
Symbol
Value
Unit
RθJC
0.8
°C/W
IF (A)
Thermal characteristics
60
50
40
30
20
10
0
164°C
200°C
-50
0
50
100
150
200
250
TC (°C)
Forward current derating diagram
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
55
50
45
40
35
30
25
20
15
10
5
0
0,75
0,8
0,85
0,9
0,95
1
1,05
VF (V)
Forward voltage characteristic
Issue 2 – November 2006
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BYY57A / BYY58A
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Forward
voltage
Symbol
BYY57A-75...800
BYY58A-75...800
BYY57A-75...800
BYY58A-75...800
Forward
voltage
(information
values)
BYY57A-75...800
BYY58A-75...800
BYY57A-75...150
BYY58A-75...150
BYY57A-200...800
Reverse
BYY58A-200...800
current
BYY57A-75...400
BYY58A-75...400
BYY57A-500...800
BYY58A-500...800
Threshold voltage (information
value)
Slope resistance (information
value)
Min.
Typ.
Max.
Unit
VF
-
1.05
1.15
V
VF
-
0.810
-
V
VF
-
-
1.2
V
-
-
3
IRRM
Test contitions
IF = 50 A,
measuring time
10ms (half-sine
wave)
IF = 20 A,
measuring time
10ms (half-sine
wave),TJ = 150°
IF = 75 A
mA
TJ = 150°C, at
VRRM
mA
at VRRM
-
-
1.5
-
-
0.25
-
-
0.1
V(FO)
-
0.66
-
V
TJ = 175°C
rF
-
4.5
-
mΩ
TJ = 175°C
IRRM
Options: Electrical characteristics for parallel connecting
(at Tamb = 25°C unless otherwise stated)
Option
1
2
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYY57A-300…800 and
BYY58A-300…800)
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
Symbol
∆VF
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
IF = 50 A, measuring
time 10ms (half-sine
wave)
IR
-
-
0.01
mA
at VRRM
4
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BYY57A / BYY58A
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
b
D
D1
D2
L
MIN
15,00
5,90
2,10
3,50
15,50
12,75
12,30
3,00
Millimeters
TYP
15,50
6,10
2,30
3,80
15,70
12,80
12,50
3,50
MAX
16,00
6,30
2,50
4,10
15,90
12,85
12,70
4,00
MIN
0,591
0,232
0,083
0,138
0,610
0,502
0,484
0,118
Inches
TYP
0,610
0,240
0,091
0,150
0,618
0,504
0,492
0,138
MAX
0,630
0,248
0,098
0,161
0,626
0,506
0,500
0,157
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© Zetex Semiconductors plc 2006
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