Zetex BYY58-600 35a silicon power rectifier diode Datasheet

BYY57 / BYY58
35A Silicon Power Rectifier Diode
Part no.
Description
The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse
voltage classes up to 1500V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and backoff-diodes
Features
Applications
•
Forward current 35A
•
Power supplies
•
Reverse voltage 75V – 1500V
•
Rectifier diode in car generators
•
Hermetic press-fit package
•
Rectifier bridges/stacks
•
Available in different modifications of the
package
•
Back-off-diodes
Pinout details
Typical application circuit
Six pulse
bridge
connection
1
3 x BYY57-1200
~
~
~
3 x BYY58-1200
2
BYY57: 1 – cathode; 2 - anode
+
BYY58: 1 – anode; 2 - cathode
-
Ordering information
Device
Quantity per box
BYY57-75; …; BYY57-1500
500
BYY58-75; …; BYY58-1500
500
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57- black, BYY58 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57………………………………... diode type
400………………………………….. repetitive peak reverse voltage VRRM (in V) 400
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BYY57 / BYY58
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Repetitive
peak
reverse
voltage
Symbol
Unit
BYY57-75
BYY58-75
75
BYY57-100
BYY58-100
100
BYY57-150
BYY58-150
150
BYY57-200
BYY58-200
200
BYY57-300
BYY58-300
300
BYY57-400
BYY58-400
400
BYY57-500
BYY58-500
500
BYY57-600
BYY58-600
600
BYY57-700
BYY58-700
BYY57-800
BYY58-800
800
BYY57-900
BYY58-900
900
BYY57-1000
BYY58-1000
1000
BYY57-1100
BYY58-1100
1100
BYY57-1200
BYY58-1200
1200
BYY57-1300
BYY58-1300
1300
BYY57-1400
BYY58-1400
1400
BYY57-1500
BYY58-1500
1500
Forward current, arithmetic value
VRRM
IFAV
700
35
V
IFSM
A
500
1800
Maximum rated value
∫i²dt
A²s
1250
Repetitive peak forward current
IFRM=π*IFAV
110
A
Effective forward current
IFRMS
55
A
Junction temperature
TJmax
200
°C
Storage temperature range
Tstg
- 50 to + 175
°C
Issue 4 – September 2006
2
© Zetex Semiconductors plc 2006
Tc = 150°C
A
600
Surge forward current
Test condition
half-sine wave,
≤ 10 ms
TJ = 175°C half-sine
wave, ≤ 10 ms
half-sine wave,
≤ 10 ms
TJ = 175°C half-sine
wave, ≤ 10 ms
f = >15 Hz
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BYY57 / BYY58
Thermal resistance
Parameter
Junction to case
Symbol
Value
Unit
RθJC
1.0
°C/W
IF (A)
Thermal characteristics
40
35
30
25
20
15
10
5
0
168°C
200°C
-50
0
50
100
150
200
250
TC (°C)
Forward current derating diagram
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
40
35
30
25
20
15
10
5
0
0,75
0,8
0,85
0,9
0,95
1
1,05
VF (V)
Forward voltage characteristic
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
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BYY57 / BYY58
Parameter
BYY57-75...1200
BYY58-75...1200
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...1200
BYY58-75...1200
Forward
BYY57-1300...1500
voltage
BYY58-1300...1500
(information
BYY57-75...1200
values)
BYY58-75...1200
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...150
BYY58-75...150
BYY57-200...1500
Reverse
BYY58-200...1500
current
BYY57-75...400
BYY58-75...400
BYY57-500...1500
BYY58-500...1500
Threshold voltage (information
value)
Slope resistance (information
value)
Forward
voltage
Symbol
Min.
Typ.
Max.
-
1.0
1.1
-
1.03
1.15
-
0.82
-
Unit
VF
V
V
VF
-
0.85
-
-
-
1.2
-
-
1.25
-
-
3
VF
V
IRRM
Test contitions
IF = 35 A,
measuring time
10ms (half-sine
wave)
IF = 20 A,
measuring time
10ms (half-sine
wave),TJ = 150°C
IF = 50 A
mA
TJ = 150°C, at
VRRM
mA
at VRRM
-
-
1.5
-
-
0.25
-
-
0.1
V(FO)
-
0.66
-
V
TJ = 175°C
rF
-
5.75
-
mΩ
TJ = 175°C
IRRM
Options: Electrical characteristics for parallel connecting
(at Tamb = 25°C unless otherwise stated)
Option
1
2
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYY57-300…1500 and
BYY58-300…1500)
Symbol
∆VF
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
IF = 35 A, measuring
time 10ms (half-sine
wave)
IR
-
-
0.01
mA
at VRRM
Packaging details
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BYY57 / BYY58
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
b
D
D1
D2
L
MIN
15,00
5,90
2,10
3,10
15,50
12,75
12,30
3,00
Millimeters
TYP
15,50
6,10
2,30
3,40
15,70
12,80
12,50
3,50
MAX
16,00
6,30
2,50
3,70
15,90
12,85
12,70
4,00
MIN
0,591
0,232
0,083
0,122
0,610
0,502
0,484
0,118
Inches
TYP
0,610
0,240
0,091
0,134
0,618
0,504
0,492
0,138
MAX
0,630
0,248
0,098
0,146
0,626
0,506
0,500
0,157
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© Zetex Semiconductors plc 2006
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