Vishay BZM55B51 Small signal zener diode Datasheet

BZM55-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Saving space
• Hermetic sealed parts
• Electrical data identical with the devices
BZT55..Series/TZM..Series
• Fits onto SOD-323/SOD-110 footprints
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• Available with tighter tolerances
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
9612315
Mechanical Data
Case: MicroMELF
Weight: approx. 12 mg
Packaging codes/options:
TR/2.5 k per 7" reel, 12.5 k/box
TR3/10 k per 13" reel, 10 k/box
Applications
• Voltage stabilization
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA ≤ 300 K/W
PV
500
mW
Z-current
IZ
PV/VZ
mA
Junction temperature
Tj
175
°C
Tstg
- 65 to + 175
°C
Power dissipation
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
Mounted on epoxy-glass hard
tissue, fig. 1
RthJA
500
K/W
Junction tie point
35 µm copper clad, 0.9 mm2
copper area per electrode
RthJL
300
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85597
Rev. 2.0, 26-Aug-10
Test condition
Symbol
IF = 200 mA
VF
Min.
Typ.
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Max.
Unit
1.5
V
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1
BZM55-Series
Vishay Semiconductors
Electrical Characteristics
BZM55C..
Zener voltage
range 1)
rzjT at
IZT,
f = 1kHz
VZ at IZT
Part number
Dynamic
resistance
rzjK at
IZK,
f = 1kHz
Ω
V
Test
current
Temperature
coefficient
Test
current
IZT
TKVZ
IZK
IR
IR
at Tamb at Tamb
= 25 °C = 150 °C
at VR
mA
µA
V
mA
%/K
min.
Reverse leakage current
min.
max.
max.
BZM55C2V4
2.28
2.56
< 85
< 600
5
- 0.09
- 0.06
1
< 50
< 100
1
BZM55C2V7
2.5
2.9
< 85
< 600
5
- 0.09
- 0.06
1
< 10
< 50
1
BZM55C3V0
2.8
3.2
< 90
< 600
5
- 0.08
- 0.05
1
<4
< 40
1
BZM55C3V3
3.1
3.5
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZM55C3V6
3.4
3.8
< 90
< 600
5
-0.08
- 0.05
1
<2
< 40
1
BZM55C3V9
3.7
4.1
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZM55C4V3
4
4.6
< 90
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
BZM55C4V7
4.4
5
< 80
< 600
5
- 0.05
0.02
1
< 0.5
< 10
1
BZM55C5V1
4.8
5.4
< 60
< 550
5
- 0.02
0.02
1
< 0.1
<2
1
BZM55C5V6
5.2
6
< 40
< 450
5
- 0.05
0.05
1
< 0.1
<2
1
BZM55C6V2
5.8
6.6
< 10
< 200
5
0.03
0.06
1
< 0.1
<2
2
BZM55C6V8
6.4
7.2
<8
< 150
5
0.03
0.07
1
< 0.1
<2
3
BZM55C7V5
7
7.9
<7
< 50
5
0.03
0.07
1
< 0.1
<2
5
BZM55C8V2
7.7
8.7
<7
< 50
5
0.03
0.08
1
< 0.1
<2
6.2
BZM55C9V1 *
8.5
9.6
< 10
< 50
5
0.03
0.09
1
< 0.1
<2
6.8
BZM55C10 *
9.4
0.6
< 15
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
BZM55C11 *
10.4
11.6
< 20
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZM55C12 *
11.4
12.7
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZM55C13 *
12.4
14.1
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZM55C15 *
13.8
15.6
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZM55C16 *
15.3
17.1
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZM55C18 *
16.8
19.1
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZM55C20 *
18.8
21.2
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZM55C22 *
20.8
23.3
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZM55C24 *
22.8
25.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZM55C27 *
25.1
28.9
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZM55C30 *
28
32
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZM55C33 *
31
35
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZM55C36 *
34
38
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZM55C39 *
37
41
< 90
< 500
2.5
0.04
0.12
0.5
< 0.1
<5
30
BZM55C43 *
40
46
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZM55C47 *
44
50
110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
BZM55C51 *
48
54
125
< 700
2.5
0.04
0.12
0.5
< 0.1
< 10
39
BZM55C56 *
52
60
135
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
43
BZM55C62 *
58
66
150
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
47
BZM55C68 *
64
72
200
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
51
BZM55C75 *
70
79
250
< 1500
2.5
0.04
0.12
0.5
< 0.1
< 10
56
Notes:
1) t ≤ 10 ms, T/t > 1000
p
p
*)
Additionnal measurement of voltage group 9V1 to 75 % at 95 % Vzmin. ≤ 35 nA at Tj 25 °C
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For technical questions within your region, please contact one of the following: Document Number 85597
Rev. 2.0, 26-Aug-10
[email protected], [email protected], [email protected]
BZM55-Series
Vishay Semiconductors
Electrical Characteristics
BZM55B..
Zener voltage
range 1)
VZ at IZT
Part number
Dynamic
resistance
rzjT at
IZT,
f = 1kHz
rzjK at
IZK,
f = 1kHz
Ω
V
Test
current
Temperature
coefficient
Test
current
IZT
TKVZ
IZK
mA
min.
max.
BZM55B2V4
2.35
2.45
< 85
< 600
BZM55B2V7
2.64
2.76
< 85
< 600
BZM55B3V0
2.94
3.06
< 90
BZM55B3V3
3.24
3.36
< 90
BZM55B3V6
3.52
3.68
BZM55B3V9
3.82
BZM55B4V3
%/K
Reverse leakage current
IR at
Tamb =
25 °C
mA
IR at
Tamb =
150 °C
µA
at VR
V
min.
max.
5
- 0.09
- 0.06
1
< 50
< 100
1
5
- 0.09
- 0.06
1
< 10
< 50
1
< 600
5
- 0.08
- 0.05
1
<4
< 40
1
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
3.98
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
4.22
4.38
< 90
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
BZM55B4V7
4.6
4.80
< 80
< 600
5
- 0.05
0.02
1
< 0.5
< 10
1
BZM55B5V1
5
5.20
< 60
< 550
5
- 0.02
0.02
1
< 0.1
<2
1
BZM55B5V6
5.48
5.72
< 40
< 450
5
- 0.05
0.05
1
< 0.1
<2
1
BZM55B6V2
6.08
6.32
< 10
< 200
5
0.03
0.06
1
< 0.1
<2
2
BZM55B6V8
6.66
6.94
<8
< 150
5
0.03
0.07
1
< 0.1
<2
3
BZM55B7V5
7.35
7.65
<7
< 50
5
0.03
0.07
1
< 0.1
<2
5
BZM55B8V2
8.04
8.36
<7
< 50
5
0.03
0.08
1
< 0.1
<2
6.2
BZM55B9V1 *
8.92
9.28
< 10
< 50
5
0.03
0.09
1
< 0.1
<2
6.8
BZM55B10 *
9.8
10.20
< 15
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
BZM55B11 *
10.78
11.22
< 20
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZM55B12 *
11.76
12.24
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZM55B13 *
12.74
13.26
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZM55B15 *
14.7
15.30
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZM55B16 *
15.7
16.30
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZM55B18 *
17.64
18.36
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZM55B20 *
19.6
20.40
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZM55B22 *
21.55
22.45
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZM55B24 *
23.5
24.5
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZM55B27 *
26.4
27.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZM55B30 *
29.4
30.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZM55B33 *
32.4
33.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZM55B36 *
35.3
36.7
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZM55B39 *
38.2
39.8
< 90
< 500
2.5
0.04
0.12
1
< 0.1
<5
30
BZM55B43 *
42.1
43.9
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZM55B47 *
46.1
47.9
< 110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
BZM55B51 *
50
52.0
< 125
< 700
2.5
0.04
0.12
0.5
< 0.1
< 10
39
BZM55B56 *
54.9
57.1
< 135
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
43
BZM55B62 *
60.8
63.2
< 150
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
47
BZM55B68 *
66.6
69.4
< 200
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
51
BZM55B75 *
73.5
76.5
< 250
< 1500
2.5
0.04
0.12
0.5
< 0.1
< 10
56
Notes:
1) t ≤ 10 ms, T/t > 1000
p
p
*)
Additionnal measurement of voltage group 9V1 to 75 % at 95 % Vzmin. ≤ 35 nA at Tj 25 °C
Document Number 85597
Rev. 2.0, 26-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
BZM55-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
200
CD - Diode Capacitance (pF)
Ptot - Total Power Dissipation (mW)
600
500
400
300
200
100
0
95 9602
80
120
160 200
40
Tamb - Ambient Temperature (°C)
50
0
VZtn - Relative Voltage Change
Tj = 25 °C
IZ = 5 mA
10
15
25
20
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
0
1.0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
0.8
1
0
5
10
15
20
- 60
25
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
0
60
120
180
240
Tj - Junction Temperature (°C)
95 9599
VZ - Z-Voltage (V)
95 9598
Figure 5. Typical Change of Working Voltage vs.
Junction Temperature
15
IF - Forward Current (mA)
100
10
5
IZ = 5 mA
0
10
Tj = 25 °C
1
0.1
0.01
0.001
-5
0
10
20
30
40
0
50
VZ - Z-Voltage (V)
Figure 3. Temperature Coefficient of Vz vs. Z-Voltage
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10
VZ - Z-Voltage (V)
1.3
100
95 9600
5
Figure 4. Diode Capacitance vs. Z-Voltage
1000
VZ - Voltage Change (mV)
100
95 9601
Figure 1. Total Power Dissipation vs. Ambient Temperature
TKVZ - Temperature Coefficient
of VZ (10-4/K)
VR = 2 V
Tj = 25 °C
0
0
4
150
95 9605
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
For technical questions within your region, please contact one of the following: Document Number 85597
Rev. 2.0, 26-Aug-10
[email protected], [email protected], [email protected]
BZM55-Series
Vishay Semiconductors
100
0.71
1.27
60
9.9
0.152
Ptot = 500 mW
Tamb = 25 °C
0.355
25
40
10
IZ - Z-Current (mA)
80
1.3
20
2.5
0
0
4
6
12
8
20
24
95 10329
VZ - Z-Voltage (V)
95 9604
Figure 7. Z-Current vs. Z-Voltage
Figure 10. Board for RthJA Definition (in mm)
50
IZ - Z-Current (mA)
Reflow Soldering
Ptot = 500 mW
Tamb = 25 °C
40
30
1.2
20
10
0.8
0.8
0.8
0
15
20
25
30
35
2.4
16773
VZ - Z-Voltage (V)
95 9607
Figure 8. Z-Current vs. Z-Voltage
Figure 11. Recommended Foot Pads (in mm)
rZ - Differential Z-Resistance (Ω)
1000
Wave Soldering
IZ = 1 mA
100
1.4
5 mA
10 10 mA
0.9
1.0
0.9
Tj = 25 °C
1
0
95 9606
5
10
15
20
25
VZ - Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
Document Number 85597
Rev. 2.0, 26-Aug-10
16774
2.8
Figure 12. Recommended Foot Pads (in mm)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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5
BZM55-Series
Zthp - Thermal Resistance for Pulse Cond. (KW)
Vishay Semiconductors
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
1
10-1
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
102
95 9603
tp - Pulse Length (ms)
Figure 13. Thermal Response
Package Dimensions in millimeters (inches): MicroMELF
0.6 (0.024)
*
1.1 (0.043)
1.2 (0.047)
<
1.
surface plan
gl
1 (0.039)
35
(
as 0.0
s 53
)
surface plan
Cathode indification
0.25 (0.010)
0.15 (0.006)
> R2.5 (0.098)
glass
2 (0.079)
1.8 (0.071)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
Wave soldering
2.4 (0.094)
2.8 (0.110)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
1.4 (0.055)
1.2 (0.047)
0.8 (0.031)
Reflow soldering
0.8 (0.031)
1 (0.039)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
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6
For technical questions within your region, please contact one of the following: Document Number 85597
Rev. 2.0, 26-Aug-10
[email protected], [email protected], [email protected]
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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