Zetex BZV61-39 Silicon power zener diode Datasheet

BZV61 / BZV62
Silicon Power Zener Diode
Part no.
Description
The BZV61/62 are hermetically sealed 35Aforward current diodes, which are available in
different Zener voltages.
Features
Applications
•
Forward current 35A
•
Power supplies
•
Zener voltages 22V, 27V, 33V or 39V
•
Rectifier diode in car alternators
•
Hermetic press-fit package
•
Available in different modifications of the
package
Pinout details
Typical application circuit
exciting current
Alternator
1
2
+
BZV61: 1 – cathode; 2 - anode
BZV62: 1 – anode; 2 - cathode
3 x BZV61
3x BZV62
Ordering information
Device
Quantity per box
BZV61-22; …; BZV61-39
500
BZV62-22; …; BZV62-39
500
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BZV61- black, BZV62 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BZV61………………………………... diode type
22………………………….……….. Zener voltage VZ (in V) 22
Issue 2 – August 2006
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BZV61 / BZV62
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Z-current
(continuous)
Symbol
BZV61-22
BZV62-22
BZV61-27
BZV62-27
BZV61-33
BZV62-33
BZV61-39
BZV62-39
Mean forward current
Unit
7.2
IZ
5.8
A
4.8
35
A
600
A
IFSM
500
1800
∫i²dt
Maximum rated value
A²s
1250
Repetitive peak forward current
Tc = 25°C
4.2
IF(AV)
Surge forward current
Test condition
sinusoidal,
f = 15 - 1000 Hz
TJ = 25°C,
half-sine wave,
≤ 10 ms
TJ = 175°C,
half-sine wave,
≤ 10 ms
TJ = 25°C,
half-sine wave,
≤ 10 ms
TJ = 175°C,
half-sine wave,
≤ 10 ms
IFRM=π*IF(AV)
110
A
f = 15 - 1000 Hz
Effective forward current
IF(RMS)
55
A
sinusoidal,
f = 15 - 1000 Hz
Junction temperature
TJmax
175
°C
Tstg
- 50 to + 150
°C
Storage temperature range
Thermal resistance
Parameter
Junction to case
Issue 2 – August 2006
© Zetex Semiconductors plc 2006
Symbol
Value
Unit
RθJC
0.8
°C/W
2
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BZV61 / BZV62
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Z-voltage
Symbol
BZV61-22
BZV62-22
BZV61-27
BZV62-27
BZV61-33
BZV62-33
BZV61-39
BZV62-39
Forward voltage
Reverse current
Min.
Typ.
Max.
20.8
22
23.3
25.1
27
28.9
31
33
35
37
39
41
VF
-
1.0
IR
-
VZ
at IZ = 100mA
1.1
V
IF = 35 A,
measuring time
1ms
-
200
µA
at VZ –5V
-
-
2
-
-
3.5
Ω
-
-
5
at IZ = 100mA
BZV62-22
BZV61-27
BZV62-27
BZV61-33
BZV62-33
BZV61-39
BZV62-39
-
-
6
BZV61-22
Dynamical
resistance BZV61-27
(information
BZV61-33
value)
BZV62-22
-
-
200
-
-
350
-
-
500
BZV61-39
BZV62-39
-
-
700
BZV61-22
Dynamical
resistance BZV61-27
(information
BZV61-33
value)
BZV62-22
-
-
20
-
-
35
-
-
50
BZV61-39
BZV62-39
-
-
80
Issue 2 – August 2006
© Zetex Semiconductors plc 2006
BZV62-27
BZV62-33
BZV62-27
BZV62-33
rZ
rZ
rZ
3
Test contitions
V
BZV61-22
Dynamical
resistance
Unit
mΩ
at IZ = 1A
mΩ
at IZ = 10A
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BZV61 / BZV62
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
b
D
D1
D2
L
MIN
15,00
5,70
2,10
3,10
15,50
12,75
12,30
3,00
Millimeters
TYP
15,50
6,20
2,30
3,40
15,70
12,80
12,70
3,50
MAX
16,00
6,70
2,50
3,70
15,90
12,85
13,10
4,00
MIN
0,591
0,224
0,083
0,122
0,610
0,502
0,484
0,118
Inches
TYP
0,610
0,244
0,091
0,134
0,618
0,504
0,500
0,138
MAX
0,630
0,264
0,098
0,146
0,626
0,506
0,516
0,157
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© Zetex Semiconductors plc 2006
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