HTSEMI BZX84C22CAW

BZX84C…CAW Series
SILICON PLANAR ZENER DIODES
3
1
2
1. Cathode 2. Cathode 3. Anode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
PD
200
mW
Tj ,TS
- 55 to + 150
Power Dissipation
Operating Junction and Storage Temperature Range
C
O
Electrical Characteristics at Ta = 25 OC (VF = 0.9 V Max. at IF = 10 mA)
Type
Marking
Code
BZX84C2V4CAW
BE
Zener Voltage Range 1)
VZ
Dynamic Resistance
Reverse Current
at lZT
ZZT
at lZT
ZZK
at IZK
IR
at VR
Min.(V)
Max.(V)
mA
Max.(Ω)
mA
Max.(Ω)
mA
Max.(µA)
V
2.2
2.6
5
100
5
600
1
50
1
BZX84C2V7CAW
BF
2.5
2.9
5
100
5
600
1
20
1
BZX84C3V0CAW
BH
2.8
3.2
5
95
5
600
1
20
1
BZX84C3V3CAW
BJ
3.1
3.5
5
95
5
600
1
5
1
BZX84C3V6CAW
BK
3.4
3.8
5
90
5
600
1
5
1
BZX84C3V9CAW
BM
3.7
4.1
5
90
5
600
1
3
1
BZX84C4V3CAW
BN
4
4.6
5
90
5
600
1
3
1
BZX84C4V7CAW
BP
4.4
5
5
80
5
600
1
3
2
BZX84C5V1CAW
BR
4.8
5.4
5
60
5
500
1
2
2
BZX84C5V6CAW
BX
5.2
6
5
40
5
480
1
1
2
BZX84C6V2CAW
BY
5.8
6.6
5
10
5
400
1
3
4
BZX84C6V8CAW
BZ
6.4
7.2
5
15
5
150
1
2
4
BZX84C7V5CAW
CA
7
7.9
5
15
5
80
1
1
5
BZX84C8V2CAW
CB
7.7
8.7
5
15
5
80
1
0.7
5
BZX84C9V1CAW
CC
8.5
9.6
5
15
5
80
1
0.5
6
BZX84C10CAW
CD
9.4
10.6
5
20
5
100
1
0.2
7
BZX84C11CAW
CE
10.4
11.6
5
20
5
150
1
0.1
8
BZX84C12CAW
CF
11.4
12.7
5
25
5
150
1
0.1
8
BZX84C13CAW
CH
12.4
14.1
5
30
5
150
1
0.1
8
BZX84C15CAW
CJ
13.8
15.6
5
30
5
170
1
0.1
10.5
BZX84C16CAW
CK
15.3
17.1
5
40
5
200
1
0.1
11.2
BZX84C18CAW
CM
16.8
19.1
5
45
5
200
1
0.1
12.6
BZX84C20CAW
CN
18.8
21.2
5
55
5
225
1
0.1
14
BZX84C22CAW
CP
20.8
23.3
5
55
5
225
1
0.1
15.4
BZX84C24CAW
CR
22.8
25.6
5
70
5
250
1
0.1
16.8
BZX84C27CAW
CX
25.1
28.9
2
80
2
250
0.5
0.1
18.9
BZX84C30CAW
CY
28
32
2
80
2
300
0.5
0.1
21
BZX84C33CAW
CZ
31
35
2
80
2
300
0.5
0.1
23.1
BZX84C36CAW
DE
34
38
2
90
2
325
0.5
0.1
25.2
BZX84C39CAW
DF
37
41
2
130
2
350
0.5
0.1
27.3
1)
Tested with pulses tp = 20 ms.
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
BZX84C…CAW Series
Electrical Characteristics at Ta = 25 OC (VF = 0.9 V Max. at IF = 10 mA)
Type
Zener Voltage Range 1)
Marking
Code
VZ
Min.(V)
Max.(V)
Dynamic Resistance
Reverse Current
at lZT
ZZT
at lZT
ZZK
at IZK
IR
at VR
mA
Max.(Ω)
mA
Max.(Ω)
mA
Max.(µA)
V
BZX84C43CAW
DH
40
46
2
150
2
375
0.5
0.1
30.1
BZX84C47CAW
DJ
44
50
2
170
2
375
0.5
0.1
32.9
BZX84C51CAW
DK
48
54
2
180
2
400
0.5
0.1
35.7
BZX84C56CAW
DM
52
60
2
200
2
425
0.5
0.1
39.2
BZX84C62CAW
DN
58
66
2
215
2
450
0.5
0.1
43.4
BZX84C68CAW
DP
64
72
2
240
2
475
0.5
0.1
47.6
BZX84C75CAW
DR
70
79
2
255
2
500
0.5
0.1
52.5
1)
Tested with pulses tp = 20 ms.
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５