Vishay BZX85C2V7-TR Silicon epitaxial planar zâ diode Datasheet

BZX85C...
Vishay Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Sharp edge in reverse characteristics
Low reverse current
Low noise
Very high stability
Available with tighter tolerances
Applications
94 9369
Voltage stabilization
Order Instruction
Type
Ordering Code
BZX85C2V7–TAP
BZX85C2V7–TR
BZX85C2V7
Remarks
Ammopack
Tape and Reel
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=4 mm, TL=25 °C
Type
Symbol
PV
Tj
Tstg
Value
1.3
175
–65...+175
Unit
W
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=4 mm, TL=constant
Symbol
RthJA
Value
110
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Document Number 85608
Rev. A4, 12-Mar-01
Test Conditions
IF=200mA
Type
Symbol
VF
Min
Typ
Max
1
Unit
V
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1 (5)
BZX85C...
Vishay Semiconductors
Type
BZX85C...
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
VZnom
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
IZT for VZT and rzjT
V 1)
2.5 to 2.9
< 20
2.8 to 3.2
< 20
3.1 to 3.5
< 20
3.4 to 3.8
< 20
3.7 to 4.1
< 15
4.0 to 4.6
< 13
4.4 to 5.0
< 13
4.8 to 5.4
< 10
5.2 to 6.0
<7
5.8 to 6.6
<4
6.4 to 7.2
< 3.5
7.0 to 7.9
<3
7.7 to 8.7
<5
8.5 to 9.6
<5
9.4 to 10.6
<7
10.4 to 11.6
<8
11.4 to 12.7
<9
12.4 to 14.1
< 10
13.8 to 15.6
< 15
15.3 to 17.1
< 15
16.8 to 19.1
< 20
18.8 to 21.2
< 24
20.8 to 23.3
< 25
22.8 to 25.6
< 25
25.1 to 28.9
< 30
28 to 32
< 30
31 to 35
< 35
34 to 38
< 40
37 to 41
< 50
40 to 46
< 50
44 to 50
< 90
48 to 54
< 115
52 to 60
< 120
58 to 66
< 125
64 to 72
< 130
70 to 79
< 135
W
rzjk at IZK
mA
< 400
1
< 400
1
< 400
1
< 500
1
< 500
1
< 500
1
< 500
1
< 500
1
< 400
1
< 300
1
< 300
1
< 200
0.5
< 200
0.5
< 200
0.5
< 200
0.5
< 300
0.5
< 350
0.5
< 400
0.5
< 500
0.5
< 500
0.5
< 500
0.5
< 600
0.5
< 600
0.5
< 600
0.5
< 750 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1500 0.25
< 1500 0.25
< 2000 0.25
< 2000 0.25
< 2000 0.25
< 2000 0.25
W
IR at VR
V
< 150
1
< 100
1
< 40
1
< 20
1
< 10
1
<3
1
<3
1
<1
1.5
<1
2
<1
3
<1
4
<1
4.5
<1
6.2
<1
6.8
< 0.5
7.5
< 0.5
8.2
< 0.5
9.1
< 0.5
10
< 0.5
11
< 0.5
12
< 0.5
13
< 0.5
15
< 0.5
16
< 0.5
18
< 0.5
20
< 0.5
22
< 0.5
24
< 0.5
27
< 0.5
30
< 0.5
33
< 0.5
36
< 0.5
39
< 0.5
43
< 0.5
47
< 0.5
51
< 0.5
56
mA
TKVZ
%/K
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.07 to –0.02
–0.07 to –0.01
–0.03 to +0.04
–0.01 to +0.04
0 to +0.045
+0.01 to +0.055
+0.015 to +0.06
+0.02 to +0.065
0.03 to 0.07
0.035 to 0.075
0.04 to 0.08
0.045 to 0.08
0.045 to 0.085
0.05 to 0.085
0.055 to 0.09
0.055 to 0.09
0.06 to 0.09
0.06 to 0.09
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
Tighter tolerances available on request: BZX85B... ± 2% of VZnom
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Document Number 85608
Rev. A4, 12-Mar-01
BZX85C...
Vishay Semiconductors
Characteristics (Tj = 25_C unless otherwise specified)
1000
C D – Diode Capacitance ( pF )
Ptot – Total Power Dissipation ( W )
2.0
1.6
1.2
l=4mm
0.8
l=10mm
l=20mm
0.4
0
–50
0
50
100
f = 1 MHz
Tamb= 25°C
0
10
20
30
40
50
60
VZ – Z-Voltage ( V )
95 9616
Figure 3. Diode Capacitance vs. Z–Voltage
250
1000
r Z – Differential Z-Resistance ( W )
R thJA – Therm. Resist. Junction / Ambient ( K/W )
10
200
150
Figure 1. Total Power Dissipation vs.
Ambient Temperature
200
150
l
l
100
50
IZ=1mA
0
5
10
15
20
25
2mA
100
5mA
10mA
20mA
10
TL=constant
0
1
30
1
l – Lead Length ( mm )
95 9613
100
10
VZ – Z-Voltage ( V )
95 9615
Figure 2. Thermal Resistance vs. Lead Length
Z thp – Thermal Resistance for Pulse Cond. (K/W)
VR = 0V
VR = 2V
VR = 5V
VR = 20V
VR = 30V
1
Tamb – Ambient Temperature ( °C )
95 9612
100
Figure 4. Differential Z–Resistance vs. Z–Voltage
1000
tp/T=0.01
tp/T=0.1
100
tp/T=0.5
RthJA=110K/W
DT=Tjmax–Tamb
tp/T=0.02
tp/T=0.05
tp/T=0.2
10
Single Pulse
iZM=(–VZ+(VZ2+4rzj
1
10–1
95 9614
100
101
102
DT/Zthp)1/2)/(2rzj)
103
tp – Pulse Length ( ms )
Figure 5. Thermal Response
Document Number 85608
Rev. A4, 12-Mar-01
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3 (5)
BZX85C...
Vishay Semiconductors
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9368
∅ 0.85 max.
∅ 2.5 max.
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3 g
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4 (5)
26 min.
4.1 max.
26 min.
Document Number 85608
Rev. A4, 12-Mar-01
BZX85C...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85608
Rev. A4, 12-Mar-01
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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