Central C103YY Silicon controlled rectifier Datasheet

DATA SHEET
C103Y
C103YY
C103A
C103B
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 200 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for
control systems and sensing circuit applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=60°C)
Peak One Cycle Surge
Peak Forward Gate Current
Peak Reverse Gate Voltage
Peak Gate Power Dissipation (tp=8.3ms)
Average Gate Power Dissipation
Storage Temperature
Junction Temperature
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
IGM
VGM
PGM
PG(AV)
Tstg
TJ
C103Y
30
C103YY
C103A
60
100
0.8
8.0
0.5
8.0
1.0
0.01
-65 to +150
-65 to +125
C103B
200
UNITS
V
A
A
A
V
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
IDRM, IRRM
IDRM, IRRM
TEST CONDITIONS
Rated VDRM, VRRM, RGK=1KΩ
IGT
IGT
VD=6.0V, RL=100Ω, RGK=1KΩ
VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C
IH
IH
RGK=1KΩ
5.0
mA
RGK=1KΩ, TC=-65°C
10
mA
VGT
VGT
VD=6.0V, RL=100Ω
VD=6.0V, RL=100Ω, TC=-65°C
0.8
V
1.0
V
VGT
VTM
VD=6.0V, RL=1KΩ, TC=125°C
ITM=1.0A
1.5
V
V
dv/dt
VD=VDRM, TC=125°C, RGK=1KΩ
MIN
TYP
Rated VDRM, VRRM, TC=125°C, RGK=1KΩ
MAX
1.0
UNITS
µA
50
µA
200
µA
500
µA
0.1
20
V/µs
(SEE REVERSE SIDE)
R0
C103 SERIES
SILICON CONTROLLED RECTIFIER
TO-92 PACKAGE - MECHANICAL OUTLINE
A
B
123
SYMBOL
A (DIA)
B
C
D
E
F
G
H
I
C
D
Lead Code:
E
F
G
H
I
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.175 0.205
4.45
5.21
0.170 0.210
4.32
5.33
0.500
12.70
0.016 0.022
0.41
0.56
0.100
2.54
0.050
1.27
0.125 0.165
3.18
4.19
0.080 0.105
2.03
2.67
0.015
0.38
TO-92 (REV: R1)
R1
1) Anode
2) Gate
3) Cathode
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