ON C106BG Sensitive gate silicon controlled rectifier Datasheet

C106 Series
Preferred Devices
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Features
•
•
•
•
•
•
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Sensitive Gate Triggering
Pb−Free Packages are Available*
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SCRs
4 A RMS, 200 − 600 Volts
G
A
K
TO−225AA
CASE 077
STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT
1. Cathode
2. Anode
3. Gate
Y
WW
C106xx
xx
G
YWW
C106xxG
= Year
= Work Week
= Device Code
= B, D, D1, M, M1
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 8
1
Publication Order Number:
C106/D
C106 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50−60 Hz, RGK = 1 kW,
TC = −40° to 110°C)
Max
Unit
VDRM,
VRRM
V
200
400
600
C106B
C106D, C106D1*
C106M, C106M1*
On-State RMS Current
(180° Conduction Angles, TC = 80°C)
IT(RMS)
4.0
A
Average On−State Current
(180° Conduction Angles, TC = 80°C)
IT(AV)
2.55
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C)
ITSM
20
A
I2t
1.65
A2s
Forward Peak Gate Power
(Pulse Width v1.0 msec, TC = 80°C)
PGM
0.5
W
Forward Average Gate Power
(Pulse Width v1.0 msec, TC = 80°C)
PG(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width v1.0 msec, TC = 80°C)
IGM
0.2
A
Circuit Fusing Considerations (t = 8.3 ms)
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Mounting Torque (Note 2)
6.0
in. lb.
−
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
75
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
ORDERING INFORMATION
Package
Shipping †
C106B
TO−225AA
500 Units / Box
C106BG
TO−225AA
(Pb−Free)
500 Units / Box
C106D
TO−225AA
500 Units / Box
C106DG
TO−225AA
(Pb−Free)
500 Units / Box
C106D1*
TO−225AA
500 Units / Box
C106D1G*
TO−225AA
(Pb−Free)
500 Units / Box
C106M
TO−225AA
500 Units / Box
C106MG
TO−225AA
(Pb−Free)
500 Units / Box
C106M1*
TO−225AA
500 Units / Box
C106M1G*
TO−225AA
(Pb−Free)
500 Units / Box
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
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2
C106 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
100
mA
mA
−
−
2.2
V
−
−
15
35
200
500
−
−
6.0
0.4
0.5
0.60
0.75
0.8
1.0
0.2
−
−
−
−
0.20
0.35
5.0
7.0
−
−
−
0.19
0.33
0.07
3.0
6.0
2.0
−
8.0
−
OFF CHARACTERISTICS
IDRM, IRRM
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
(ITM = 4 A)
VTM
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
mA
IGT
TJ = 25°C
TJ = −40°C
Peak Reverse Gate Voltage (IGR = 10 mA)
VGRM
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
VGT
V
TJ = 25°C
TJ = −40°C
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
VGD
Latching Current
(VAK = 12 V, IG = 20 mA)
IL
V
mA
TJ = 25°C
TJ = −40°C
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
V
IH
mA
TJ = 25°C
TJ = −40°C
TJ = +110°C
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
dv/dt
V/ms
3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
4. RGK is not included in measurement.
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
Anode +
VTM
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
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3
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
C106 Series
110
P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS)
10
TC, CASE TEMPERATURE (° C)
100
90
DC
80
70
60
50
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
40
30
20
10
0
.4
.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
Figure 1. Average Current Derating
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
6
DC
4
2
0
0
.4
.8
1.2
1.6
2.0
2.4
2.6
3.2
3.6
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
Figure 2. Maximum On−State Power Dissipation
1000
10
100
1
−40 −25
−10
5
20
35
50
65
80
95
10
−40 −25
110
−10
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
1.0
110
1000
0.9
I L , LATCHING CURRENT (m A)
VGT , GATE TRIGGER VOLTAGE (V)
8
IH, HOLDING CURRENT (m A)
IGT, GATE TRIGGER CURRENT (m A)
100
JUNCTION TEMPERATURE ≈ 110°C
0.8
0.7
100
0.6
0.5
0.4
0.3
0.2
−45 −25
−10
5
20
35
50
65
80
95
110
10
−40 −25
−10
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
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4
110
C106 Series
PACKAGE INTERCHANGEABILITY
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with
competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it
compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for
mounting compatibility.
.295
____
.305
.145
____
.155
.148
____
.158
.115
____
.130
.425
____
.435
.400
____
.360
.095
____
.105
.385
____
.365
.575
____
.655
.040
.020
____
.026
.094 BSC
.025
____
.035
.026
____
.019
.520
____
.480
5_ TYP
1 2 3
.050
____
.095
.127
____
DIA
.123
.135
____
.115
.315
____
.285
.420
____
.400
.105
____
.095
.105
____
.095
.015
____
.025
.054
____
.046
.045
____
.055
ON Semiconductor C-106 Package
.190
____
.170
Competitive C-106 Package
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5
C106 Series
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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C106/D
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