SBD T y p e : C10T06 C10T06Q-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.45g Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage C10T06Q-11A VRRM VRSM Average Rectified Output Current IO RMS Forward Current IF(RMS) Surge Forward Current IFSM Operating JunctionTemperature Range Storage Temperature Range Tjw Tstg 10 110 Unit 60 65 50 Hz Full Sine Wave Tc=108°C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 V V A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Peak Reverse Current IRM Peak Forward Voltage VFM Thermal Resistance Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 5 A per arm Rth(j-c) Junction to Case Min. Typ. Max. Unit - - 5 mA - - 0.58 V - - 3 °C /W C_T_ 11A OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C10T06Q/C10T06Q-11A (per Arm) INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 Tj=25°C Tj=150°C 1 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° AVERAGE FORWARD POWER DISSIPATION CONDUCTION ANGLE C10T06Q/C10T06Q-11A (Total) AVERAGE FORWARD POWER DISSIPATION (W) 8 RECT 180° SINE WAVE 7 6 5 4 3 2 1 0 0 2 4 6 8 AVERAGE FORWARD CURRENT (A) 10 12 PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C C10T06Q/C10T06Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 500 200 100 50 0 10 20 30 40 50 60 70 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C10T06Q/C10T06Q-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 14 RECT 180° 12 10 8 SINE WAVE 6 4 2 0 0 10 20 30 40 REVERSE VOLTAGE (V) 50 60 70 0° θ 180° AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE CONDUCTION ANGLE V RM =60 V C10T06Q/C10T06Q-11A (Total) 12 AVERAGE FORWARD CURRENT (A) RECT 180°. SINE WAVE. 10 8 6 4 2 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load C10T06Q/C10T06Q-11A SURGE FORWARD CURRENT (A) 120 100 80 60 40 20 I FSM 0.02s 0 0.02 0.05 0.1 0.2 TIME (s) 0.5 1 2 JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T06Q/C10T06Q-11A (per Arm) JUNCTION CAPACITANCE (pF) 1000 500 200 100 50 0.5 1 2 5 10 REVERSE VOLTAGE (V) 20 50 100