Digitron C35B Silicon controlled rectifier Datasheet

DIGITRON SEMICONDUCTORS
C35 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive forward and reverse blocking voltage
(TC = -65 to +125°C)
C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Value
Unit
(1)
VDRM or
VRRM
Non-repetitive peak reverse voltage
(TC = -65 to +125°C, V < 5.0ms)
C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
VRSM
Forward current RMS (all conduction angles)
25
50
100
150
200
250
300
400
500
600
700
800
Volts
35
75
150
225
300
350
400
500
600
720
840
960
Volts
IT(RMS)
35
Amps
Peak non-repetitive surge current (1cycle, 60 Hz)
ITSM
225
Amps
Circuit fusing considerations (t = 8.3ms)
I2t
75
A2s
Forward peak gate power
PGM
5
Watts
Forward average gate power
PG(AV)
0.5
Watts
Peak reverse gate voltage
VGRM
5
Volts
TJ
-65 to +125
°C
Tstg
-65 to +150
°C
Operating junction temperature range
Storage temperature range
Note 1: VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested
for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
144 Market Street
Kenilworth NJ 07033 USA
Symbol
Maximum
Unit
RӨJC
1.7
°C/W
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130129
DIGITRON SEMICONDUCTORS
C35 SERIES
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak reverse or forward blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
Symbol
IDRM or
IRRM
Average forward or reverse blocking current
(VD = Rated VDRM, TC = 125°C)
(VR = Rated VRRM, TC = 125°C)
C35U,F, A, G
C35B
C35H
C35C
C35D
C35E
C35M
C35S
C35N
IDRM(AV)
or
IRRM(AV)
Min
Typ.
Max
-
-
13
12
11
10
8
6
5
4.5
4
-
-
6.5
6
5.5
5
4
3
2.5
2.25
2
-
-
2
Unit
mA
mA
Peak on-state voltage
(ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
(VD = 12V, RL = 50Ω, TC = -65°C)
IGT
-
6
-
40
80
mA
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω, TC = -65°C to +125°C)
(VD = Rated VDRM, RL = 1000Ω, TC = 125°C)
VGT
0.25
-
3
-
Volts
-
-
100
10
20
25
-
-
Holding current
(VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A)
Critical rate of rise of forward blocking voltage
(VD = Rated VDRM, TC = 125°C)
C35U, F, M, S, N
C35A, G, B, H
C35C, D, E
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
IH
dv/dt
[email protected]
www.digitroncorp.com
Rev. 20130129
Volts
mA
V/µs
DIGITRON SEMICONDUCTORS
C35 SERIES
SILICON CONTROLLED RECTIFIERS
MECHANICAL CHARACTERISTICS
Case
TO-48
Marking
Alpha-numeric
Polarity
Cathode is stud
TO-48
A
B
C
F
H
J
K
L
Q
T
144 Market Street
Kenilworth NJ 07033 USA
Inches
Min
Max
0.604
0.614
0.551
0.559
1.050
1.190
0.135
0.160
0.265
0.420
0.455
0.620
0.670
0.300
0.350
0.055
0.085
0.501
0.505
phone +1.908.245-7200
fax +1.908.245-0555
Millimeters
Min
Max
15.340
15.600
14.000
14.200
2.670
30.230
3.430
4.060
6.730
10.670
11.560
15.750
17.020
7.620
8.890
1.400
2.160
12.730
12.830
[email protected]
www.digitroncorp.com
Rev. 20130129
Similar pages