CREE C450TR2227-0207 Rectangular led rf performance low forward voltage - 3.3 v typical at 20 ma Datasheet

Cree® TR2227™ LEDs
Data Sheet
CxxxTR2227-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting
in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is
optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top
contacts, consistent with industry standard packaging.
FEATURES
APPLICATIONS
•
•
Rectangular LED Rf Performance
−
450 & 460 nm
sideview packages
−
Mobile Appliances
527 nm
−
Digital Cameras
ŠŠ
−
Car Navigation Systems
�
––
Mobile Backlighting – 0.8 mm, 0.6 mm & 0.4 mm
TR-21™ – 21 mW min.
TR-06™ - 6 mW min.
•
Epoxy Die Attach
•
Low Forward Voltage - 3.3 V Typical at 20 mA
•
sideview packages
•
1000-V ESD Threshold Rating
−
Portable PCs
•
InGaN Junction on Thermally Conductive SiC
Substrate
−
Monitors
•
LCD Backlighting – 0.8 mm, 0.6 mm & 0.4 mm
LED Video Displays
CxxxTR2227-Sxx00 Chip Diagram
Bottom View
Top View
Die Cross Section
A
CPR3EF Rev
Data Sheet:
220 x 270 μm
Backside
Anode (+)
80 μm
Bottom Surface
190 x 240 μm
Junction
230 x 190 μm
Cathode (-)
80 x 80 μm
Subject to change without notice.
www.cree.com
t = 50 μm
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxTR2227-Sxx00
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
70 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450TR2227-Sxx00
2.7
3.3
3.7
2
20
C460TR2227-Sxx00
2.7
3.3
3.7
2
21
C527TR2227-Sxx00
2.9
3.4
3.9
2
34
Mechanical Specifications
Description
CxxxTR2227-Sxx00
Dimension
Tolerance
P-N Junction Area (μm)
190 x 230
±35
Chip Area (μm)
220 x 270
±35
Chip Thickness (μm)
50
±15
Au Bond Pad Diameter Anode (μm)
80
-5, +15
Au Bond Pad Thicknesses (μm)
1.0
±0.5
80 x 80
-5, +15
190 x 240
±35
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
2
CPR3EF Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR2227-Sxx00
LED chips are sorted to the Radiant Flux and Dominant Wavelength bins shown. A sorted die sheet contains die from only
one bin. Sorted die kit (CxxxTR2227-Sxx00) orders may be filled with any or all bins (CxxxTR2227-xxxx) contained in
the kit. All Radiant Flux (RF) values and all dominant wavelength values shown are specified at If = 20 mA.
TR 450 nm Kits
Radiant Flux
TR-21
C450TR2227-S2100
C450TR2227-0213
C450TR2227-0214
C450TR2227-0215
C450TR2227-0216
C450TR2227-0209
C450TR2227-0210
C450TR2227-0211
C450TR2227-0212
C450TR2227-0205
C450TR2227-0206
C450TR2227-0207
C450TR2227-0208
27.0 mW
24.0 mW
21.0 mW
445 nm
447.5 nm
450 nm
455 nm
452.5 nm
Dominant Wavelength
TR 460 nm Kits
Radiant Flux
TR-21
C460TR2227-S2100
C460TR2227-0213
C460TR2227-0214
C460TR2227-0215
C460TR2227-0216
C460TR2227-0209
C460TR2227-0210
C460TR2227-0211
C460TR2227-0212
C460TR2227-0205
C460TR2227-0206
C460TR2227-0207
C460TR2227-0208
27.0 mW
24.0 mW
21.0 mW
455 nm
457.5 nm
460 nm
465 nm
462.5 nm
Dominant Wavelength
TR 527 nm Kits
C527TR2227-S0600
TR-06
C527TR2227-0213
C527TR2227-0214
C527TR2227-0215
C527TR2227-0210
C527TR2227-0211
C527TR2227-0212
C527TR2227-0207
C527TR2227-0208
C527TR2227-0209
C527TR2227-0204
C527TR2227-0205
C527TR2227-0206
C527TR2227-0201
C527TR2227-0202
C527TR2227-0203
Radiant Flux
10.0 mW
9.0 mW
8.0 mW
7.0 mW
6.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
3
CPR3EF Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light Inte
100%
75%
50%
25%
Characteristic Curves
0%
0
5
10
15
20
25
30
These are representative measurements for the TR LED product. Actual curves will vary slightly
for the various radiant
If (mA)
flux and dominant wavelength bins.
Forward
Current
Wavelength
Shiftvs.
vs.Forward
ForwardVoltage
Current
Forward Current vs. Forward Voltage
30
14
If (mA) Shift (nm)
Dominant Wavelength
30
25
If (mA)
20
15
10
5
1
2
3
4
10
20
8
6
15
4
10
2
0
5
-2
0
-4
0
0
12
25
5
0
0
5
1
10
2
Relative Intensity vs. Forward Current
Relative Intensity vs. Wavelength
4
20
5
30
25
Relative Intensity vs. Wavelength
150%
100%
100%
125%
80%
80%
Relative Light Intensity
RelativeLight
LightIntensity
Intensity
Relative
3
Vf (V)
If (mA)
Vf (V)
100%
60%
75%
40%
50%
20%
25%
0%
0%
15
60%
40%
20%
0%
0
300
350
5
400
10
450
15
500
550
20
600
25
650
30
700
300
350
400
If (mA)
Wavelength
450
500
550
600
650
700
Wavelength
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
14
12
10
8
6
4
2
0
-2
-4
0
5
10
15
20
25
30
If (mA)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
4
CPR3EF Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
5
CPR3EF Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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