CREE C450TR2436-0309 Rectangular led rf performance low forward voltage - 3.1 v typical at 20 ma Datasheet

Cree® TR2436™ LEDs
Data Sheet
CxxxTR2436-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting
in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is
optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top
contacts, consistent with industry standard packaging.
FEATURES
APPLICATIONS
•
•
Rectangular LED Rf Performance
Small LCD Backlighting – 0.8 mm, 0.6 mm & −
450 & 460 nm – 30+ mW
0.4 mm sideview packages
−
470 nm – 27+ mW
−
Mobile Appliances
−
527 nm nm – 10+ mW
−
Digital Cameras
−
Car Navigation Systems
•
Epoxy Die Attach
•
Low Forward Voltage - 3.1 V Typical at 20 mA
•
1000-V ESD Threshold Rating
0.4 mm sideview packages
•
InGaN Junction on Thermally Conductive SiC
−
Portable PCs
Substrate
−
Monitors
•
Medium LCD Backlighting – 0.8 mm, 0.6 mm & •
LED Video Displays
•
Entertainment Systems
CxxxTR2436-Sxx00 Chip Diagram
Bottom View
B
CPR3DR Rev
Data Sheet:
Top View
Gold Bond Pad
Anode (+)
90 μm Diameter
TR2436 LED
240 x 360 μm
Gold Bond Pad
Cathode (-)
98 x 98 μm
Subject to change without notice.
www.cree.com
Die Cross Section
Backside
Bottom Surface
140 x 260 μm
t = 115 μm
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxTR2436-Sxx00
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature
-40°C to +120°C
Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
≤30°C / ≤85% RH
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450TR2436-Sxx00
2.7
3.1
3.4
2
20
C460TR2436-Sxx00
2.7
3.1
3.4
2
21
C470TR2436-Sxx00
2.7
3.1
3.4
2
21
C527TR2436-Sxx00
2.9
3.2
3.6
2
35
Mechanical Specifications
Description
CxxxTR2436-Sxx00
Dimension
Tolerance
P-N Junction Area (μm)
200 x 320
±35
Chip Area (μm)
240 x 360
±35
115
±15
Au Bond Pad Diameter Anode (μm)
90
-5, +15
Au Bond Pad Thicknesses (μm)
1.0
±0.5
98 x 98
-5, +15
140 x 260
±35
Chip Thickness (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
Notes:
1.
2.
3.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy
encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC
and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature
limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
2
CPR3DR Rev B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR2436-Sxx00
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR2436-Sxxxx) orders may be filled with any or all bins (CxxxTR2436-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
TR 450 nm Kits
Radiant Flux (mW)
C450TR2436-S3000
C450TR2436-0317
C450TR2436-0318
C450TR2436-0319
C450TR2436-0320
C450TR2436-0313
C450TR2436-0314
C450TR2436-0315
C450TR2436-0316
C450TR2436-0309
C450TR2436-0310
C450TR2436-0311
C450TR2436-0312
C450TR2436-0305
C450TR2436-0306
C450TR2436-0307
C450TR2436-0308
37
35
33
30
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
TR 460 nm Kits
C460TR2436-S3000
C460TR2436-0317
C460TR2436-0318
C460TR2436-0319
C460TR2436-0320
C460TR2436-0313
C460TR2436-0314
C460TR2436-0315
C460TR2436-0316
C460TR2436-0309
C460TR2436-0310
C460TR2436-0311
C460TR2436-0312
C460TR2436-0305
C460TR2436-0306
C460TR2436-0307
C460TR2436-0308
37
35
33
30
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
3
CPR3DR Rev B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR2436-Sxx00 (continued)
TR 470 nm Kits
Radiant Flux (mW)
C470TR2436-S2700
C470TR2436-0313
C470TR2436-0314
C470TR2436-0315
C470TR2436-0316
C470TR2436-0309
C470TR2436-0310
C470TR2436-0311
C470TR2436-0312
C470TR2436-0305
C470TR2436-0306
C470TR2436-0307
C470TR2436-0308
C470TR2436-0301
C470TR2436-0302
C470TR2436-0303
C470TR2436-0304
35
33
30
27
465
467.5
470
475
472.5
Dominant Wavelength
Radiant Flux (mW)
TR 527 nm Kits
C527TR2436-S1000
C527TR2436-0307
C527TR2436-0308
C527TR2436-0309
C527TR2436-0304
C527TR2436-0305
C527TR2436-0306
C527TR2436-0301
C527TR2436-0302
C527TR2436-0303
14
12
10
520
525
530
535
Dominant Wavelength
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
4
CPR3DR Rev B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
100
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
10
100
80
5
If (mA)
DW Shift (nm)
If (mA)
80
60
40
20
60
0
40
-5
20
-10
0
0
-15
0
0
1
2
3
4
5
1
0
2
20
40
Vf (V)
Relative Intensity vs Peak Wavelength
Relative Intensity (%)
Relative
Intensity
(%)
Relative
Intensity
(%)
80
60
0%
80
100
Relative Intensity vs Peak Wavelength
300%
100
100%
60
5
120
120
200%
4
If (mA)
Relative Intensity vs. Forward Current
400%
3
Vf (V)
40
100
80
60
40
20
20
0
20
40
0
320
60
If (mA)
420
80
520
100
0
320
420
520
620
Wavelength (nm)
620
Wavelength (nm)
Wavelength Shift vs. Forward Current
10
DW Shift (nm)
5
0
-5
-10
-15
0
20
40
60
80
100
If (mA)
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
5
CPR3DR Rev B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
460TR239 (TR2436)Radiation Pattern
This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
6
CPR3DR Rev B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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