CREE C450TR5050-0210 Adhesive die attach low forward voltage 3.3 v typical at 120 ma Datasheet

TR5050™ LEDs
CxxxTR5050-Sxx000
Data Sheet
Cree’s TR5050 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5050 LEDs are among the brightest in the top-view market while delivering a
low forward voltage, resulting in a very bright and highly efficient solution. The design is optimally suited for industrystandard top-view packages.
FEATURES
APPLICATIONS
•
•
Rectangular LED RF Performance
–
450 & 460 nm – 180 mW min
Large LCD Backlighting
–
Television
•
Adhesive Die Attach
•
General Illumination
•
Low Forward Voltage – 3.3 V Typical at 120 mA
•
Medium LCD Backlighting
•
Maximum DC Forward Current - 180 mA
–
Portable PCs
•
Class 2 ESD Rating
–
Monitors
•
InGaN Junction on Thermally Conductive SiC
•
LED Video Displays
Substrate
•
White LEDs
CxxxTR5050-Sxx000 Chip Diagram
.CPR3ER Rev
Data Sheet:
Top View
Die Cross Section
Bottom View
TR5050 LED
500 x 500 μm
Cathode (-)
98-μm diameter
Anode (+)
90-μm diameter
Bottom Surface
327 x 327 μm
t = 175 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1&3
DC Forward Current
CxxxTR5050-Sxx000
180 mA
Note 4
Peak Forward Current (1/10 duty cycle @ 1 kHz)
230 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450TR5050-Sxx000
2.7
3.3
3.5
2
20
C460TR5050-Sxx000
2.7
3.3
3.5
2
21
Mechanical Specifications
Description
CxxxTR5050-Sxx000
Dimension
Tolerance
P-N Junction Area (μm)
426 x 443
±35
Chip Area (μm)
500 x 500
±35
175
±15
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
Au Bond Pad Diamater Cathode (μm)
98
±10
327 x 327
±35
Bottom Area (μm)
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB)
packages for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific
package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 120 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for
the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to
optimize product performance.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 2
CPR3ER Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR5050-Sxx000
Radiant Flux (mW)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR5050-Sxxxx) orders may be filled with any or all bins (CxxxTR5050-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA.
C450TR5050-S18000
C450TR5050-0209
C450TR5050-0210
C450TR5050-0211
C450TR5050-0212
C450TR5050-0205
C450TR5050-0206
C450TR5050-0207
C450TR5050-0208
C450TR5050-0201
C450TR5050-0202
C450TR5050-0203
C450TR5050-0204
220.0
200.0
180.0
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 3
CPR3ER Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light I
100%
75%
50%
25%
Characteristic Curves
0%
0
50
100
150
200
If (mA)
These are representative measurements for the TR5050 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Dominant Wavelength Shift Vs Junction Temperature
Forward Current vs. Forward Voltage
Dominant
Wavelength
ShiftShift
(nm)(nm)
Dominant
Wavelength
180
160
If (mA)
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
Wavelength Shift vs. Forward Current
6
3.5
53
4
2
3
1
2
10
0
-1
-1
-2
-2
-3
4
25
50
0
75
50
100
125
100
Junction Temperature
(°C)
Vf (V)
150
150
200
If (mA)
Forward Current vs. Forward Voltage
0.000
150
150%
-0.050
125
125%
-0.100
Voltage Shift (V)
Relative Light If
Intensity
(mA)
Voltage Shift Vs Junction Temperature
Relative Intensity vs. Forward Current
200
175%
175
100
100%
75
75%
50
50%
25
-0.150
-0.200
-0.250
-0.300
0
25%
-0.350
0
0.5
1
1.5
2
2.5
3
3.5
4
-0.400
0%
0
20
40
80Vf
60
(V) 100
120
140
160
180
25
50
75
100
125
150
Junction Temperature (°C)
If (mA)
Relative Light Intensity Vs Junction Temperature
Wavelength Shift vs. Forward Current
100%
Dominant
Wavelength
(nm)
Relative
Light Shift
Intensity
3
95%
2
90%
1
85%
0
80%
-1
75%
-2
70%
-3
25
0
50
20
40
75
60
100
80
100
125
120
Junction Temperature (°C)
140
150
160
180
If (mA)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 4
CPR3ER Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation
Pattern– TR500
Far
Fields
This is a representative radiation pattern for the TR5050 LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010, Cree, Inc. (Confidential)
pg. 2
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc. 5
CPR3ER Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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