Marktech C460MB290-0217 Megabright generation ii led Datasheet

MegaBright® Generation II LEDs
CxxxMB290-Sxx00
Cree’s MB™ Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s
proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire
bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s
MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V
ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series
chips are compatible with most radial and SMT LED assembly processes.
FEATURES
•
APPLICATIONS
MegaBright LED Performance
•
White LEDs
–
•
LCD Backlighting Units
460 & 470nm

MB-8 – 8.0 mW min.
•
Outdoor LED Video Displays

MB-10 - 10.0 mW min.
•
Automotive Dashboard Lighting

MB-12 - 12.0 mW min.
•
Traffic Signals

MB-14 - 14.0 mW min.

MB-16 - 16.0 mW min (460 nm)
–
505 nm - 6.0 mW min.
–
527 nm - 5.0 mW min.
•
Single Wire Bond Structure
•
Class 2 ESD Rating
CxxxMB290-Sxx00 Chip Diagram
R3CK, Rev. C
Datasheet: CP
Top View
Bottom View
G•SiC LED Chip
300 x 300 μm
Mesa (junction)
250 x 250 μm
Gold Bond Pad
112 μm Diameter
Die Cross Section
InGaN
Anode (+)
SiC Substrate
h = 250 μm
Backside
Metallization
Cathode (-)
Subject to change without notice.
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3
CxxxMB290-Sxx00
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Electrostatic Discharge Classification (MIL-STD-883E)Note 2
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460MB290-Sxx00
2.9
3.3
3.7
2
21
C470MB290-Sxx00
2.9
3.3
3.7
2
22
C505MB290-S0600
2.9
3.3
3.9
2
30
C527MB290-S0500
2.9
3.3
3.9
2
35
Mechanical Specifications
Description
CxxxMB290-Sxx00
Dimension
Tolerance
P-N Junction Area (μm)
250 x 250
± 25
Top Area (μm)
300 x 300
± 25
Bottom Area (μm)
200 x 200
± 25
Chip Thickness (μm)
250
± 25
Au Bond Pad Diameter (μm)
112
± 20
Au Bond Pad Thickness (μm)
1.2
± 0.5
Backside Metal Diameter (μm)
104
± 20
Notes:
1.
2.
3.
4.
5.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements
taken using Illuminance E.
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed
80 μm.
Specifications are subject to change without notice.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
CPR3CK Rev. C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxMB290-Sxx00
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxMB290-Sxx00) orders may be filled with any or all bins (CxxxMB290-02xx) contained
in the kit.
Radiant Flux
MB-16
C460MB290-S1600
18.0 mW
C460MB290-0221
C460MB290-0222
C460MB290-0223
C460MB290-0224
C460MB290-0217
C460MB290-0218
C460MB290-0219
C460MB290-0220
16.0 mW
455 nm
457.5 nm
Radiant Flux
MB-14
462.5 nm
18.0 mW
16.0 mW
C460MB290-0221
C460MB290-0222
C460MB290-0223
C460MB290-0224
C460MB290-0217
C460MB290-0218
C460MB290-0219
C460MB290-0220
C460MB290-0213
C460MB290-0214
C460MB290-0215
C460MB290-0216
14.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
C460MB290-S1200
C460MB290-0221
C460MB290-0222
C460MB290-0223
C460MB290-0224
C460MB290-0217
C460MB290-0218
C460MB290-0219
C460MB290-0220
C460MB290-0213
C460MB290-0214
C460MB290-0215
C460MB290-0216
C460MB290-0209
C460MB290-0210
C460MB290-0211
C460MB290-0212
18.0 mW
16.0 mW
14.0 mW
12.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
465 nm
C460MB290-S1400
MB-12
Radiant Flux
460 nm
Dominant Wavelength
CPR3CK Rev. C
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxMB290-Sxx00 (continued)
Radiant Flux
MB-10
C460MB290-S1000
18.0 mW
16.0 mW
14.0 mW
12.0 mW
C460MB290-0221
C460MB290-0222
C460MB290-0223
C460MB290-0224
C460MB290-0217
C460MB290-0218
C460MB290-0219
C460MB290-0220
C460MB290-0213
C460MB290-0214
C460MB290-0215
C460MB290-0216
C460MB290-0209
C460MB290-0210
C460MB290-0211
C460MB290-0212
C460MB290-0205
C460MB290-0206
C460MB290-0207
C460MB290-0208
10.0 mW
455 nm
457.5 nm
MB-8
460 nm
Dominant Wavelength
462.5 nm
465 nm
C460MB290-S0800
C460MB290-0221
C460MB290-0222
C460MB290-0223
C460MB290-0224
C460MB290-0217
C460MB290-0218
C460MB290-0219
C460MB290-0220
C460MB290-0213
C460MB290-0214
C460MB290-0215
C460MB290-0216
C460MB290-0209
C460MB290-0210
C460MB290-0211
C460MB290-0212
C460MB290-0205
C460MB290-0206
C460MB290-0207
C460MB290-0208
C460MB290-0201
C460MB290-0202
C460MB290-0203
C460MB290-0204
Radiant Flux
18.0 mW
16.0 mW
14.0 mW
12.0 mW
10.0 mW
8.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
CPR3CK Rev. C
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxMB290-Sxx00 (continued)
Radiant Flux
MB-14
C470MB290-S1400
16.0 mW
C470MB290-0217
C470MB290-0218
C470MB290-0219
C470MB290-0220
C470MB290-0213
C470MB290-0214
C470MB290-0215
C470MB290-0216
14.0 mW
465 nm
467.5 nm
Radiant Flux
MB-12
Radiant Flux
472.5 nm
16.0 mW
14.0 mW
C470MB290-0217
C470MB290-0218
C470MB290-0219
C470MB290-0220
C470MB290-0213
C470MB290-0214
C470MB290-0215
C470MB290-0216
C470MB290-0209
C470MB290-0210
C470MB290-0211
C470MB290-0212
12.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
C470MB290-S1000
C470MB290-0217
C470MB290-0218
C470MB290-0219
C470MB290-0220
C470MB290-0213
C470MB290-0214
C470MB290-0215
C470MB290-0216
C470MB290-0209
C470MB290-0210
C470MB290-0211
C470MB290-0212
C470MB290-0205
C470MB290-0206
C470MB290-0207
C470MB290-0208
16.0 mW
14.0 mW
12.0 mW
10.0 mW
465 nm
467.5 nm
MB-8
470 nm
Dominant Wavelength
472.5 nm
475 nm
C470MB290-S0800
16.0 mW
14.0 mW
12.0 mW
10.0 mW
C470MB290-0217
C470MB290-0218
C470MB290-0219
C470MB290-0220
C470MB290-0213
C470MB290-0214
C470MB290-0215
C470MB290-0216
C470MB290-0209
C470MB290-0210
C470MB290-0211
C470MB290-0212
C470MB290-0205
C470MB290-0206
C470MB290-0207
C470MB290-0208
C470MB290-0201
C470MB290-0202
C470MB290-0203
C470MB290-0204
8.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
475 nm
C470MB290-S1200
MB-10
Radiant Flux
470 nm
Dominant Wavelength
CPR3CK Rev. C
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxMB290-Sxx00 (continued)
C505MB290-S0600
Radiant Flux
505MB
C505MB290-0205
C505MB290-0206
C505MB290-0203
C505MB290-0204
C505MB290-0201
C505MB290-0202
9.0 mW
7.5 mW
6.0 mW
500nm
505nm
Dominant Wavelength
C527MB290-S0500
Radiant Flux
527MB
510nm
7.0 mW
6.0 mW
C527MB290-0207
C527MB290-0208
C527MB290-0209
C527MB290-0204
C527MB290-0205
C527MB290-0206
C527MB290-0201
C527MB290-0202
C527MB290-0203
5.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
CPR3CK Rev. C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the MB product. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Wavelength Shift vs Forward Current
Relative Intensity vs Forward Current
12.00
140
10.00
120
460nm
8.00
100
527nm
Shift (nm)
% Intensity
6.00
80
60
505nm
4.00
2.00
40
0.00
20
-2.00
0
0
0
5
10
15
20
25
30
5
10
15
20
25
30
-4.00
If (mA)
If (mA)
Forward Current vs Forward Voltage
Relative Intensity vs Peak Wavelength
100
30
80
Relative Intensity (%)
25
If (mA)
20
15
10
5
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
400
Vf (V)
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
CPR3CK Rev. C
500
600
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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