CREE C460RT230-S0100 Low forward voltage 2.9 v typical at 5 ma Datasheet

Cree® RazerThin® RT230TM LEDs
CxxxRT230-S0100
Data Sheet
Cree’s RazerThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s RT series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
FEATURES
APPLICATIONS
•
Small Chip - 200 x 200 x 85 μm
•
Low Forward Voltage
––
White
––
––
Blue
––
Green
•
•
2.9 V Typical at 5 mA
RT230™ LED Performance
Mobile Phone Key Pads
––
2.0 mW min. Blue (455-475 nm)
•
Audio Product Display Lighting
––
1.5 mW min. Green (520-535 nm & 500-
•
Mobile Appliance Keypads
510 nm)
•
Single Wire Bond Structure
•
Class 2 ESD Rating
CxxxRT230-S0100 Chip Diagram
R3CN, Rev. B
Datasheet: CP
Top View
Bottom View
Side View
G•SiC LED Chip
200 x 200 μm
Mesa (junction)
176 x 176 μm
Gold Bond Pad
105 μm Diameter
Subject to change without notice.
www.cree.com
Anode (+)
InGaN
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Cathode (-)
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxRT230-S0100
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460RT230-S0100
2.6
2.9
3.2
2
21
C470RT230-S0100
2.6
2.9
3.2
2
22
C505RT230-S0100
2.6
2.9
3.2
2
30
C527RT230-S0100
2.6
2.9
3.2
2
35
Mechanical Specifications
Description
CxxxRT230-S0100
Dimension
Tolerance
P-N Junction Area (μm)
176 x 176
± 25
Top Area (μm)
200 x 200
± 25
Bottom Area (μm)
200 x 200
± 25
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
85
± 10
105
-5, +15
1.2
± 0.5
80 x 80
± 25
Notes:
1.
2.
3.
4.
5.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Specifications are subject to change without notice.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
2
CPR3CN Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Standard Bins for CxxxRT230-S0100
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxRT230-S0100) orders may be filled with any or all bins (CxxxRT230-0xxx) contained
in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If =
5 mA.
C460RT230-S0100
Radiant Flux
6.0 mW
4.0 mW
C460RT230-0103
C460RT230-0104
C460RT230-0101
C460RT230-0102
2.0 mW
455 nm
460 nm
Dominant Wavelength
C470RT230-S0100
Radiant Flux
6.0 mW
4.0 mW
C470RT230-0103
C470RT230-0104
C470RT230-0101
C470RT230-0102
2.0 mW
465 nm
470 nm
Dominant Wavelength
Radiant Flux
Radiant Flux
2.5 mW
C505RT230-0105
C505RT230-0106
C505RT230-0103
C505RT230-0104
C505RT230-0101
C505RT230-0102
1.5 mW
500 nm
505 nm
Dominant Wavelength
510 nm
C527RT230-S0100
4.0 mW
2.5 mW
475 nm
C505RT230-S0100
6.0 mW
4.0 mW
465 nm
C527RT230-0104
C527RT230-0105
C527RT230-0106
C527RT230-0101
C527RT230-0102
C527RT230-0103
1.5 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
3
CPR3CN Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Characteristic Curves
These are representative measurements for the RT230 product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
12.0
30
527nm
8.0
25
505nm
470nm
4.0
Shift (nm)
If (mA)
20
15
0.0
10
-4.0
5
-8.0
-12.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
5
10
15
20
25
30
If (mA)
Vf (V)
Relative Intensity vs. Peak Wavelength
Relative Intensity vs Forward Voltage
140
100
460 nm
120
505 nm
80
Relative Intensity (%)
% Relative Intensity
527 nm
100
80
60
40
60
40
20
20
0
0
0
5
10
15
If (mA)
20
25
30
350
400
450
500
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
4
CPR3CN Rev. B
550
600
650
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
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