Marktech C460RT260-S1600 Razerthin gen iii led Datasheet

RazerThin® Gen III LEDs
CxxxRT260-Sxxxx
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.
260 Gen 3 Schematic
FEATURES
APPLICATIONS
•
Thin 95 μm Chip
•
White LEDs
•
Reduced Forward Voltage
•
LCD Backlighting Units
–
•
Cellular Phone LCD Backlighting
•
3.2 V Typical at 20 mA
RazerThin LED Performance
–
460 nm - 12 mW min.
–
470 nm - 10 mW min.
–
527 nm - 5 mW min.
•
Single Wire Bond Structure
•
Class 2 ESD Rating
PRELIMINARY
•
Automotive Dashboard Lighting
•
LED Video Displays
•
Audio Product Display Lighting
CxxxRT260-Sxxxx Chip Diagram
.CPR3DT Rev
Data Sheet:
Top View
Die Cross Section
G•SiC LED Chip
260 x 260 μm
Bottom View
230 x 230 μm
Anode (+)
t = 95 μm
Gold Bond Pad
112 μm Diameter
Cathode (-)
Backside
Metallization
Subject to change without notice.
www.cree.com
90 μm square
Maximum Ratings at TA = 25°C Notes 1&3
CxxxRT260-Sxxxx
DC Forward Current
50 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460RT260-Sxxxx
2.7
3.2
3.7
1
24
C470RT260-Sxxxx
2.7
3.2
3.7
1
25
C527RT260-Sxxxx
2.7
3.3
3.7
1
40
Mechanical Specifications
Description
CxxxRT260-Sxxxx
Dimension
Tolerance
P-N Junction Area (μm)
210 x 210
± 35
Top Area (μm)
260 x 260
± 35
Bottom Area (μm)
230 x 230
± 35
95
± 15
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
112
± 20
Au Bond Pad Thickness (μm)
1.0
± 0.5
Back Contact Metal Width (μm)
90
± 10
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
CPR3DT Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxRT260-Sxx000
Radiant Flux
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxRT260-Sxx000) orders may be filled with any or all bins (CxxxRT260-xxxx) contained
in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA.
C460RT260-S1600
C460RT260-0313
C460RT260-0314
C460RT260-0315
C460RT260-0316
C460RT260-0309
C460RT260-0310
C460RT260-0311
C460RT260-0312
18.0 mW
16.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Radiant Flux
C460RT260-S1400
C460RT260-0313
C460RT260-0314
C460RT260-0315
C460RT260-0316
C460RT260-0309
C460RT260-0310
C460RT260-0311
C460RT260-0312
C460RT260-0305
C460RT260-0306
C460RT260-0307
C460RT260-0308
18.0 mW
16.0 mW
14.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Radiant Flux
C460RT260-S1200
C460RT260-0313
C460RT260-0314
C460RT260-0315
C460RT260-0316
C460RT260-0309
C460RT260-0310
C460RT260-0311
C460RT260-0312
C460RT260-0305
C460RT260-0306
C460RT260-0307
C460RT260-0308
C460RT260-0301
C460RT260-0302
C460RT260-0303
C460RT260-0304
18.0 mW
16.0 mW
14.0 mW
12.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
CPR3DT Rev. -
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiant Flux
Standard Bins for CxxxRT260-Sxx000 (continued)
C470RT260-S1600
C470RT260-0317
C470RT260-0318
C470RT260-0319
C470RT260-0320
C470RT260-0313
C470RT260-0314
C470RT260-0315
C470RT260-0316
18.0 mW
16.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Radiant Flux
C470RT260-S1400
C470RT260-0317
C470RT260-0318
C470RT260-0319
C470RT260-0320
C470RT260-0313
C470RT260-0314
C470RT260-0315
C470RT260-0316
C470RT260-0309
C470RT260-0310
C470RT260-0311
C470RT260-0312
18.0 mW
16.0 mW
14.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Radiant Flux
C470RT260-S1200
C470RT260-0317
C470RT260-0318
C470RT260-0319
C470RT260-0320
C470RT260-0313
C470RT260-0314
C470RT260-0315
C470RT260-0316
C470RT260-0309
C470RT260-0310
C470RT260-0311
C470RT260-0312
C470RT260-0305
C470RT260-0306
C470RT260-0307
C470RT260-0308
18.0 mW
16.0 mW
14.0 mW
12.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
C470RT260-S1000
C470RT260-0317
C470RT260-0318
C470RT260-0319
C470RT260-0320
C470RT260-0313
C470RT260-0314
C470RT260-0315
C470RT260-0316
C470RT260-0309
C470RT260-0310
C470RT260-0311
C470RT260-0312
C470RT260-0305
C470RT260-0306
C470RT260-0307
C470RT260-0308
C470RT260-0301
C470RT260-0302
C470RT260-0303
C470RT260-0304
Radiant Flux
18.0 mW
16.0 mW
14.0 mW
12.0 mW
10.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
CPR3DT Rev. -
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiant Flux
Standard Bins for CxxxRT260-Sxx000 (continued)
C527RT260-S06500
C527RT260-0310
C527RT260-0311
C527RT260-0312
C527RT260-0307
C527RT260-0308
C527RT260-0309
8.0 mW
6.5 mW
520 nm
525 nm
530 nm
Dominant Wavelength
535 nm
Radiant Flux
C527RT260-S0500
C527RT260-0310
C527RT260-0311
C527RT260-0312
C527RT260-0307
C527RT260-0308
C527RT260-0309
C527RT260-0304
C527RT260-0305
C527RT260-0306
8.0 mW
6.5 mW
5.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Radiant Flux
C527RT260-S03500
C527RT260-0310
C527RT260-0311
C527RT260-0312
C527RT260-0307
C527RT260-0308
C527RT260-0309
C527RT260-0304
C527RT260-0305
C527RT260-0306
C527RT260-0301
C527RT260-0302
C527RT260-0303
8.0 mW
6.5 mW
5.0 mW
3.5 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
CPR3DT Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
% Intens
150%
100%
50%
0%
Characteristic
Curves
0
5
10
15
20
25
30
35
40
45
50
If (mA)
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Wavelength Shift vs. Forward Current
30
15
25
10
20
5
Shift (nm)
If (mA)
Forward Current vs. Forward Voltage
15
0
10
-5
5
-10
-15
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
35
40
45
50
If (mA)
Vf (V)
Relative Intensity vs. Forward Current
250%
% Intensity
200%
150%
100%
50%
0%
0
5
10
15
20
25
30
35
40
45
50
If (mA)
Forward Current vs. Forward Voltage
30
25
If (mA)
20
15
10
5
0
0
0.5
1
1.5
2
2.5
Vf (V)
3
3.5
4
4.5
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
CPR3DT Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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