CREE C470EZ700-0308-2 Ezbright power chip led rf performance low forward voltage â 3.6 v typical at 350 Datasheet

Cree® EZ700™ Gen II LED
Data Sheet
CxxxEZ700-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the flux eutectic
method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s
EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of
applications, such as general illumination, automotive lighting and LCD backlighting.
FEATURES
APPLICATIONS
•
•
EZBright Power Chip LED Rf Performance
General Illumination
−
240 mW min. - 450 & 460 nm
–
Aircraft
−
200 mW min. - 470 nm
–
Decorative Lighting
−
90 mW min. - 527 nm
–
Task Lighting
•
Lambertian Radiation
–
Outdoor Illumination
•
Conductive Epoxy, Solder Paste or Preforms,
–
Projection Lighting
•
or Flux Eutectic Attach
•
White LEDs
Low Forward Voltage – 3.6 V Typical at 350
•
Crosswalk Signals
mA
•
Backlighting
•
Single Wire Bond Structure
•
Automotive
•
Dielectric Passivation Across Epi Surface
CxxxEZ700-Sxx000-2 Chip Diagram
.B
CPR3DW Rev
Data Sheet:
Top View
Die Cross Section
Bottom View
EZBright LED Chip
680 x 680 µm
Backside
Metallization
Gold Bond Pad
150 x 150 µm
Cathode (-)
t = 170 µm
Anode (+);
3 µm AuSn
Dielectric Passivation
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Note 1
CxxxEZ700-Sxx000-2
DC Forward Current
750 mA
Peak Forward Current
1000 mA
LED Junction Temperature
Note 3
145°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +120°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Forward Voltage (Vf, V)
Note 2
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ700-Sxx000-2
3.0
3.5
3.9
2
20
C460EZ700-Sxx000-2
3.0
3.5
3.9
2
21
C470EZ700-Sxx000-2
3.0
3.5
3.9
2
22
C527EZ700-Sxx000-2
3.1
3.5
4.0
2
35
Mechanical Specifications
Description
CxxxEZ700-Sxx000-2
Dimension
Tolerance
P-N Junction Area (μm)
650 x 650
±35
Chip Area (μm)
680 x 680
±35
170
±25
150 x 150
±25
Chip Thickness (μm)
Top Au Bond Pad (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
3.0
±1.5
680 x 680
±35
3.0
±1.5
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of
65°C.
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
2
CPR3DW Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxEZ700-Sxx000-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ700-Sxx000-2) orders may be filled with any or all bins (CxxxEZ700-0xxx-2)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux
C450EZ700-S24000-2
C450EZ700-0313-2
C450EZ700-0314-2
C450EZ700-0315-2
C450EZ700-0316-2
C450EZ700-0309-2
C450EZ700-0310-2
C450EZ700-0311-2
C450EZ700-0312-2
C450EZ700-0305-2
C450EZ700-0306-2
C450EZ700-0307-2
C450EZ700-0308-2
310 mW
280 mW
240 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
452.5 nm
455 nm
Radiant Flux
C460EZ700-S24000-2
C460EZ700-0313-2
C460EZ700-0314-2
C460EZ700-0315-2
C460EZ700-0316-2
C460EZ700-0309-2
C460EZ700-0310-2
C460EZ700-0311-2
C460EZ700-0312-2
C460EZ700-0305-2
C460EZ700-0306-2
C460EZ700-0307-2
C460EZ700-0308-2
310 mW
280 mW
240 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Radiant Flux
C470EZ700-S20000-2
C470EZ700-0309-2
C470EZ700-0310-2
C470EZ700-0311-2
C470EZ700-0312-2
C470EZ700-0305-2
C470EZ700-0306-2
C470EZ700-0307-2
C470EZ700-0308-2
C470EZ700-0301-2
C470EZ700-0302-2
C470EZ700-0303-2
C470EZ700-0304-2
280 mW
240 mW
200 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Radiant Flux
C527EZ700-Sxx00-2
C527EZ700-0210-2
C527EZ700-0211-2
C527EZ700-0212-2
C527EZ700-0207-2
C527EZ700-0208-2
C527EZ700-0209-2
C527EZ700-0204-2
C527EZ700-0205-2
C527EZ700-0206-2
C527EZ700-0201-2
C527EZ700-0202-2
C527EZ700-0203-2
150 mW
130 mW
110 mW
90 mW
520 nm
525 nm
530 nm
Dominant Wavelength
535 nm
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
3
CPR3DW Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the EZBright Power Chip LED product. Actual curves will vary slightly for the
various radiant flux and dominant wavelength bins.
Dominant Wavelength Shift vs. Junction Temperature
Voltage Shift vs. Junction Temperature
Forward Current vs. Forward Voltage
500
Voltage
Shift(nm)
(V)
DW Shift
If (mA)
400
300
200
100
0
0
1
2
3
4
5
6
0.100
5
0.000
4
-0.100
3
2
-0.200
1
-0.300
0
-0.400
-1
-0.500
-2
-0.600 25
25
50
50
Vf (V)
110%
175%
105%
150%
100%
125%
100%
75%
50%
25%
0%
95%
90%
85%
80%
75%
70%
0
65%
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
25
50
If (mA)
5
8
4
DW Shift (nm)
DW
DW Shift
Shift (nm)
(nm)
6
12
0
-4
-8
100
125
150
Dominant Wavelength Shift vs. Junction Temperature
16
4
75
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
-12
-16
150
150
Relative Light Intensity vs. Junction Temperature
200%
Relative Intensity
Relative
Relative Intensity
Intensity
Relative Intensity vs. Forward Current
75
100
125
75
100
125
Junction Temperature (°C)
Junction Temperature (°C)
3
2
1
0
-1
0
-2
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
25
If (mA)
50
75
100
125
150
Junction Temperature (°C)
Relative Light Intensity vs. Junction Temperature
110%
Relative Intensity
105%
100%
95%
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
90%
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
4
CPR3DW Rev. B
85%
80%
75%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
5
CPR3DW Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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