CREE C505UT230-S0002 Ultrathin led Datasheet

UltraThin™ LEDs
CxxxUT230-S0002
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
FEATURES
APPLICATIONS
•
Small Chip – 230 x 230 x 85 μm
•
Mobile Phone Keypads
•
UT LED Performance
•
Audio Product Display Lighting
–
5.5 mW min. (455–475 nm) Blue
•
Mobile Appliance Keypads
–
2.5 mW min. (500-510 nm) Traffic Green
•
Automotive Applications
–
2.5 mW min. (520-535 nm) Green
•
Low Forward Voltage
–
2.9–3.0 V Typical at 5 mA
•
Single Wire Bond Structure
•
Class 2 ESD Rating
CxxxUT230-S0002 Chip Diagram
.E
CPR3CD Rev
Data Sheet:
Top View
Bottom View
G•SiC LED Chip
230 x 230 μm
Die Cross Section
SiC Substrate
Bottom Surface
150 x 150 μm
Mesa (junction)
176 x 176 μm
Gold Bond Pad
105 μm Diameter
InGaN
Anode (+)
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Subject to change without notice.
www.cree.com
Cathode (-)
Maximum Ratings at TA = 25°C Notes 1&3
CxxxUT230-S0002
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460UT230-S0002
2.7
2.9
3.1
1
21
C470UT230-S0002
2.7
2.9
3.1
1
22
C505UT230-S0002
2.7
2.9
3.2
1
30
C527UT230-S0002
2.7
3.0
3.2
1
35
Mechanical Specifications
Description
CxxxUT230-S0002
Dimension
Tolerance
P-N Junction Area (μm)
176 x 176
± 25
Top Area (μm)
230 x 230
± 25
Bottom Area (Substrate) (μm)
150 x 150
± 25
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
85
± 10
105
-5, +15
1.2
± 0.5
80 x 80
± 25
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of
Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
CPR3CD Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxUT230-S0002
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT230-S0002) orders may be filled with any or all bins (CxxxUT230-0xxx) contained
in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If =
5 mA.
Radiant Flux
C460UT230-S0002
8.0 mW
C460UT230-0101
5.5 mW
455 nm
C460UT230-0102
460 nm
Dominant Wavelength
465 nm
Radiant Flux
C470UT230-S0002
8.0 mW
C470UT230-0101
5.5 mW
465 nm
C470UT230-0102
470 nm
Dominant Wavelength
475 nm
Radiant Flux
C505UT230-S0002
5.5 mW
C505UT230-0103
C505UT230-0104
C505UT230-0101
C505UT230-0102
2.5 mW
500 nm
505 nm
Dominant Wavelength
510 nm
Radiant Flux
C527UT230-S0002
5.0 mW
C527UT230-0104
C527UT230-0105
C527UT230-0106
C527UT230-0101
C527UT230-0102
C527UT230-0103
2.5 mW
520 nm
525 nm
530 nm
Dominant Wavelength
535 nm
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
CPR3CD Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the UT230 product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
12.0
30
527nm
8.0
505nm
25
470nm
4.0
Shift (nm)
If (mA)
20
15
0.0
10
-4.0
5
-8.0
0
-12.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
Vf (V)
20
25
30
If (mA)
Relative Intensity vs Forward Voltage
Relative Intensity vs. Peak Wavelength
100
140
460 nm
120
505 nm
80
527 nm
Relative Intensity (%)
% Relative Intensity
100
80
60
40
60
40
20
20
0
0
0
5
10
15
If (mA)
20
25
30
350
400
450
500
Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
CPR3CD Rev. E
550
600
650
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Similar pages