CREE C527EZ1000-0213-2 Ezbright led technology low forward voltage Datasheet

Cree® EZ1000™ Gen II LEDs
Data Sheet
CxxxEZ1000-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, and LCD backlighting.
FEATURES
APPLICATIONS
●
●
EZBright LED Technology
»
380 mW min. – 450 nm
»
360 mW min. – 460 nm
»
110 mW min. – 527 nm
General Illumination
»
Aircraft
»
Decorative Lighting
●
Lambertian Radiation
»
Task Lighting
●
Conductive Epoxy, Solder Paste or Preforms, or Flux
»
Outdoor Illumination
Eutectic Attach
●
Low Forward Voltage
●
Dielectric Passivation across Epi Surface
●
White LEDs
●
LCD Backlighting
●
Projection Displays
●
Automotive
CxxxEZ1000-Sxx000-2 Chip Diagram
Die Cross Section
Bottom View
Top View
.A
CPR3EC Rev
Data Sheet:
EZBright LED
980 x 980 μm2
Dielectric
Passivation
Cathodes (-)
150 x 150 μm2
Gold Bond Pads (2)
t = 170 μm
Backside Metalization
Subject to change without notice.
www.cree.com
Anode (+)
3 μm AuSn
1
Maximum Ratings at TA = 25°C Note 1, 2 & 3
CxxxEZ1000-Sxx000-2
DC Forward Current
1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1250 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +125°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Note 2
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ1000-Sxx000-2
2.9
3.2
3.8
2
20
C460EZ1000-Sxx000-2
2.9
3.2
3.8
2
21
C527EZ1000-Sxx000-2
3.0
3.4
4.0
2
35
Mechanical Specifications
CxxxEZ1000-Sxx000-2
Description
Dimensions
Tolerance
P-N Junction Area (μm)
950 x 950
± 35
Chip Area (μm)
980 x 980
± 35
170
± 25
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
150 x 150
± 25
3.0
± 1.5
980 x 980
± 35
3.0
± 1.5
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for
the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to
optimize product performance.
Maximum Forward Current (mA)
1200
1000
800
600
Rth j-a = 10
Rth j-a = 15
Rth j-a = 20
Rth j-a = 25
400
°C/W
°C/W
°C/W
°C/W
200
0
25
50
75
100
125
150
175
Ambient Temperature (˚C)
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
2
CPR3EC Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Standard Bins for CxxxEZ1000-Sxx000-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-0xxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ1000-S38000-2
C450EZ1000-0221-2
C450EZ1000-0222-2
C450EZ1000-0223-2
C450EZ1000-0224-2
C450EZ1000-0217-2
C450EZ1000-0218-2
C450EZ1000-0219-2
C450EZ1000-0220-2
C450EZ1000-0213-2
C450EZ1000-0214-2
C450EZ1000-0215-2
C450EZ1000-0216-2
C450EZ1000-0209-2
C450EZ1000-0210-2
C450EZ1000-0211-2
C450EZ1000-0212-2
C450EZ1000-0205-2
C450EZ1000-0206-2
C450EZ1000-0207-2
C450EZ1000-0208-2
Radiant Flux
460 mW
440 mW
420 mW
400 mW
380 mW
445 nm
447.5 nm
450 nm
452.5 nm
455 nm
Dominant Wavelength
C460EZ1000-S36000-2
C460EZ1000-0221-2
C460EZ1000-0222-2
C460EZ1000-0223-2
C460EZ1000-0224-2
C460EZ1000-0217-2
C460EZ1000-0218-2
C460EZ1000-0219-2
C460EZ1000-0220-2
C460EZ1000-0213-2
C460EZ1000-0214-2
C460EZ1000-0215-2
C460EZ1000-0216-2
C460EZ1000-0209-2
C460EZ1000-0210-2
C460EZ1000-0211-2
C460EZ1000-0212-2
C460EZ1000-0205-2
C460EZ1000-0206-2
C460EZ1000-0207-2
C460EZ1000-0208-2
C460EZ1000-0201-2
C460EZ1000-0202-2
C460EZ1000-0203-2
C460EZ1000-0204-2
Radiant Flux
460 mW
440 mW
420 mW
400 mW
380 mW
360 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
C527EZ1000-S11000-2
C527EZ1000-0213-2
C527EZ1000-0214-2
C527EZ1000-0215-2
C527EZ1000-0210-2
C527EZ1000-0211-2
C527EZ1000-0212-2
C527EZ1000-0207-2
C527EZ1000-0208-2
C527EZ1000-0209-2
C527EZ1000-0204-2
C527EZ1000-0205-2
C527EZ1000-0206-2
C527EZ1000-0201-2
C527EZ1000-0202-2
C527EZ1000-0203-2
Radiant Flux
190 mW
170 mW
150 mW
130 mW
110 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
3
CPR3EC Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Dominant Wavelength
Characteristic Curves
3
2
1
0
-1
-2
25
50
75
100
125
150
Junction Temperature (°C)
These are representative measurements for the EZBright 1000. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
300%
Relative Intensity vs. Forward Current
Relative Intensity vs. Junction Temperature
110%
105%
250%
200%
Relative Light Intensity
Relative
Intensity
Relative
Intensity
300%
250%
200%
150%
150%
100%
100%
50%
50%
0%
0%
100%
95%
90%
85%
80%
75%
70%
0
250
500
750
1000
1250
0
250
500
If (mA) 750
1000
1250
65%
25
50
If (mA)
Wavelength Shift vs. Forward Current
12
6
900
Dominant Wavelength
Shift (nm)
If (mA)
129
DW Shift
(nm)(nm)
DW Shift
96
63
30
-3
0
-6
-3
-9
-6
-12
-9
-12
0
250
500
750
1000
1250
0
250
500
If (mA) 750
1000
1250
100
125
150
Forward Current vs. Forward Voltage
Wavelength Shift vs. Junction Temperature
1000
Wavelength Shift vs. Forward Current
75
Junction Temperature (°C)
800
5
700
4
600
3
500
2
400
300
1
200
0
100
-1
0
-2 0
1
2
25
50
75
3
Vf (V) 100
4
5
125
150
Junction Temperature (°C)
If (mA)
Forward Current vs. Forward Voltage
1000
0.100
900
110%
0.000
105%
800
Relative
Light Shift
Intensity
Voltage
(V)
If (mA)
700
600
500
400
300
200
100
0
0
1
2
3
4
Vf (V)
5
Voltage Shift vs. Junction Temperature
Relative Intensity vs. Junction Temperature
-0.100
100%
95%
-0.200
90%
-0.300
85%
-0.400
80%
75%
-0.500
70%
-0.600
65% 25
25
50
50
75
100
75 Temperature
100 (°C)
Junction
125
125
150
150
Junction Temperature (°C)
Voltage Shift vs. Junction Temperature
0.100
Shift (V)
0.000 © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Copyright
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
-0.100
4
CPR3EC Rev. A
-0.200
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc.
5
CPR3EC Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
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