CREE C527UT190-0305-30 Small chip 190 x 190 x 85 single wire bond structure Datasheet

Cree® UltraThin™ Gen III LEDs
Data Sheet
CxxxUT190-Sxxxx-30
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
APPLICATIONS
•
Small Chip – 190 x 190 x 85 μm
•
Mobile Phone Keypads
•
UT LED Performance
•
Audio Product Display Lighting
–
450 & 460 nm – 14 mW min.
•
Mobile Appliance Keypads
–
470 nm – 12 mW min.
•
Automotive Applications
–
527 nm – 4.0 mW min.
•
Low Forward Voltage
–
2.9 V Typical at 5 mA
•
Single Wire Bond Structure
•
Class 2 ESD Rating
CxxxUT190-Sxxxx-30 Chip Diagram
A
CPR3EO Rev
Data Sheet:
Top View
Die Cross Section
Junction
160 x 160 μm
Anode (+)
85-μm Diameter
Bottom View
190 x 190 μm
Bottom Surface
105 x 105 μm
Cathode (-)
80 x 80 μm
t = 85 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxUT190-Sxxxx-30
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450UT190-Sxxxx-30
2.7
2.9
3.1
2
21
C460UT190-Sxxxx-30
2.7
2.9
3.1
2
21
C470UT190-Sxxxx-30
2.7
2.9
3.1
2
22
C527UT190-Sxxxx-30
2.7
3.0
3.2
2
35
Mechanical Specifications
Description
CxxxUT190-Sxxxx-30
Dimension
Tolerance
P-N Junction Area (μm)
160 x 160
± 25
Chip Top Area (μm)
190 x 190
± 25
Chip Bottom Area (μm)
105 x 105
± 25
Chip Thickness (μm)
85
± 10
Au Bond Pad Diameter (μm)
85
-10/+15
1.2
± 0.5
80 x 80
± 25
Au Bond Pad Thickness (μm)
Backside Contact Metal Area (μm)
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of
Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
2
CPR3EO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxUT190-Sxxxx-30
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT190-Sxxxx-30) orders may be filled with any or all bins (CxxxUT190-xxxx-30)
contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are
measured at If = 5 mA.
Radiant Flux
C450UT190-S1400-30
C450UT190-0317-30
C450UT190-0318-30
C450UT190-0319-30
C450UT190-0320-30
C450UT190-0313-30
C450UT190-0314-30
C450UT190-0315-30
C450UT190-0316-30
C450UT190-0309-30
C450UT190-0310-30
C450UT190-0311-30
C450UT190-0312-30
C450UT190-0305-30
C450UT190-0306-30
C450UT190-0307-30
C450UT190-0308-30
20.0 mW
18.0 mW
16.0 mW
14.0 mW
445 nm
447.5 nm
450 nm
452.5 nm
455 nm
Dominant Wavelength
Radiant Flux
C460UT190-S1400-30
C460UT190-0317-30
C460UT190-0318-30
C460UT190-0319-30
C460UT190-0320-30
C460UT190-0313-30
C460UT190-0314-30
C460UT190-0315-30
C460UT190-0316-30
C460UT190-0309-30
C460UT190-0310-30
C460UT190-0311-30
C460UT190-0312-30
C460UT190-0305-30
C460UT190-0306-30
C460UT190-0307-30
C460UT190-0308-30
20.0 mW
18.0 mW
16.0 mW
14.0 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
3
CPR3EO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxUT190-Sxxxx-30 (continued)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT190-Sxxxx-30) orders may be filled with any or all bins (CxxxUT190-xxxx-30)
contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are
measured at If = 5 mA.
Radiant Flux
C470UT190-S1200-30
C470UT190-0313-30
C470UT190-0314-30
C470UT190-0315-30
C470UT190-0316-30
C470UT190-0309-30
C470UT190-0310-30
C470UT190-0311-30
C470UT190-0312-30
C470UT190-0305-30
C470UT190-0306-30
C470UT190-0307-30
C470UT190-0308-30
C470UT190-0301-30
C470UT190-0302-30
C470UT190-0303-30
C470UT190-0304-30
18.0 mW
16.0 mW
14.0 mW
12.0 mW
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
Radiant Flux
C527UT190-S0400-30
C527UT190-0307-30
C527UT190-0308-30
C527UT190-0309-30
C527UT190-0304-30
C527UT190-0305-30
C527UT190-0306-30
C527UT190-0301-30
C527UT190-0302-30
C527UT190-0303-30
8.0 mW
6.0 mW
4.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
4
CPR3EO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light Intensity
Standard Bins for CxxxUT190-Sxxxx-30
400%
300%
200%
100%
0%
LED chips are sorted to the radiant flux and dominant wavelength
bins shown. Sorted die sheets contain die from
0
5
10
15
20
25
30
only one bin. Sorted die kit (CxxxUT190-Sxxxx-30) orders may be filled with any or all bins (CxxxUT190-xxxx-30)
contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant
wavelength values are
If (mA)
measured at If = 5 mA.
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
30
Dominant Wavelength Shift (nm)
4
25
If (mA)
20
15
10
5
2
0
-2
-4
-6
-8
-10
-12
-14
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
If (mA)
Vf (V)
Relative Intensity vs. Forward Current
Relative Light Intensity
500%
400%
300%
200%
100%
0%
0
5
10
15
20
25
30
25
30
If (mA)
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
4
2
0
-2
-4
-6
-8
-10
-12
-14
0
5
10
15
20
Copyright © 2011 Cree, Inc. All rights reserved.
If (mA)The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
5
CPR3EO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each
chip.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
6
CPR3EO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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