Siemens C62702-C747 Npn silicon af transistor (high current gain high collector current) Datasheet

NPN Silicon AF Transistor
BC 368
High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary type: BC 369 (PNP)
●
2
3
1
Type
Marking
Ordering Code
BC 368
–
C62702-C747
Pin Configuration
1
2
3
E
C
Package1)
TO-92
B
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
20
V
Collector-base voltage
VCB0
25
Emitter-base voltage
VEB0
5
Collector current
IC
1
Peak collector current
ICM
2
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TC = 90 ˚C2)
Ptot
0.8 (1)
W
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
156
Junction - case3)
Rth JC
≤
75
A
mA
Thermal Resistance
1)
2)
3)
K/W
For detailed information see chapter Package Outlines.
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 368
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA
V(BR)CE0
20
–
–
V
Collector-base breakdown voltage
IC = 10 µA
V(BR)CB0
25
–
–
Emitter-base breakdown voltage
IE = 1 µA
V(BR)EB0
5
–
–
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0
–
–
–
–
100
10
nA
µA
Emitter cutoff current
VEB = 5 V
IEB0
–
–
100
nA
DC current gain
IC = 5 mA; VCE = 10 V
IC = 500 mA; VCE = 1 V1)
IC = 1 A; VCE = 1 V1)
hFE
50
85
60
–
160
–
–
375
–
Collector-emitter saturation voltage1)
IC = 1 A; IB = 100 mA
VCEsat
–
–
0.5
Base-emitter voltage1)
IC = 5 mA; VCE = 10 V
IC = 1 A; VCE = 1 V
VBE
–
–
0.6
–
–
1
–
100
–
–
V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 20 MHz
1)
fT
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
MHz
BC 368
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA)
VCB = 25 V
Permissible pulse load RthJA = f (tp)
DC current gain hFE = f (IC)
VCE = 1 V, TA = 25 ˚C
Semiconductor Group
3
BC 368
Collector current IC = f (VBE)
VCE = 1 V
Collector-emitter saturation voltage
VCEsat = f (IC)
hFE = 10, TA = 25 ˚C
Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz
Semiconductor Group
4
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