Siemens C67078-A1401-A2 Sipmos power transistor (n channel enhancement mode fredfet) Datasheet

SIPMOS® Power Transistor
BUZ 205
● N channel
● Enhancement mode
● FREDFET
Type
VDS
ID
RDS (on)
Package 1)
Ordering Code
BUZ 205
400 V
6.0 A
1.0 Ω
TO-220 AB
C67078-A1401-A2
Maximum Ratings
Parameter
Symbol
Values
Continuous drain current, TC = 35 ˚C
ID
6.0
Pulsed drain current, TC = 25 ˚C
ID puls
24
Drain-source voltage
VDS
400
Drain-gate voltage, RGS = 20 kΩ
VDGR
400
Gate-source voltage
VGS
± 20
Power dissipation, TC = 25 ˚C
Ptot
75
W
Operating and storage temperature range
Tj , Tstg
– 55 ... + 150
˚C
Thermal resistance, chip-case
Rth JC
≤ 1.67
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55/150/56
1) See chapter Package Outlines.
Semiconductor Group
508
Unit
A
V
K/W
–
BUZ 205
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
V(BR) DSS
400
–
–
Gate threshold voltage
VGS = VDS , ID = 1 mA
VGS (th)
2.1
4.0
4.0
Zero gate voltage drain current
IDSS
VDS = 400 V, VGS = 0 V
Tj = 25 ˚C
Tj = 125 ˚C
V
µA
–
–
20
100
250
1000
IGSS
–
10
100
nA
RDS (on)
–
0.9
1.0
Ω
gfs
1.7
2.9
–
S
Ciss
–
1500
2000
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
–
120
180
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
–
35
60
td (on)
Turn-on time ton , (ton = td (on) + tr)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω t
–
30
45
–
40
60
Turn-off time toff , (toff = td (off) + tf)
td (off)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω t
f
–
110
140
–
50
65
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-source on-resistance
VGS = 10 V, ID = 4.0 A
Dynamic characteristics
Forward transconductance
VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
r
Semiconductor Group
509
ns
BUZ 205
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse diode
Continuous reverse drain current
TC = 25 ˚C
IS
–
–
6.0
Pulsed reverse drain current
TC = 25 ˚C
ISM
–
–
24
Diode forward on-voltage
VSD
–
1.3
1.6
V
trr
–
180
250
ns
Qrr
–
0.65
1.2
µC
A
IS = 12 A, VGS = 0 V
Reverse recovery time
VR = 100 V, IF = IDR , diF / dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF = IDR , diF / dt = 100 A/µs
Semiconductor Group
510
BUZ 205
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation
Typ. output characteristics
Ptot = f (TC)
ID = f (VDS)
parameter: tp = 80 µs
Safe operating area
ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Semiconductor Group
Typ. transfer characteristics
ID = f (VGS)
parameter: tp = 80 µs, VDS = 25 V
511
BUZ 205
Typ. drain-source on-resistance
RDS (on) = f (ID)
parameter: VGS
Drain-source on-resistance
RDS (on) = f (Tj)
parameter: ID = 4.0 A, VGS = 10 V, (spread)
Typ. forward transconductance
gfs = f (ID)
parameter: tp = 80 µs
Gate threshold voltage
VGS (th) = f (Tj)
parameter: VGS = VDS , ID = 1 mA, (spread)
Semiconductor Group
512
BUZ 205
Typ. capacitances
C = f (VDS)
parameter: VGS = 0 V, f = 1 MHz
Drain current
ID = f (TC)
parameter: VGS ≥ 10 V
Forward characteristics of reverse diode
IF = f (VSD)
parameter: tp = 80 µs, Tj
Transient thermal impedance
Z th JC = f (tp)
parameter: D = tp / T
Semiconductor Group
513
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