TEMPFET BTS 120 Features ● ● ● ● N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 120 100 V 19 A 0.1 Ω TO-220AB C67078-A5009-A2 2 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 100 V Drain-gate voltage, RGS = 20 kΩ VDGR 100 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 °C ID 19 ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V ID-ISO 3.5 A Pulsed drain current, TC = 25 °C ID puls 76 Short circuit current, Tj = – 55 ... + 150 °C ISC 55 Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 800 Power dissipation Ptot 75 Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Semiconductor Group W K/W Rth JC Rth JA 1 ≤ 1.67 ≤ 75 04.97 BTS 120 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = 100 V Tj = 25 °C Tj = 125 °C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C I GSS Drain-source on-state resistance VGS = 10 V, ID = 12 A RDS(on) V 100 – – 2.5 3.0 3.5 µA – – 1 100 10 300 – – 10 2 100 4 nA µA Ω – 0.09 0.1 7 13 18 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID =12 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss S pF – 1500 2000 – 450 700 – 150 240 Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t – 30 45 – 50 75 Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t – 170 220 – 80 110 r f Semiconductor Group 2 ns BTS 120 Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 19 Pulsed source current I SM – – 75 Diode forward on-voltage I F = 38 A, VGS = 0 VSD – 1.4 1.7 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V t rr – 200 – Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Q rr A V ns µC – 0.25 – – 1.4 1.5 – – 10 Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C VTS(on) Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C ITS(on) Holding current, VTS(off) = 5 V, Tj = 25 °C Tj = 150 °C IH Switching temperature VTS = 5 V TTS(on) Turn-off time VTS = 5 V, ITS(on) = 2 mA toff Semiconductor Group 3 V mA – – 10 – – 600 0.05 0.05 0.1 0.2 0.5 0.3 150 – – 0.5 – 2.5 °C µs BTS 120 Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 – Drain-source voltage VDS 15 30 – Gate-source voltage VGS 7.3 5.7 – Short-circuit current ISC 53.3 26.7 – A Short-circuit dissipation PSC 800 800 – W Response time Tj = 25 °C, before short circuit tSC(off) 25 25 – Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150°C Semiconductor Group ms Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C 4 V BTS 120 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C Semiconductor Group 5 BTS 120 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 9 A, VGS = 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA (spread) Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V Semiconductor Group 6 BTS 120 Continuous drain current ID = f (TC) Parameter: VGS ≥ 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 120 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 120 Package Outlines TO 220 AB Standard 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-A5009-A2 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 9