BUZ 41 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 36 °C Values Unit A 4.5 IDpuls Pulsed drain current TC = 25 °C 18 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 8 mJ EAS ID = 4.5 A, VDD = 50 V, RGS = 25 Ω L = 28.4 mH, Tj = 25 °C 320 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 41 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 500 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 500 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 500 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 3 A Semiconductor Group nA - 2 1.3 1.5 07/96 BUZ 41 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 3 A Input capacitance 2.5 pF - 850 1300 - 100 150 - 40 60 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 4.3 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Rise time - 15 20 - 50 70 - 140 190 - 50 70 tr VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 41 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 18 V 1 1.2 trr ns - 350 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4.5 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 9 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 3 - 07/96 BUZ 41 A Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 5.0 80 A W Ptot ID 4.0 60 3.5 50 3.0 40 2.5 2.0 30 1.5 20 1.0 10 0.5 0.0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 K/W A t = 20.0µs p ID ZthJC 10 0 10 1 DS /I D 100 µs 10 -1 =V 1 ms DS (o n) D = 0.50 0.20 R 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse 10 DC -1 10 0 10 1 10 2 V 10 10 3 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 41 A Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs l 10 k j i hg f Ptot = 75W 5.0 e Ω A a d ID VGS [V] a 4.0 8 7 6 c 5 4 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 b 3.5 3.0 2.5 d 2.0 e f h g ji k 1.5 l 20.0 2 1.0 1 0 0 c RDS (on) 4.0 k 10.0 3 b VGS [V] = 0.5 a a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 4 8 12 16 20 24 28 32 V 38 0 1 2 3 4 5 6 7 VDS 8 A 10 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 8.0 7.5 A S 6.5 ID 6.0 gfs 5.5 6.0 5.0 5.0 4.5 4.0 4.0 3.5 3.0 3.0 2.5 2.0 2.0 1.5 1.0 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.0 1.0 2.0 3.0 4.0 5.0 A ID 07/96 7.0 BUZ 41 A Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3 A, VGS = 10 V 6.0 4.6 Ω V 98% 4.0 5.0 RDS (on) VGS(th) 3.6 4.5 typ 3.2 4.0 2.8 3.5 2.4 3.0 2% 2.0 2.5 98% typ 2.0 1.6 1.2 1.5 1.0 0.8 0.5 0.4 0.0 -60 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Coss Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 41 A Avalanche energy EAS = ƒ(Tj ) parameter: ID = 4.5 A, VDD = 50 V RGS = 25 Ω, L = 28.4 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 7 A 340 16 mJ V EAS 280 VGS 12 240 10 200 0,2 VDS max 8 160 6 120 80 4 40 2 0 20 0,8 VDS max 0 40 60 80 100 120 °C 160 Tj 0 10 20 30 40 50 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 600 V 580 V(BR)DSS570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 65 BUZ 41 A Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96