BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 12 A 50 V 42 A 0.035 Ω TO-220 AB C67078-S1331-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 44 °C Values Unit A 42 IDpuls Pulsed drain current TC = 25 °C 168 Avalanche current,limited by Tjmax IAR 42 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 2.5 mJ EAS ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 23.2 µH, Tj = 25 °C 41 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤1 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 12 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 50 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 32 A Semiconductor Group nA - 2 0.03 0.035 07/96 BUZ 12 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 32 A Input capacitance 12 pF - 1700 2300 - 800 1200 - 280 420 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 23 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 35 50 - 85 130 - 220 280 - 140 180 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 12 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 168 V 1.8 2.2 trr ns - 80 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 42 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 84 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.14 - 07/96 BUZ 12 A Not for new design Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 45 130 W A 110 Ptot ID 100 90 35 30 80 25 70 60 20 50 15 40 10 30 20 5 10 0 0 0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 1 K/W A 10 0 ID ZthJC t = 47.0µs p /ID 10 2 = VD 100 µs S 10 -1 ) on S( RD 1 ms 10 -2 D = 0.50 0.20 10 10 ms 1 10 -3 0.10 0.05 10 -4 0.02 single pulse 0.01 DC 10 0 0 10 10 1 V 10 10 -5 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 12 A Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 100 0.11 Ptot = 125W k j i VGS [V] 4.0 70 b 4.5 c 5.0 d 5.5 e 6.0 f f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 g 60 50 e 40 b c d e f g 0.09 RDS (on) h a 80 0.08 0.07 0.06 0.05 h 0.04 i j d k 10.0 30 0.03 l 20.0 c 20 VGS [V] = 0.01 a 0 1.0 2.0 3.0 4.0 5.0 k 0.02 b 10 0.0 a Ω l A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.00 V 7.0 0 10 20 30 40 50 60 70 VDS A 90 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 60 30 A S 50 ID gfs 45 24 22 40 20 35 18 16 30 14 25 12 20 10 15 8 6 10 4 5 0 0 2 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0 10 20 30 40 50 A ID 07/96 65 BUZ 12 A Not for new design Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 32 A, VGS = 10 V 0.09 4.6 V Ω 98% 4.0 VGS(th) RDS (on)0.07 3.6 typ 3.2 0.06 2.8 0.05 2.4 98% 0.04 2% 2.0 typ 1.6 0.03 1.2 0.02 0.8 0.01 0.4 0.00 0.0 -60 -20 20 60 100 °C -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 nF A C IF Ciss 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 12 A Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 42 A, VDD = 25 V RGS = 25 Ω, L = 23.2 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 45 16 mJ EAS V VGS 35 12 30 0,2 VDS max 10 0,8 VDS max 25 8 20 6 15 4 10 2 5 0 20 0 40 60 80 100 120 °C 160 Tj 0 10 20 30 40 50 60 70 80 nC 100 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 12 A Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96