BUZ 102AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 102AL 50 V 42 A 0.028 Ω TO-220 AB C67078-S1356-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 97 °C Values Unit A 42 IDpuls Pulsed drain current TC = 25 °C 168 EAS Avalanche energy, single pulse mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 102 µH, Tj = 25 °C 180 Reverse diode dv/dt dv/dt kV/µs IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TC = 25 °C Semiconductor Group V W 200 1 07/96 BUZ 102AL Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 0.83 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = -40 °C V 50 - - 1.2 1.6 2 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 µA VDS = 50 V, VGS = 0 V, Tj = -40 °C - 1 100 nA VDS = 50 V, VGS = 0 V, Tj = 150 °C - 10 100 µA Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 21 A Semiconductor Group nA - 2 0.02 0.028 07/96 BUZ 102AL Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 21 A Input capacitance 10 pF - 1750 2330 - 550 825 - 240 360 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 35 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 30 45 - 135 205 - 330 440 - 110 150 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 102AL Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 168 V 1.2 1.7 trr ns - 85 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 42 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 84 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 120 - 07/96 BUZ 102AL Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V Power dissipation Ptot = ƒ(TC) 45 220 W Ptot A 180 ID 35 160 30 140 25 120 100 20 80 15 60 10 40 5 20 0 0 0 20 40 60 80 100 120 140 °C 0 180 20 40 60 80 100 120 140 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 180 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 0 A K/W ID ZthJC t = 30.0µs p /ID 10 2 = VD S 10 -1 100 µs ) on S( D R 1 ms D = 0.50 0.20 10 1 10 ms 10 -2 0.10 0.05 0.02 DC 0.01 single pulse 10 0 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 102AL Typ. output characteristics ID = ƒ(VDS) Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 21 A, VGS = 5 V parameter: tp = 80 µs 100 0.080 Ptot = 200W kl j i h g A Ω f VGS [V] ID 80 a 2.0 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 d h 5.5 70 e 60 50 40 30 c i 6.0 j 7.0 k 8.0 l 10.0 RDS (on) 0.060 0.050 0.040 98% 0.030 typ 0.020 20 10 0.010 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.000 -60 5.0 VDS 20 60 100 °C 180 Tj Typ. forward transconductance gfs = f (ID) Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 45 50 S A ID -20 gfs 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V 10 VGS 6 0 5 10 15 20 25 30 35 A ID 07/96 45 BUZ 102AL Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.09 4.6 a Ω b c d e V 4.0 RDS (on)0.07 VGS(th) 3.6 3.2 0.06 2.8 0.05 2.4 98% 0.04 2.0 typ 0.03 1.6 f 2% g h k j i 0.02 1.2 0.8 VGS [V] = 0.01 a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0 0.4 0.00 0 10 20 30 40 50 60 70 80 A 0.0 -60 100 -20 20 60 100 °C ID 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 pF A IF C Ciss 10 3 10 2 Coss Crss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 102AL Avalanche energy EAS = ƒ(Tj ) parameter: ID = 42 A, VDD = 25 V RGS = 25 Ω, L = 102 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 190 16 mJ V 160 EAS VGS 140 120 12 10 100 8 0,2 VDS max 0,8 VDS max 80 6 60 4 40 2 20 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 20 40 60 80 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 07/96 110 BUZ 102AL Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96