BUZ 312 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 33 °C Values Unit A 6 IDpuls Pulsed drain current TC = 25 °C 24 Avalanche current,limited by Tjmax IAR 6 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 17 mJ EAS ID = 6 A, VDD = 50 V, RGS = 25 Ω L = 43.8 mH, Tj = 25 °C 830 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 150 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.83 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 312 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 1000 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 1000 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 4 A Semiconductor Group nA - 2 1.3 1.5 07/96 BUZ 312 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 4 A Input capacitance 2.5 pF - 1950 2600 - 190 285 - 110 170 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 6.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Rise time - 25 40 - 125 190 - 480 640 - 155 210 tr VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 312 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 24 V 0.9 1.4 trr µs - 0.5 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 6 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 12 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 6.5 - 07/96 BUZ 312 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 6.5 160 A W Ptot 5.5 ID 5.0 120 4.5 4.0 100 3.5 80 3.0 2.5 60 2.0 40 1.5 1.0 20 0.5 0 0 0.0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 0 A K/W t = 1000.0ns p ID ZthJC 10 µs 10 1 10 -1 /I D 100 µs DS 1 ms 0.20 10 ms 10 R 10 0 DS (on ) =V D = 0.50 -2 0.10 0.05 0.02 single pulse 0.01 10 -1 0 10 DC 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 312 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 14 5.0 Ptot = 150W l A k ih f j g Ω e 12 ID VGS [V] d a 4.0 11 10 9 8 c 7 6 5 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 b c RDS (on) 4.0 3.5 3.0 2.5 d 2.0 e f h g j i k 1.5 b k 10.0 4 a l 20.0 3 1.0 2 1 0 0 VGS [V] = 0.5 a a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 10 20 30 40 V 55 0 2 4 6 8 10 VDS A 13 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 10 12 A ID S 8 gfs 7 8 6 5 6 4 4 3 2 2 1 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 A ID 07/96 8.0 BUZ 312 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 4 A, VGS = 10 V 4.6 7.5 Ω V 6.5 4.0 VGS(th) RDS (on) 6.0 5.5 98% 3.6 typ 3.2 5.0 4.5 2.8 4.0 2.4 3.5 2% 2.0 3.0 1.6 98% typ 2.5 2.0 1.2 1.5 0.8 1.0 0.4 0.5 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A C IF Ciss 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 312 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 6 A, VDD = 50 V RGS = 25 Ω, L = 43.8 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 9 A 900 16 mJ EAS V VGS 700 12 600 10 500 0,2 VDS max 8 0,8 VDS max 400 6 300 4 200 2 100 0 20 0 40 60 80 100 120 °C 160 Tj 0 40 80 120 160 200 240 280 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 1200 V 1160 V(BR)DSS 1140 1120 1100 1080 1060 1040 1020 1000 980 960 940 920 900 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 360 BUZ 312 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96