Intersil CA3045 General purpose npn transistor array Datasheet

CA3045, CA3046
Data Sheet
September 1998
File Number
341.4
General Purpose NPN Transistor Arrays
Features
The CA3045 and CA3046 each consist of five general
purpose silicon NPN transistors on a common monolithic
substrate. Two of the transistors are internally connected to
form a differentially connected pair.
• Two Matched Transistors
- VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
- IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max)
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
The transistors of the CA3045 and CA3046 are well suited to
a wide variety of applications in low power systems in the DC
through VHF range. They may be used as discrete
transistors in conventional circuits. However, in addition, they
provide the very significant inherent integrated circuit
advantages of close electrical and thermal matching.
• 5 General Purpose Monolithic Transistors
Ordering Information
Applications
PART NUMBER
(BRAND)
TEMP.
RANGE (oC)
PKG.
NO.
PACKAGE
CA3045F
-55 to 125
14 Ld CERDIP
F14.3
CA3046
-55 to 125
14 Ld PDIP
E14.3
CA3046M
(3046)
-55 to 125
14 Ld SOIC
M14.15
CA3046M96
(3046)
-55 to 125
14 Ld SOIC Tape
and Reel
M14.15
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range
• Three Isolated Transistors and One Differentially
Connected Transistor Pair for Low Power Applications at
Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018
Integrated-Circuit Transistor Array” for Suggested
Applications
Pinout
CA3045, (CERDIP)
CA3046 (PDIP, SOIC)
TOP VIEW
14
1
2
DIFFERENTIAL
PAIR
Q1
Q5
12
3
4
Q2
5
11
Q4
10
9
6
7
13 SUBSTRATE
Q3
1
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CA3045, CA3046
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (VCIO, Note 1) . . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
180
N/A
CERDIP Package. . . . . . . . . . . . . . . . .
150
75
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages). . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
TA = 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)CIO
IC = 10µA, ICI = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
7
-
V
Collector Cutoff Current (Figure 1)
ICBO
VCB = 10V, IE = 0
-
0.002
40
nA
Collector Cutoff Current (Figure 2)
ICEO
VCE = 10V, IB = 0
-
See Fig. 2
0.5
µA
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
hFE
VCE = 3V
IC = 10mA
-
100
-
-
IC = 1mA
40
100
-
-
IC = 10µA
-
54
-
-
VCE = 3V, IC = 1mA
-
0.3
2
µA
VCE = 3V
IE = 1mA
-
0.715
-
V
IE = 10mA
-
0.800
-
V
Input Offset Current for Matched Pair Q1 and Q2.
|IIO1 - IIO2| (Note 3) (Figure 4)
Base-to-Emitter Voltage (Note 3) (Figure 5)
VBE
Magnitude of Input Offet Voltage for Differential Pair
|VBE1 - VBE2| (Note 3) (Figures 5, 7)
VCE = 3V, IC = 1mA
-
0.45
5
mV
Magnitude of Input Offset Voltage for Isolated
Transistors |VBE3 - VBE4|, |VBE4 - VBE5|,
|VBE5 - VBE3| (Note 3) (Figures 5, 7)
VCE = 3V, IC = 1mA
-
0.45
5
mV
VCE = 3V, IC = 1mA
-
-1.9
-
mV/oC
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
∆V BE
--------------∆T
Collector-to-Emitter Saturation Voltage
VCES
IB = 1mA, IC = 10mA
-
0.23
-
V
∆V IO
---------------∆T
VCE = 3V, IC = 1mA
-
1.1
-
µV/oC
dB
Temperature Coefficient: Magnitude of Input Offset Voltage (Figure 7)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9)
NF
f = 1kHz, VCE = 3V, IC = 100µA,
Source Resistance = 1kΩ
-
3.25
-
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio (Figure 11)
hFE
f = 1kHz, VCE = 3V, IC = 1mA
-
110
-
-
Short Circuit Input Impedance (Figure 11)
hIE
f = 1kHz, VCE = 3V, IC = 1mA
-
3.5
-
kΩ
2
CA3045, CA3046
TA = 25oC, characteristics apply for each transistor in CA3045 and CA3046 as specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Open Circuit Output Impedance (Figure 11)
hOE
f = 1kHz, VCE = 3V, IC = 1mA
-
15.6
-
µS
Open Circuit Reverse Voltage Transfer Ratio
(Figure 11)
hRE
f = 1kHz, VCE = 3V, IC = 1mA
-
1.8 x 10-4
-
-
Forward Transfer Admittance (Figure 12)
YFE
f = 1kHz, VCE = 3V, IC = 1mA
-
31 - j1.5
-
-
Input Admittance (Figure 13)
YIE
f = 1kHz, VCE = 3V, IC = 1mA
-
0.3 + j0.04
-
-
Output Admittance (Figure 14)
YOE
f = 1kHz, VCE = 3V, IC = 1mA
-
0.001 + j0.03
-
-
Reverse Transfer Admittance (Figure 15)
YRE
f = 1kHz, VCE = 3V, IC = 1mA
-
See Fig. 14
-
-
Admittance Characteristics
Gain Bandwidth Product (Figure 16)
300
550
-
MHz
Emitter-to-Base Capacitance
CEB
fT
VCE = 3V, IC = 3mA
VEB = 3V, IE = 0
-
0.6
-
pF
Collector-to-Base Capacitance
CCB
VCB = 3V, IC = 0
-
0.58
-
pF
Collector-to-Substrate Capacitance
CCI
VCS = 3V, IC = 0
-
2.8
-
pF
NOTE:
3. Actual forcing current is via the emitter for this test.
Typical Performance Curves
103
IE = 0
COLLECTOR CUTOFF CURRENT (nA)
COLLECTOR CUTOFF CURRENT (nA)
102
10
VCB = 15V
VCB = 10V
VCB = 5V
1
10-1
10-2
10-3
10-4
102
VCE = 10V
10
VCE = 5V
1
10-1
10-2
10-3
0
25
50
75
TEMPERATURE (oC)
100
120
0
125
FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT
vs TEMPERATURE FOR EACH TRANSISTOR
1.1
10
1.0
100
90
h FE2
------------- OR ------------h FE1
80
h FE2
h FE1
0.9
70
60
50
0.01
0.8
0.1
1.0
10
EMITTER CURRENT (mA)
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR Q1 AND Q2 vs
EMITTER CURRENT
3
INPUT OFFSET CURRENT (µA)
hFE
BETA RATIO
110
TA = 25oC
25
50
75
TEMPERATURE (oC)
100
125
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
VCE = 3V
STATIC FORWARD CURRENT
TRANSFER RATIO (hFE)
IB = 0
VCE = 3V
TA = 25oC
1.0
0.1
0.01
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q1Q2 vs
COLLECTOR CURRENT
10
CA3045, CA3046
Typical Performance Curves
VCE = 3V
TA = 25oC
VCE = 3V
0.7
3
VBE
2
0.6
1
0.5
INPUT OFFSET VOLTAGE
0
0.4
0.01
0.1
1.0
BASE-TO-EMITTER VOLTAGE (V)
1.0
INPUT OFFSET VOLTAGE (mV)
BASE-TO-EMITTER VOLTAGE (V)
0.8
(Continued)
0.9
0.8
0.7
IE = 3mA
0.6
IE = 1mA
IE = 0.5mA
0.5
0.4
-75
10
-50
-25
EMITTER CURRENT (mA)
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE
CHARACTERISTICS AND INPUT OFFSET VOLTAGE
FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED
TRANSISTORS vs EMITTER CURRENT
4.00
125
20
IE = 10mA
VCE = 3V
RS = 500Ω
TA = 25oC
3.00
f = 0.1kHz
NOISE FIGURE (dB)
INPUT OFFSET VOLTAGE (mV)
100
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC vs TEMPERATURE FOR EACH
TRANSISTOR
VCE = 3V
2.00
0.75
IE = 1mA
0.50
IE = 0.1mA
0.25
-75
-50
-25
0
25
50
75
TEMPERATURE (oC)
100
125
FIGURE7. TYPICALINPUTOFFSETVOLTAGECHARACTERISTICS
FOR DIFFERENTIAL PAIR AND PAIRED
ISOLATED TRANSISTORS vs TEMPERATURE
f = 1kHz
10
f = 10kHz
5
0.1
COLLECTOR CURRENT (mA)
1.0
FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
30
VCE = 3V
RS = 1000Ω
TA = 25oC
25
NOISE FIGURE (dB)
20
15
0
0.01
0
NOISE FIGURE (dB)
0
25
50
75
TEMPERATURE (oC)
15
f = 0.1kHz
f = 1kHz
10
f = 10kHz
5
VCE = 3V
RS = 10000Ω
TA = 25oC
20
f = 0.1kHz
15
f = 1kHz
10
f = 10kHz
5
0
0
0.01
0.1
COLLECTOR CURRENT (mA)
1
FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
4
0.01
0.1
COLLECTOR CURRENT (mA)
1
FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
CA3045, CA3046
Typical Performance Curves
VCE = 3V
f = 1kHz
TA = 25oC
hFE = 110
hIE = 3.5kΩ
hRE = 1.88 x 10-4
hOE = 15.6µS
hIE
10
hRE
hOE
AT
1mA
hFE
1.0
hRE
hIE
0.1
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
FORWARD TRANSFER CONDUCTANCE (gFE)
OR SUSCEPTANCE (bFE) (mS)
NORMALIZED h PARAMETERS
100
(Continued)
COMMON EMITTER CIRCUIT, BASE INPUT
30
10
0
-20
0.1
6
4
3
bIE
2
1
gIE
10
FREQUENCY (MHz)
100
REVERSE TRANSFER CONDUCTANCE (gRE)
OR SUSCEPTANCE (bRE) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
gRE IS SMALL AT FREQUENCIES
LESS THAN 500MHz
bRE
-0.5
5
4
bOE
3
2
1
1
10
100
FREQUENCY (MHz)
FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY
0
100
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
0
0.1
-1.0
-1.5
FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY
GAIN BANDWIDTH PRODUCT (MHz)
1
10
FREQUENCY (MHz)
gOE
0
0.1
1
FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs
FREQUENCY
OUTPUT CONDUCTANCE (gOE)
OR SUSCEPTANCE (bOE) (mS)
INPUT CONDUCTANCE (gIE)
OR SUSCEPTANCE (bIE) (mS)
5
bFE
-10
6
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
gFE
20
10
FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT
TRANSFER RATIO, SHORT CIRCUIT INPUT
IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE,
AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER
RATIO vs COLLECTOR CURRENT
TA = 25oC, VCE = 3V, IC = 1mA
40
VCE = 3V
TA = 25oC
1000
900
800
700
600
500
400
300
200
100
-2.0
1
10
FREQUENCY (MHz)
100
FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs
FREQUENCY
5
0
1
2
3
4 5 6 7 8 9 10 11
COLLECTOR CURRENT (mA)
12 13 14
FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
CA3045, CA3046
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