CATALYST CAT33C704

Preliminary
CAT33C704
4K-Bit Secure Access Serial E2PROM
FEATURES
■ Single 3V Supply
■ Low Power Consumption:
Active: 3 mA
Standby: 250 µA
■ Password READ/WRITE Protection: 1 to 8 Bytes
■ Memory Pointer WRITE Protection
■ 100,000 Program/Erase Cycles
■ Sequential READ Operation
■ 100 Year Data Retention
■ 256 x16 or 512 x 8 Selectable Serial Memory
■ Commercial, Industrial and Automotive
■ High Speed Synchronous Protocol
Temperature Ranges
■ Operating Frequency: DC–1MHz
DESCRIPTION
The CAT33C704 is a 4K-bit Serial E2PROM that safeguards stored data from unauthorized access by use of
a user selectable (1 to 8 byte) access code and a
movable memory pointer. Two operating modes provide
unprotected and password-protected operation allowing the user to configure the device as anything from a
ROM to a fully protected no-access memory. The
CAT33C704 uses a unique serial-byte synchronous
communication protocol and has a Sequential Read
feature where data can be sequentially clocked out of
the memory array. The device is available in 8-pin DIP
or 16-pin SOIC packages.
PIN CONFIGURATION
BLOCK DIAGRAM
DIP Package (P)
1
2
3
4
CS
CLK
DI
DO
8
7
6
5
SOIC Package (J)
VCC
PE
ERR
GND
NC
NC
CS
CLK
DI
DO
NC
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
NC
VCC
PE
ERR
GND
NC
NC
VCC
GND
DO
CLK
PE
CS
DI
64-BIT ACCESS CODE
&
CONTROL BLOCK
SERIAL
COMMUNICATION
BLOCK
5074 FHD F01
PIN FUNCTIONS
Pin Name
R/W
BUFFER
Function
CS
Chip Select
DO(1)
Serial Data Output
CLK
Clock Input
DI(1)
Serial Data Input
PE
Parity Enable
ERR
Error Indication Pin
VCC
+3V Power Supply
GND
Ground
4K-BIT EEPROM
ARRAY
ADDRESS
DECODER
INSTRUCTION
REGISTER
ERR
INSTRUCTION
DECODER
STATUS
REGISTER
ADDRESS
REGISTER
MEMORY
POINTER
33C704 F02
Note:
(1) DI, DO may be tied together to form a common I/O.
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 25046-00 2/98
1
Preliminary
CAT33C704
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100mA
RELIABILITY CHARACTERISTICS
Symbol
NEND(3)
TDR
(3)
VZAP(3)
ILTH
(3)(4)
Parameter
Units
Reference Test Method
100,000
Cycles/Byte
MIL-STD-883, Test Method 1033
Data Retention
100
Years
MIL-STD-883, Test Method 1008
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
Latch-up
100
mA
Endurance
Min.
Max.
JEDEC Standard 17
D.C. CHARACTERISTICS
VCC = +3V ±10%,unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC
Power Supply Current
(Operating)
3
mA
VCC = 3.3V, CS = VCC
DO is Unloaded.
ISB
Power Supply Current
(Standby)
250
µA
VCC = 3.3V, CS = 0V
DI = 0V, CLK = 0V
VIL
Input Low Voltage
–0.1
0.8
V
VIH
Input High Voltage
2
VOL
Output Low Voltage
VOH
Output High Voltage
ILI(5)
Input Leakage Current
ILO
Output Leakage Current
V
0.4
V
IOL = 2.1mA
V
IOH = –400µA
2
µA
VIN = 3.3V
10
µA
VOUT = 3.3V, CS = 0V
2.4
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) PE pin test conditions: VIH < VIN < VIL
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Preliminary
CAT33C704
A.C. CHARACTERISTICS
VCC = +3V ±10%,unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
tCSS
CS Setup Time
150
ns
tCSH
CS Hold Time
0
ns
CL = 100pF
tDIS
DI Setup Time
50
ns
VIN = VIH or VIL
tDIH
DI Hold Time
0
ns
VOUT = VOH or VOL
tPD
CLK to DO Delay
150
ns
tHZ(1) (2)
CLK to DO High-Z Delay
50
ns
tEW
Program/Erase Pulse Width
12
ms
tCSL
CS Low Pulse Width
300
ns
tCKH
CLK High Pulse Width
300
ns
tCKL
CLK Low Pulse Width
140
ns
tSV
ERR Output Delay
tVCCS(1)
VCC to CS Setup Time
tCSZ(1)
CS to DO High-Z Delay
50
ns
tCSD
CS to DO Busy Delay
150
ns
fCLK
Frequency
1
MHz
150
5
DC
ns
CL = 100pF
µs
CL = 100pF
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) tHZ is measured from the falling edge of the clock to the time when the output is no longer driven.
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Preliminary
CAT33C704
divided into a read-only area and a non-access area.
Figure 2 illlustrates this partitioning of the memory array.
PASSWORD PROTECTION
The CAT33C704 is a 4K-bit E2PROM that features a
password protection scheme to prevent unauthorized
access to the information stored in the device. It contains
an access code register which stores one to eight bytes
of access code along with the length of that access code.
Additionally, a memory pointer register stores the address that partitions the memory into protected and
unprotected areas. As shipped from the factory, the
device is unprogrammed and unprotected. The length of
the access code is equal to zero and the memory pointer
register points to location zero. Every byte of the device
is fully accessible without an access code. Setting a
password and moving the memory pointer register to
cover all or part of the memory secures the device. Once
secured, the memory is divided into a read/write area
and a read-only area with the entry of a valid access
code. If no access code is entered, the memory is
WRITE PROTECTION
Another feature of the CAT33C704 is WRITE-protection
without the use of an access code. If the memory pointer
register is set to cover all or part of the memory, without
setting the access code register, the device may be
divided into an area which allows full access, and an
area which allows READ-only access. To write into the
READ-only area, the user can override the memory
pointer register for every WRITE instruction or he can
simply move the address in the memory pointer register
to uncover this area, and then write into the memory.
This mechanism prevents inadvertent overwriting of
important data in the memory without the use of an
access code. Figure 3 illustrates this partitioning of the
memory array.
Figure 1. A.C. Timing
VCC
tVCCS
CS
tCSS
tCKH
tCKL
tCSH
CLK
tDIH
tDIS
tHZ
DI
tPD
tPD
HIGH-Z
HIGH-Z
DO
5074 FHD F03
Figure 2. Secure Mode
ACCESS REGISTER:
ACCESS CODE LENGTH:
MEMORY POINTER:
ACCESS CODE (1–8 BYTES)
1 TO 8
a…a
255 (x16)
511 (x8)
READ-ONLY
ACCESS
POINTER
REGISTER
ADDRESS
IN MEMORY
a…a
PASSWORD-ONLY
ACCESS
0
5074 FHD F04
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4
Preliminary
CAT33C704
READ SEQUENTIAL
PIN DESCRIPTIONS
To allow for convenient reading of blocks of contiguous
data, the device has a READ SEQUENTIAL instruction
which accepts a starting address of the block and
continuously outputs data of subsequent addresses
until the end of memory, or until Chip Select goes LOW.
CS
Chip Select is a TTL compatible input which, when set
HIGH, allows normal operation of the device. Any time
Chip Select is set LOW, it resets the device, terminating
all I/O communication, and puts the output in a high
impedance state. CS is used to reset the device if an
error condition exists or to put the device in a powerdown mode to minimize power consumption. It may also
be used to frame data transmission in applications
where the clock and data input have to be ignored from
time to time. Although CS resets the device, it does not
change the program/erase or the access-enable status,
nor does it terminate a programming cycle once it has
started. The program/erase and access-enable operations, once enabled, will remain enabled until specific
disabling instructions are sent or until power is removed.
The CAT33C704 communicates with external devices
via a synchronous serial communication protocol (SECS)
that has a maximum transmission rate of 1 MHz. The
data transmission may be a continuous stream of data
or it can be packed by pulsing Chip Select LOW in
between each packet of information. (Except for the
SEQUENTIAL READ instruction where Chip Select
must be held high).
Figure 3. Unprotected Mode(1)
ACCESS REGISTER:
ACCESS CODE LENGTH:
MEMORY POINTER:
x…x
0
a…a
255 (x16)
511 (x8)
READ/WRITE/ERASE
ACCESS
POINTER
REGISTER
ADDRESS
IN MEMORY
a…a
READ-ONLY
ACCESS
0
5074 FHD F05
Figure 4. ERR Pin Timing
CS
CLK
HIGH-Z
tSV
tSV
ERR
5074 FHD F06
Note:
(1) x = DON’T CARE; a = ADDRESS BIT.
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Preliminary
CAT33C704
CLK
DO
The System Clock is a TTL compatible input pin that
allows operation of the device over a frequency range of
DC to 1 MHz.
The Data Output pin is a tri-state TTL compatible output.
It is normally in a high impedance state unless a READ
or an ENABLE BUSY instruction is executed. Following
the completion of a 16-bit or 8-bit data stream, the output
will return to the high impedance state. During a program/erase cycle, if the ENABLE BUSY instruction has
been previously executed, the output will stay LOW
while the device is BUSY, and it will be set HIGH when
the program/erase cycle is completed. DO will stay
HIGH until the completion of the next instruction’s opcode and, if the next instruction is a READ, DO will output
the appropriate data at the end of the instruction. If the
ENABLE BUSY instruction has not been previously
executed, DO will stay in a high impedance state. DO will
DI
The Data Input pin is TTL compatible and accepts data
and instructions in a serial format. Each instruction must
begin with “1” as a start bit. The device will accept as
many bytes as an instruction requires, including both
data and address bytes. With the SECS protocol, extra
bits will be disregarded if they are “0”s and misinterpreted as the next instruction if they are “1”s. An instruction error will cause the device to abort operation and all
I/O communication will be terminated until a reset is
received.
Figure 5. Program/Erase Timing
CS
tCKH
CLK
NEXT INSTRUCTION
DI
LAST ADDRESS BIT FOR ERASE
LAST OPCODE BIT FOR ERAL
LAST DATA BIT FOR WRITE/WRAL
tEW
tPD
HIGH-Z
DO
5074 FHD F07
Figure 6. CS to DO Status Timing
CS
CLK
NEXT INSTRUCTION
DI
LAST ADDRESS BIT FOR ERASE
LAST OPCODE BIT FOR ERAL
LAST DATA BIT FOR WRITE/WRAL
tCSZ
tCSD
READY
DO
HIGH-Z
BUSY
HIGH-Z
BUSY
5074 FHD F08
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6
Preliminary
CAT33C704
also go to the high impedance state if an error condition
is detected. If the ENABLE BUSY instruction has not
been executed, to determine whether the device is in a
program/erase cycle or in an error condition, a READ
STATUS instruction may be entered. When the device
is in a program/erase cycle it will output an 8-bit status
word. If it does not, it is in an error condition.
use no parity. In this case, instructions or data that
include parity bits will not be interpreted correctly. Note:
The PE input is internally pulled down to GND (i.e.
default = no parity). As with all CMOS devices, CS, CLK
and DI inputs must be connected to either HIGH or LOW,
and not left floating.
PE
The Error indication pin is an open drain output. If either
an instruction or parity error exists, the ERR pin will
output a “0” until the device is reset. This can be done by
pulsing CS LOW.
ERR
The Parity Enable pin is a TTL compatible input. If the PE
pin is set HIGH, the device will be configured to communicate using even parity, and if the pin is set LOW, it will
Figure 7. Read Timing
VCC
CS
CLK
tPD
tHZ
DI
OP7
OP0
OP CODE
AN
A0
ADDRESS
DN
HIGH-Z
D0
DO
DATA
5074 FHD F10
Figure 8. Write Timing
CS
DON’T CARE
CLK
tEW
tSV
DI
OP7
OP0
OP CODE
AN
A0
ADDRESS
DN
D0
DATA
READY
DO
BUSY
5074 FHD F11
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Preliminary
CAT33C704
Seven instructions are used as control and status functions:
DEVICE OPERATION
INSTRUCTIONS
DISBSY
ENBSY
EWEN
EWDS
NOP
ORG
RSR
The CAT33C704 instruction set includes 19 instructions.
Six instructions are related to security or write protection:
DISAC
ENAC
MACC
OVMPR
RMPR
WMPR
Disable Access
Enable Access
Modify Access Code
Override Memory Pointer Register
Read Memory Pointer Register
Write Memory Pointer Register
UNPROTECTED MODE
As shipped from the factory, the CAT33C704 is in the
unprotected mode. The access code length is set to 0,
and the memory pointer is at address 00 hex. While in
this mode, any portion of the E2PROM array can be read
or written to without an access code. A portion of the
memory may be protected from any write or clear
operation by setting the memory pointer to the appropriate address via the WMPR (Write Memory Pointer
Register) instruction:
Six instructions are READ/WRITE/ERASE instructions:
ERAL
ERASE
READ
RSEQ
WRAL
WRITE
Disable Busy
Enable Busy
Program/Erase Enable
Program/Erase Disable
No Operations
Select Memory Organization
Read Status Register
Clear All Locations
Clear Memory Locations
Read Memory
Read Sequentially
Write All
Write memory
WMPR
[address]
Note: All write instructions will automatically perform a clear before
writing data.
Figure 9. EWEN/EWDS Timing
CS
CLK
DI
OP7
OP0
OP CODE
HIGH-Z
DO
5074 FHD F12
Figure 10. Erase Timing
CS
DON’T CARE
CLK
tEW
tSV
DI
OP7
OP0
OP CODE
AN
A0
ADDRESS
READY
HIGH-Z
DO
BUSY
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8
5074 FHD F13
Preliminary
CAT33C704
As shown previously in Figure 3, memory locations
below the address set in the memory pointer will be
program/erase protected. Thus, unintentional clearing
or writing of data in this area will be prevented, while
memory locations at or above the protected area still
allow full access. This protection does not apply to the
ERAL and WRAL commands which are not blocked by
the memory pointer.
The ENAC instruction, along with the access code,
enables access to the protected area of the device. The
EWEN instruction enables execution of the program/
erase operations. This portion of the memory is otherwise inaccessible for any operation. Read-only access
is allowed without the access code for memory locations
at or above the address in the memory pointer.
The access code can be changed by the following
instruction:
SECURE MODE
As shown previously in Figure 2, in the secure mode,
memory locations at or above the address set in the
memory pointer allow READ-only access. Memory locations below that address will require an access code
before they can be accessed. The secure mode is
activated with an MACC (Modify Access Code) instruction followed by a user access code which can be one to
eight bytes in length.
EWEN
MACC
ENAC
EWEN
MACC
[old code][new code][new code]
A two-tier protection scheme is implemented to protect
data against inadvertent clearing or writing. To write to
the memory, an EWEN (Program/Erase Enable) must
first be issued. The CAT33C704 will now allow program/
erase operations to be performed only on memory
locations at or above the address set in the memory
pointer. The remaining portion of the memory is still
protected. To override this protection, an OVMPR (Override Memory Pointer Register—see Memory Pointer
Register) must be issued for every program/erase instruction which accesses the protected area:
[old code][new code][new code]
The EWEN instruction enables the device to perform
program/erase operations. The new access code must
be entered twice for verification. If the device already has
an access code, the old access code must be entered
before the new access code can be accepted. The
length of the password is incorporated into the MACC
portion of the instruction.
ENAC
EWEN
OVMPR
WRITE
Once the secure mode is activated, access to memory
locations is under software control. Access (read, write,
and clear instructions) to the memory locations below
the address in the memory pointer is allowed only if the
ENAC (Enable Access) instruction followed by the correct access code has been previously executed.
ENAC
EWEN
WRITE
[old access code]
[access code]
[address][ data]
As an alternative to the OVMPR instruction, the WMPR
(Write Memory Pointer Register) instruction may be
used to move the memory pointer address to uncover
the area where writing is to be performed:
ENAC
EWEN
WMPR
WRITE
[access code]
[address][data]
[access code]
[address]
[address ][data ]
Figure 11. ERAL Timing
CS
DON’T CARE
CLK
tEW
tSV
DI
OP7
DO
OP CODE
OP0 OP7
OP CODE
OP0
READY
HIGH-Z
BUSY
5074 FHD F14
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Preliminary
CAT33C704
with the first bit being the start bit and the following 7 bits
being the op-code. Data can be one or two bytes long
depending on the instruction and the memory array
organization. Each address is one or two bytes long
depending on the organization of the memory array. In
this protocol, the transmission of the MSB is always first
and the LSB last. The CS (Chip Select) pin of the
CAT33C704 may be used to frame the data transmission packet or it may be set HIGH for the entire duration
of operation. If an error in op-code or parity (if enabled)
has been detected, the ERR output will be set LOW and
the CAT33C704 will stop receiving and sending data
until CS is toggled from HIGH to LOW to HIGH again.
Alternatively, an error condition may be detected by
interrogating the device for a status word. If an error
condition has been detected, the DO (Data Output) pin
will not respond. DO may be programmed to become tristated or to output a RDY/BUSY status flag during
program/erase cycles (see ENBSY instruction).
As shipped from the factory, the device is in the unprotected mode. The length of the access code is user
selectable from a minimum of one byte to a maximum of
eight bytes (> 1.84x1019 combinations). Loading a zerolength access code will disable protection.
MEMORY POINTER REGISTER
The memory pointer enables the user to segment the
E2PROM array into two sections. In the unprotected
mode, the array can be segmented between read-only
and full access, while in the secure mode, the memory
may be segmented between read-only access and
password-only access. Three instructions are dedicated
to the memory pointer operations. The first one is WMPR
(Write Memory Pointer Register). This instruction, followed by an address, will load the memory pointer
register with a new address. This address will be stored
in the E2PROM and can be modified only by another
WMPR instruction. The second instruction is OVMPR
(Override Memory Pointer Register) which allows a
single program/erase to be performed to memory locations below the address set in the memory pointer. This
instruction allows the user to modify data in a segmented
array without having to move the memory pointer. Once
the operation is complete, the device returns to the
protected mode. If the device is in the secure mode both
of these instructions require the ENAC instruction and a
valid access code prior to their execution. The third
instruction is the RMPR (Read Memory Pointer Register) which will place the current contents of the register
in the serial output buffer.
STATUS REGISTER
An eight bit status register is provided to allow the user
to determine the status of the CAT33C704. The contents
of the first three bits of the register are 101 which allows
the user to quickly determine the condition of the device.
The next three bits indicate the status of the device; they
are parity error, instruction error and RDY/BUSY status.
The last two bits are reserved for future use.
CLEAR ALL AND WRITE ALL
As a precaution, the ERAL instruction has to be entered
twice before it is executed. This measure is required as
a redundancy check on the incoming instruction for
possible transmission errors. The WRAL instruction
requires sending an ERAL first (this sets a flag only) and
then the WRAL instruction. The CAT33C704 will accept
SECS PROTOCOL
The CAT33C704 implements the SECS communication
protocol which uses an 8-bit transmission format. As
shown in Figures 7–13, all instructions are 8 bits long
Figure 12. WRAL Timing
CS
DON’T CARE
CLK
tEW
tSV
DI
OP7
DO
OP CODE
ERAL
OP0 OP7
OP CODE
WRAL
HIGH-Z
OP0
DATA
READY
BUSY
5074 FHD F15
Doc. No. 25046-00 2/98
10
Preliminary
CAT33C704
the following commands:
ERAL
ERAL
ERAL
WRAL
SYSTEM ERRORS
Whenever an error occurs, be it an instruction error
(unknown instruction), or parity error (perhaps caused
by transmission error), the device will stop its operation.
To return to normal operation, the device must be reset
by pulsing CS LOW and then set back to HIGH. Resetting the device will not affect the ENAC, EWEN and
ENBSY status. The error may be determined by entering
the READ STATUS REGISTER (RSR) instruction
immediatly following the reset. The status output is an 8
bit word with the first three bits being 101. This three bit
pattern indicates that the device is functioning normally.
The fourth bit is “1” if a parity error occurred. The fifth bit
is a “1” if an instruction error occurred. The sixth bit is a
“1” if the device is in a program/erase cycle. The last two
bits are reserved for future use.
An ERAL will be executed
A WRAL will be executed
Both the ERAL and WRAL commands will program/
erase the entire array and will not be blocked by the
memory pointer.
THE PARITY BIT
The SECS protocol supports an even parity bit if the PE
pin of the device is set HIGH, otherwise, there is no
parity. If PE is set LOW and the incoming instruction
contains a parity bit, it may be interpreted as the start bit
of the next instruction. When PE is HIGH, the CAT33C704
expects a parity bit at the end of every incoming instruction packet. For example, the RSEQ instruction will look
like this:
The reason for the “101” pattern is to distinguish between an error conditon (DO tri-stated) and a device
busy status. If an error condition exists, it will not respond
to any input instruction from DI. However, if the device is
in a program/erase cycle, it responds to the RSR instruction by outputting “101 00100”. If RSR is executed at the
end of a program/erase cycle, the output will be “101000
00”.
1100 1011
A15…A8
A7…A0 P
The device then outputs data continuously until it reaches
the end of the memory. The last byte of data contains 9
bits. The ninth bit is the parity bit calculated over the
entire transmitted data packet. The RSEQ instruction
may be terminated at any time by bringing CS low; the
output will then go to high impedance.
1 0 1 X X X X X
PARITY
ERROR
INSTRUCTION RDY/BUSY
ERROR
STATUS
FUTURE USE
5074 FHD F09
Figure 13. Next Instruction Timing(1)
CS
CLK
tEW
NEXT INSTRUCTION
tSV
DI
OP CODE
DO
tHZ
READY
HIGH-Z
HIGH-Z
BUSY
5074 FHD F16
Note:
(1) DO will be high impedance after the last instruction bit has been clocked in, unless the instruction is RSR or RMPR, in which case, DO will
become active.
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Preliminary
CAT33C704
READ Read Memory
INSTRUCTION SET
DISAC Disable Access
1000 1000
In the protected mode, this instruction, followed by a
valid access code, unlocks the device for read/write/
clear access.
WMPR Write Memory Pointer Register
1100 0100
[A7–A0] (x16 organization)
1100 0001
[A15–A8] [A7–A0] [D7–D0] (x8 organization)
1100 0001
[A7–A0] [D15–D8] [D7–D0] (x16 organization)
ERASE Clear Memory
The WMPR instruction followed by 8 or 16 bits of
address (depending on the organization) will move the
pointer to the newly specified address.
MACC Modify Access Code
1101
[A7–A0] (x16 organization)
Write the 8 bit or 16 bit data to the addressed memory
location. After the instruction, address, and data have
been entered, the self-timed program/erase cycle will
start. The addressed memory location will be erased
before data is written. The DO pin may be used to output
the RDY/BUSY status by having previously entered the
ENBSY instruction. During the program/erase cycle, DO
will output a LOW for BUSY during this cycle and a HIGH
for READY after the cycle has been completed.
[Access Code]
[A15–A8] [A7–A0] (x8 organization)
1100 1001
WRITE Write Memory
ENAC Enable Access
1100 0100
[A15–A8] [A7–A0] (x8 organization)
Output the contents of the addressed memory location
to the serial port.
This instruction will lock the memory from all program/
erase operations regardless of the contents of the memory
pointer. A write can be accomplished only by first entering the ENAC instruction followed by a valid access
code.
1100 0101
1100 1001
1100 0000
[A15–A8] [A7–A0] (x8 organization)
1100 0000
[A7–A0] (x16 organization)
Erase data in the specified memory location (set memory
to “1”). After the instruction and the address have been
entered, the self-timed clear cycle will start. The DO pin
may be used to output the RDY/BUSY status by having
previously entered the ENSBY instruction. During the
clear cycle, DO will output a LOW for BUSY during this
cycle and a HIGH for ready after the cycle has been
completed.
[Length] [Old code] [New code]
[New code]
This instruction requires the user to enter the old access
code, if one was set previously, followed by the new
access code and a re-entry of the new access code for
verification. Within the instruction format, the variable
[Length] designates the length of the access code as the
following:
ERAL Clear All
[Length] = [0] No access code. Set device to unprotected mode.
1000 1001
1000 1001
[Length] = [1–8] Length of access code is 1 to 8 bytes.
[Length] = [>8] Illegal number of bytes. The CAT33C704
will ignore the rest of the transmission.
Erase the data of all memory locations (all cells set to
“1”). For protection against inadvertent chip clear, the
ERAL instruction is required to be entered twice.
RMPR Read Memory Pointer Register
WRAL Write All
1100 1010
1000 1001
Output the content of the memory pointer register to the
serial output port.
1100 0011
OVMPR Override Memory Pointer Register
1100 0011
1000 1001
1000 0011
[D7–D0] (x8 organization)
Write one or two bytes of data to all memory locations.
An ERAL will be automatically performed before the
Override the memory protection for the next instruction.
Doc. No. 25046-00 2/98
[D15–D8] [D7–D0] (x16 organization)
12
Preliminary
CAT33C704
entered before any program/erase instruction will be
carried out. Once entered, it will remain valid until powerdown or an EWDS (Program/Erase Disable) is executed.
WRAL is executed. For protection against inadvertent
clearing or writing of data, the ERAL instruction is
required to be entered preceding the WRAL instruction.
RSEQ Read Sequentially
1100 1011
[A15–A8] [A7–A0] (x8 organization)
1100 1011
[A7–A0] (x16 organization)
EWDS Program/Erase Disable
1000 0010
Disable all write and clear functions.
Read memory starting from specified address, sequentially to the highest address or until CS goes LOW. The
instruction is terminated when CS goes LOW.
ORG Select Memory Organization
1000 011R
ENBSY Enable Busy
(where R = 0 or 1)
Set memory organization to 512 x 8 if R = 0.
1000 0100
Set memory organization to 256 x 16 if R = 1.
Enable the status indicator on DO during program/erase
cycle. DO goes LOW then HIGH once the write cycle is
complete. DO will go to HIGH-Z at the end of the next op
code transmission.
RSR Read Status Register
1100 1000
Output the contents of the 8-bit status register. The
contents of the first three bits of the register are 101,
which allows the user to quickly determine whether the
device is listening or is in an error condition. The next
three bits indicate parity error, instruction error and RDY/
BUSY status. The last two bits are reserved for future
use.
DISBSY Disable Busy
1000 0101
Disable the status indicator on DO during program/
erase cycle.
EWEN Program/Erase Enable
NOP No Operation
1000 0001
1000 0000
Enable program/erase to be performed on non-protected portion of memory. This instruction must be
No Operation.
ORDERING INFORMATION
Prefix
Device #
CAT
33C704
Optional
Company ID
Product
Number
Suffix
J
I
-TE13
Temperature Range
Blank = Commercial (0˚C to +70˚C)
I = Industrial (-40˚C to +85˚C)
A = Automotive (-40˚ to +105˚C)*
Tape & Reel
TE13: 2000/Reel
Package
P: PDIP
J: SOIC (JEDEC)
* -40˚C to +125˚C is available upon request
Notes:
(1) The device used in the above example is a 33C704JI-TE13 (SOIC, Industrial Temperature, Tape & Reel)
33C704 F17
13
Doc. No. 25046-00 2/98
Preliminary
CAT33C704
Doc. No. 25046-00 2/98
14