COMCHIP CDBF0230L

COMCHIP
SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBF0230L
(Lead-free Device)
Io = 200 mA
V R = 30 Volt s
Features
Low forward Voltage
Designed for mounting on small surface.
1005(2512)
Extremely thin/leadless package.
0.102(2.60)
0.095(2.40)
Majority carrier conduction.
0.051(1.30)
0.043(1.10)
Mechanical data
Case:
SOD-323F (2512) Standard
package , molded plastic.
0.035(0.90)
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
0.027(0.70)
0.020(0.50) Typ.
Polarity: Indicated by cathode band.
0.012 (0.30) Typ.
Mounting position: Any.
0.020(0.50) Typ.
Weight: 0.006 gram (approximately).
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Repetitive peak reverse voltage
Symbol Min Typ Max Unit
V RRM
35
V
Reverse voltage
VR
30
V
Average forward rectified current
Io
200
mA
I FSM
1
A
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
Storage temperature
T STG
-40
+125
C
Junction temperature
Tj
-40
+125
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Conditions
Parameter
Symbol Min Typ Max Unit
Forward voltage
I F = 200 mA
VF
0.5
V
Reverse current
V R = 10 V
IR
30
uA
REV:A
QW-A1026
Page 1
COMCHIP
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0230L)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1000
1m
Reverse current ( A )
C
100
C
o
C
25
o
o
25
75
10
C
5
o
12
Forward current (mA )
75 C
1
100u
25 C
10u
1u
25 C
100n
10n
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
5
0
Forward voltage (V)
15
20
25
30
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig. 4 - Current derating curve
100
Average forward current ( % )
Capacitance between terminals (pF)
10
10
1
0
5
10
15
20
25
Reverse voltage (V)
30
100
80
60
40
20
0
0
25
50
75
100
125
Ambient temperature ( C )
REV:A
QW-A1026
Page 2