CET CED50N06 N-channel enhancement mode field effect transistor Datasheet

CED50N06/CEU50N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
60
Units
V
VGS
±20
V
ID
36
A
IDM
105
A
68
W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Operating and Store Temperature Range
S
PD
0.45
W/ C
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
2.2
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
Rev 1. 2006.Oct
http://www.cetsemi.com
Details are subject to change without notice .
6 - 66
CED50N06/CEU50N06
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 60V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
4
V
23
mΩ
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 15A
18
gFS
VDS = 10V, ID = 15A
15
S
1278
pF
430
pF
80
pF
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
2
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 30V, ID = 36A,
VGS = 10V, RGEN = 3.6Ω
21
45
ns
13
33
ns
40
80
ns
Turn-Off Fall Time
tf
9
27
ns
Total Gate Charge
Qg
31
40
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 48V, ID = 36A,
VGS = 10V
8
nC
13
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 15A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6 - 67
35
A
1.5
V
6
CED50N06/CEU50N06
120
125
25 C
VGS=8V
100
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10V
80
VGS=7V
60
VGS=6V
40
VGS=5V
20
100
75
50
25
0
0
0
1
2
3
4
5
6
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
8
10
Figure 2. Transfer Characteristics
1200
900
600
Coss
300
Crss
0
0
5
10
15
20
25
2.6
2.2
ID=15A
VGS=10V
1.8
1.4
1.0
0.6
0.2
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
6
Figure 1. Output Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
4
VGS, Gate-to-Source Voltage (V)
1500
1.2
2
VDS, Drain-to-Source Voltage (V)
1800
1.3
-55 C
TJ=125 C
VGS=4V
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
6 - 68
15 V =48V
DS
ID=36A
12
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED50N06/CEU50N06
9
6
3
0
0
10
20
30
40
10
3
10
2
10
1
10
0
10
-1
RDS(ON)Limit
100ms
1ms
10ms
DC
6
TC=25 C
TJ=175 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
VOUT
td(off)
tf
90%
90%
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
PDM
0.1
-1
t1
0.05
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-2
10
-5
t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
6 - 69
10
0
10
1
2
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