CED75A3/CEU75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 25 Units V VGS ±20 V ID 60 A IDM 200 A 56 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.37 W/ C TJ,Tstg -55 to 175 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 2.7 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.January http://www.cetsemi.com CED75A3/CEU75A3 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 25 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 25V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA V 3 V VGS = 10V, ID = 30A 1 7 9 mΩ VGS = 4.5V, ID = 30A 10 13 mΩ Dynamic Characteristics c Forwand Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 15A VDS = 15V, VGS = 0V, f = 1.0 MHz 12 S 1180 pF 270 pF 145 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 12 25 ns 4 10 ns ns 32 65 Turn-Off Fall Time tf 6 15 ns Total Gate Charge Qg 10 13 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 20A, VGS = 5V 3.6 nC 2.9 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 20A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testin 2 0.85 50 A 1.2 V 6 CED75A3/CEU75A3 100 100 80 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,4V 60 VGS=3V 40 20 80 60 40 25 C 20 TJ=125 C 0 0 1 2 3 4 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 4 5 Figure 2. Transfer Characteristics 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=30A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 3 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VGS, Gate-to-Source Voltage (V) 1500 1.2 1 VDS, Drain-to-Source Voltage (V) 1800 1.3 -55 C 0 VGS=0V 10 10 10 -25 0 25 50 75 100 125 2 1 0 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=15V ID=20A 6 4 2 0 0 3 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED75A3/CEU75A3 4 8 12 16 10 100µs 1ms DC 10 10 20 10µs 2 1 6 TC=25 C TJ=175 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 PDM -1 0.05 t1 0.02 t2 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2