CET CED85A3 N-channel enhancement mode field effect transistor Datasheet

CED85A3/CEU85A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 80A, RDS(ON) = 6mΩ @VGS = 10V.
RDS(ON) = 9mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
25
Units
V
VGS
±20
V
ID
80
A
IDM
320
A
70
W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
S
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
0.56
W/ C
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
1.8
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
Rev 1.
2005.September
http://www.cetsemi.com
1
CED85A3/CEU85A3
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
25
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 25V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = VDS, ID = 250µA
3
V
VGS = 10V, ID = 30A
5.0
6.0
mΩ
VGS = 4.5V, ID = 30A
7.5
9.0
mΩ
VDS = 15V, VGS = 0V,
f = 1.0 MHz
1
2325
pF
330
pF
175
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
15
30
ns
4
10
ns
ns
45
90
Turn-Off Fall Time
tf
8
20
ns
Total Gate Charge
Qg
17
22
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15V, ID = 16A,
VGS = 5V
6
nC
5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 20A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testin
2
0.82
50
A
1.2
V
6
CED85A3/CEU85A3
100
100
80
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,6,4V
60
VGS=3V
40
20
80
60
40
25 C
20
TJ=125 C
0
0
1
2
3
4
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
1500
1000
Coss
500
Crss
0
5
10
15
20
25
5
2.2
1.9
ID=30A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
4
Figure 2. Transfer Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
3
Figure 1. Output Characteristics
2000
1.2
2
VGS, Gate-to-Source Voltage (V)
2500
1.3
1
VDS, Drain-to-Source Voltage (V)
3000
0
-55 C
0
VGS=0V
10
10
10
-25
0
25
50
75
100
125
2
1
0
0.4
150
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=15V
ID=16A
6
4
2
0
0
3
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED85A3/CEU85A3
6
12
18
24
10
1ms
10ms
10
10
30
100µs
2
DC
1
6
TC=25 C
TJ=150 C
Single Pulse
0
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
t2
0.02
0.01
Single Pulse
10
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
2
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