CEDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: H APPLICATIONS: • Load/Power Switches • DC/DC Converters • Battery Powered Portable Equipment FEATURES: • 100mW Power Dissipation • 0.4mm Low Package Profile • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, TLP™ 1x0.6mm, SOT-883L Leadless Surface Mount Package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Peak Drain Current (tp=10μs) Power Dissipation Operating and Storage Junction Temperature SYMBOL VDS VGS ID IDM PD TJ, Tstg SOT-883L CASE ELECTRICAL SYMBOL IGSSF IGSSR IDSS BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) gfs Crss Ciss Coss ton toff CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VGS=10V, VDS=0 VGS=10V, VDS=0 VDS=20V, VGS=0 VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA VGS=1.5V, ID=1.0mA VDS =10V, ID=100mA VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA VDD=3.0V, VGS=2.5V, ID=10mA 20 10 100 200 100 -65 to +150 otherwise noted) MIN TYP 20 0.6 MAX 1.0 1.0 1.0 0.9 3.0 4.0 15 100 4.0 9.0 9.5 50 75 UNITS V V mA mA mW °C UNITS μA μA μA V V Ω Ω Ω mS pF pF pF ns ns R6 (5-August 2010) CEDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-883L CASE - MECHANICAL OUTLINE LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN MARKING CODE: H R6 (5-August 2010) w w w. c e n t r a l s e m i . c o m